8MX16 EDO Search Results

EM-10B

Contextual Info: FMD4A16LCx–30Ex 128M 8Mx16 Low Power DDR SDRAM Revision 0.2 Jan. 2009 Rev. 0.2, Jan. ‘09 1 FMD4A16LCx–30Ex Document Title 128M(8Mx16) Low Power DDR SDRAM Revision History Revision No. History Draft date Remark Jul. 2nd , 2008 Preliminary 0.0 Initial Draft

Contextual Info: FMD4A16LCx–30A C x 128M(8Mx16) Low Power DDR SDRAM Revision 0.2 Jan. 2009 Rev. 0.2, Jan. ‘09 1 FMD4A16LCx–30A(C)x Document Title 128M(8Mx16) Low Power DDR SDRAM Revision History Revision No. History Draft date Remark Jul. 07th, 2008 Preliminary 0.0 Initial Draft

A25LQ064

Abstract: A25L040A A25L080A A25L032 A25LQ016 A25L040 A43L4616A A25E016 PSRAM 256 FLash 2011 a29160
Contextual Info: Product Selector Memory IC's and More www.amictechnology.com Multi Chip Package MCP Density Configuration Mb Part Number Vcc V Notes Availability 128+32 (16Mx8 / 8Mx16) + 32M A82DL12832T(U)G 1.8 Flash + PSRAM Q2/2011 64+32 (8Mx8 / 4Mx16) + 32M A82DL64032T(U)G

Contextual Info: 16Mx64 bits PC100 SDRAM SO DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh GMM26417227ANTG Description Features The GMM26417227ANTG is a 16M x 64 bits Synchronous Dynamic RAM SO-DIMM which is assembled 8 pieces of 8M x 16bits Synchronous DRAMs in 54 pin TSOP II

Contextual Info: Mobile SDRAM VDD 2.5V, V DDQ 1.8V & 2.5V K4S28163LD-RG(S) CMOS SDRAM 8Mx16 Mobile SDRAM (PASR & TCSR, -25°C ~ 85°C Operation) Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 Mobile SDRAM (VDD 2.5V, V DDQ 1.8V & 2.5V) K4S28163LD-RG(S) CMOS SDRAM Revision History

mobile dram

Contextual Info: Mobile SDRAM VDD 2.5V, V DDQ 1.8V & 2.5V K4S28163LD-RF(R) CMOS SDRAM 8Mx16 Mobile SDRAM (PASR & TCSR, -25°C ~ 70°C Operation) Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 Mobile SDRAM (VDD 2.5V, V DDQ 1.8V & 2.5V) K4S28163LD-RF(R) CMOS SDRAM Revision History

edo ram 8Mx16

Contextual Info: 8Mx16, 50 - 70ns, TSTACK 30A165-12 A 128 Megabit CMOS DRAM DPnnD8MX16RY5 PRELIMINARY DESCRIPTION: The DPnnD8MX16RY5 is the 8 Meg x 16 Dynamic RAM module that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of two 4 Meg x 16

Contextual Info: 8M x 64 Bit SDRAM SODIMM PC100/133 SYNCHRONOUS SMALL OUTLINE DRAM DIMM 6480YsSWM4G05TWE 144 Pin 8Mx64 SDRAM SODIMM Unbuffered, 4k Refresh, 3.3V with SPD General Description Pin Assignment The module is a 8Mx64 bit, 5 chip, 144 Pin SODIMM module consisting of 4 8Mx16 (TSOP)

DS-850

Contextual Info: 8M x 64 Bit SDRAM SODIMM PC100/133 SYNCHRONOUS SMALL OUTLINE DRAM DIMM 6480YsSWM4G05TWK 144 Pin 8Mx64 SDRAM SODIMM Unbuffered, 4k Refresh, 3.3V with SPD General Description Pin Assignment The module is a 8Mx64 bit, 5 chip, 144 Pin SODIMM module consisting of 4 8Mx16 (TSOP)

ci 3860, 8 pin

Contextual Info: 16Mx64 bits PC100 SDRAM SO DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh GMM26417227ANTG Description Features The GMM26417227ANTG is a 16M x 64 bits Synchronous Dynamic RAM SO-DIMM which is assembled 8 pieces of 8M x 16bits Synchronous DRAMs in 54 pin TSOP II

