K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM
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BR-05-ALL-002
K8D3216UBC-pi07
K5E5658HCM
KAD070J00M
KBH10PD00M
K5D1257ACM-D090000
samsung ddr2 ram MTBF
KBB05A500A
K801716UBC
k5d1g13acm
k5a3281ctm
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RISC-Processor s3c2410
Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Contextual Info: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH
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BR-04-ALL-005
BR-04-ALL-004
RISC-Processor s3c2410
MR16R1624DF0-CM8
arm9 samsung s3c2440 architecture
chip 3351 dvd
sp0411n
K9W8G08U1M
sandisk micro SD Card 2GB
arm9 s3c2440
K9F1G08U0A
K6X8008C2B
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K4S281632K
Abstract: k4s281632k-uc K4S280832K k4s281632 K4S281632K-U
Contextual Info: K4S280832K K4S281632K Synchronous DRAM 128Mb K-die SDRAM Specification 54 TSOP-II with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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K4S280832K
K4S281632K
128Mb
A10/AP
K4S281632K
k4s281632k-uc
K4S280832K
k4s281632
K4S281632K-U
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K4S281632I
Abstract: K4S280832I k4s281632 8Mb x 16 K4S280432i
Contextual Info: K4S280432I K4S280832I K4S281632I Synchronous DRAM 128Mb I-die SDRAM Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4S280432I
K4S280832I
K4S281632I
128Mb
A10/AP
K4S281632I
K4S280832I
k4s281632
8Mb x 16
K4S280432i
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K4S281632I-UC75
Abstract: K4S281632I-UC60 K4S281632I-UI75 K4S281632I 8MB SDRAM K4S281632I-UL75 8Mb samsung SDRAM K4S281632IUC60 K4S281632IUC75 K4S280832I
Contextual Info: K4S280432I K4S280832I K4S281632I Synchronous DRAM 128Mb I-die SDRAM Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4S280432I
K4S280832I
K4S281632I
128Mb
215KB
K4S281632I-TC75
K4S281632I-UC60
K4S281632I-UC75
K4S281632I-UI75
K4S281632I-UL75
K4S281632I
8MB SDRAM
8Mb samsung SDRAM
K4S281632IUC60
K4S281632IUC75
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48lc4m16a2
Abstract: 48LC8M16A2 48LC4M32B2 48lc4m16a2-75 48LC8M16A2-75 AU1100 48lc4m16a2 data sheet 48lc4m16 Micron 48LC8M16A2-7E amd alchemy au1100
Contextual Info: AMD Alchemy Solutions Au1000™, Au1100™ and Au1500™ Processors SDRAM Performance Application Note Revision: 1.3 Issue Date: April 2003 Revision History Revision No. Issue Date 1.2 October 2002 1.3 April 2003 Description of Changes • Earlier version
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Au1000TM,
Au1100TM
Au1500TM
0x560009EF
0x00000023
48lc4m16a2
48LC8M16A2
48LC4M32B2
48lc4m16a2-75
48LC8M16A2-75
AU1100
48lc4m16a2 data sheet
48lc4m16
Micron 48LC8M16A2-7E
amd alchemy au1100
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K4S281632K-UC
Abstract: K4S281632K K4S280832K K4S281632KUC K4S280432K K4S280432K-U K4S28163
Contextual Info: K4S280432K K4S280832K K4S281632K Synchronous DRAM 128Mb K-die SDRAM Specification 54 TSOP-II with Pb-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4S280432K
K4S280832K
K4S281632K
128Mb
A10/AP
K4S281632K-UC
K4S281632K
K4S280832K
K4S281632KUC
K4S280432K
K4S280432K-U
K4S28163
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PDF
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K4S281632K
Abstract: K4S280432K-U K4S280832K K4S280432K
Contextual Info: K4S280432K K4S280832K K4S281632K Synchronous DRAM 128Mb K-die SDRAM Specification 54 TSOP-II with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4S280432K
K4S280832K
K4S281632K
128Mb
A10/AP
K4S281632K
K4S280432K-U
K4S280832K
K4S280432K
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PDF
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nds 3 video guard smart card
Abstract: RF cable M to M QAM16 DCATV2200 2300RC RC2300 NDS specification DVB smart card rs232
Contextual Info: Digital Cable Set-Top-Box DCATV 2200 RC / 2300 RC SDC 2000 The excellent quality of the eSTB line of set-top-boxes is fully guaranteed by Samsung MPEG 2 / DVB Compliant Software download via Cable Advanced Electronic Program Guide EPG Easy installation Multi-language support
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RS-232C
DCATV2200
SDC2000
15Mbps
nds 3 video guard smart card
RF cable M to M
QAM16
2300RC
RC2300
NDS specification
DVB smart card rs232
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PDF
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K4S280832
Abstract: K4S281632K-U
Contextual Info: K4S280432K K4S280832K K4S281632K Synchronous DRAM 128Mb K-die SDRAM Specification 54 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4S280432K
K4S280832K
K4S281632K
128Mb
A10/AP
K4S280832
K4S281632K-U
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PDF
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K4S281632O
Abstract: K4S281632O-LL K4S280832O sdram voltage 8Mb samsung SDRAM
Contextual Info: Rev. 1.0, May. 2010 K4S280832O K4S281632O 128Mb O-die SDRAM 54TSOP II with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4S280832O
K4S281632O
54TSOP
128Mb
A10/AP
K4S281632O
K4S281632O-LL
sdram voltage
8Mb samsung SDRAM
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PDF
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K4S280832K
Abstract: K4S281632K K4S280432K K4S280832KUC k4s280832k-uc K4S281632k-uc
Contextual Info: K4S280432K K4S280832K K4S281632K Synchronous DRAM 128Mb K-die SDRAM Specification 54 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4S280432K
K4S280832K
K4S281632K
128Mb
A10/AP
K4S280832K
K4S281632K
K4S280432K
K4S280832KUC
k4s280832k-uc
K4S281632k-uc
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PDF
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nds 3 video guard smart card
Abstract: nagravision DVB smart card rs232 samsung TV TUNER pin telco 64 pin connector samsung tuner DVB smart card PAL video RF MODULATION CARD IEEE 1284 CONNECTOR ISO-7816 NDS
Contextual Info: digital digital Digital Cable Set-Top-Box DCA TV Series 2100TELCO/2100RC/2200RC MPEG-2, DVB Compliant Software Download via Cable Advanced Electronic Program Guide EPG Easy Installation Multi-language support 256 Color On Screen Display Option: Open TV EN2, Telco Return Modem,
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2100TELCO/2100RC/2200RC
2100Telco)
240VAC
Tr4719-040
nds 3 video guard smart card
nagravision
DVB smart card rs232
samsung TV TUNER pin
telco 64 pin connector
samsung tuner
DVB smart card
PAL video RF MODULATION CARD
IEEE 1284 CONNECTOR
ISO-7816 NDS
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K9F2G08U0B
Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
Contextual Info: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM
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BR-09-ALL-001
K9F2G08U0B
K9HCG08U1M-PCB0
K9NCG08U5M-PCB0
K9F1G08U0C
K9F4G08U0B-PCB0
K9F2G08U0B-PCB0
K9F4G08U0B
K9WBG08U1M
K9F1G08U0C-PCB0
K9G4G08U0B
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K4S641632K
Abstract: K4S640832K K4S641632
Contextual Info: K4S640832K K4S641632K Synchronous DRAM 64Mb K-die SDRAM Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K4S640832K
K4S641632K
A10/AP
K4S641632K
K4S640832K
K4S641632
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PDF
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k4s641632n
Contextual Info: K4S640832N K4S641632N Synchronous DRAM 64Mb N-die SDRAM Specification 54 TSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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K4S640832N
K4S641632N
A10/AP
k4s641632n
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PDF
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k4s641632n
Abstract: K4S641632N-LC K4S640832N
Contextual Info: K4S640832N K4S641632N Synchronous DRAM 64Mb N-die SDRAM Specification 54 TSOP-II with Pb-Free and Halogen Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4S640832N
K4S641632N
A10/AP
k4s641632n
K4S641632N-LC
K4S640832N
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PDF
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k4s641632n-lc
Abstract: K4S641632N K4S640832N
Contextual Info: K4S640832N K4S641632N Synchronous DRAM 64Mb N-die SDRAM Specification 54 TSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4S640832N
K4S641632N
A10/AP
k4s641632n-lc
K4S641632N
K4S640832N
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PDF
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KMM466S104CT-F0
Abstract: KM416S1020CT-F10
Contextual Info: KMM466S104CT 144pin SDRAM SODIMM Revision History Revision .2 Mar. 1998 •Some Parameters values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1uA.
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KMM466S104CT
144pin
200mV.
2K/32ms
4K/64ms.
KMM466S104CT
1Mx64
1Mx16,
KMM466S104CT-F0
KM416S1020CT-F10
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TAA 611 T12
Abstract: 17x18 BA0-C11 DQ51d DQ34-C12
Contextual Info: 2.5V SEQUENTIAL FLOW-CONTROL DEVICE 36 BIT WIDE CONFIGURATION For use with 128Mb to 256Mb DDR SDRAM • IDT Standard mode or FWFT mode of operation • Empty and full flags for monitoring memory status • Programmable Almost-Empty and Almost-Full flags, each flag
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128Mb
256Mb
IDT72T6360
BB324)
72T6360
TAA 611 T12
17x18
BA0-C11
DQ51d
DQ34-C12
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PDF
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Samsung EOL
Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
Contextual Info: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM
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288-576Mb
10-20ns
18-72Mb
64Kb-16Mb
8Mb-64Mb
16Mb-512Mb
16Mb-1Gb
256Mb-2Gb
200Mhz
-40oC
Samsung EOL
IS42S81600F
is42s16320
IS43DR16320
IS42S32200L
IS49NLC36800
IS43R32400E
IS46R
Mobile SDRAM
IS42S32200E
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PDF
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TAA 611 T12
Abstract: 72T6480 BA1-B11 d25n3 BA0-C11 k4h561638f A11-C10 q35t Q35T1 A7D9
Contextual Info: 2.5V SEQUENTIAL FLOW-CONTROL DEVICE 48 BIT WIDE CONFIGURATION For use with 128Mb to 256Mb DDR SDRAM • IDT Standard mode or FWFT mode of operation • Empty and full flags for monitoring memory status • Programmable Almost-Empty and Almost-Full flags, each flag
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128Mb
256Mb
drw44
BB324)
72T6480
drw45
TAA 611 T12
72T6480
BA1-B11
d25n3
BA0-C11
k4h561638f
A11-C10
q35t
Q35T1
A7D9
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SGRAM
Abstract: Samsung 8MB SGRAM voodoo voodoo3 Etron
Contextual Info: Confidential Memory Application Team Tel: 82-331-209-5371 Fax: 82-2-760-7990 GRAPHIC MEMORY APPLICATION NOTE How to use Single CS 32M SGRAM in Dual CS system like Voodoo3 Product Planning & Application Engineering WJ-APR-99 The Leader in Memory Technology
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WJ-APR-99
16Mbit
32Mbit
16Mbit)
200MHz
64bit
128bit
100-QFP
SGRAM
Samsung 8MB SGRAM
voodoo
voodoo3
Etron
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PDF
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SGRAM
Abstract: voodoo samsung ap e-tron
Contextual Info: Memory Application Team Tel: 82-331-209-5371 Fax: 82-2-760-7990 GRAPHIC MEMORY APPLICATION NOTE How to use Single CS 32M SGRAM in Dual CS system like Voodoo3 Product Planning & Application Engineering WJ-APR-99 The Leader in Memory Technology ELECTRONICS
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WJ-APR-99
16Mbit
32Mbit
16Mbit)
200MHz
64bit
128bit
100-QFP
SGRAM
voodoo
samsung ap
e-tron
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PDF
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