Contextual Info: 16Mx64 bits PC100 SDRAM SO DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh GMM26417228ANTG Description Features The GMM26417228ANTG is a 16M x 64 bits Synchronous Dynamic RAM SO-DIMM which is assembled 8 pieces of 8M x 16bits Synchronous DRAMs in 54 pin TSOP II

Contextual Info: 16Mx64 bits PC100 SDRAM SO DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh GMM26417228ANTG Description Features The GMM26417228ANTG is a 16M x 64 bits Synchronous Dynamic RAM SO-DIMM which is assembled 8 pieces of 8M x 16bits Synchronous DRAMs in 54 pin TSOP II

sdram cmos

Contextual Info: CMOS SDRAM K4S28163LD-RF/R 8Mx16 Mobile SDRAM 54CSP VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 K4S28163LD-RF/R CMOS SDRAM Revision History Revision 0.0 (December 8. 2000, Preliminary) • First generation of 128Mb Low Power SDRAM (V DD 2.5V, VDDQ 1.8V).

Contextual Info: CMOS SDRAM K4S28163LD-RL/N/P 8Mx16 SDRAM 54CSP VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 K4S28163LD-RL/N/P CMOS SDRAM Revision History Revision 0.0 (June 4. 2001, Target) • First generation of 128Mb Low Power SDRAM not having Mobile feature.

Contextual Info: CMOS SDRAM K4S281633D-RL/N/P 8Mx16 SDRAM 54CSP VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 K4S281633D-RL/N/P CMOS SDRAM Revision History Revision 0.0 (February 21. 2001, Target) • First generation of 128Mb Low Power SDRAM without special function (VDD 3.0V, VDDQ 3.0V)

Contextual Info: V DD 2.5V, V DDQ 1.8V & 2.5V K4S28163LD-RL N CMOS SDRAM 8Mx16 SDRAM 54CSP Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 V DD 2.5V, V DDQ 1.8V & 2.5V K4S28163LD-RL(N) CMOS SDRAM Revision History Revision 0.0 (June 4. 2001, Target) • First generation of 128Mb Low Power SDRAM not having Mobile feature.

Contextual Info: K4S281633D-RL N CMOS SDRAM 8Mx16 SDRAM 54CSP (V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V) Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 K4S281633D-RL(N) CMOS SDRAM Revision History Revision 0.0 (February 21. 2001, Target) • First generation of 128Mb Low Power SDRAM without special function (V DD 3.0V, V DDQ 3.0V)

Contextual Info: W PD8M16V-XB2C W hite El e c t r o n ic D esigns C o r p o r a t i o n 8Mx16 Dynamic RAM MODULE 3.3V Supply advanced * FEATURES • Fast A c c ess T im e (tRAC) = 50, 60ns ■ 4 K or 8K R e fresh Cycles ■ P o w e r Sup p ly: 3 .3 V + 0.3V ■ ■ Packaging:

Contextual Info: WPD8M16V-XB2C W h it e E l e c t r o n ic D e sig n s C o r p o r a t io n 8Mx16 Dynamic RAM MODULE 3.3V Supply advan ced * FEATURES Fast A c c ess T im e (tRAC) = 50, 60ns • 4 K or 8K R e fresh Cycles ■ P o w e r Sup p ly: 3 .3 V ± 0 .3 V ■ ■ Packaging:

um61256

Abstract: hynix hy57v281620 hy57v641620 cross reference WINBOND Serial flash cross reference UM611024 256k x8 SRAM 28F160S3 Samsung EOL "DDR1 SDRAM" 1MX8/512KX16
Contextual Info: Cross Reference Your Memory Provider Part number µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B AM29F010

is25c64B

Abstract: IC61C1024 IS25C128A IS42VM16800E IS42SM16800 IS24C16A Smart is62c1024al tsop2-54 4kx8 sram IS42S32800D
Contextual Info: To our valued customers, Often times electronic systems are placed in harsh environments that test the limits of device quality and reliability. These harsh environments exist in many Industrial, Automotive, Networking, and Mobile Communication applications. Many of these applications are

Automotive Product Selector Guide

Abstract: products automotive IS61WV51216 IS61WV512 DDR RAM 512M is66wve2m16 IS61LPS2048 IS61WV25632 BGA165 VFBGA package tray
Contextual Info: Automotive Market Support Introduction ISSI has been supporting the Automotive Market since 1999. In 2001, ISSI began to broaden its support of the market by introducing the Automotive Business Unit. The purpose of this business unit is to provide cross-functional unit support within ISSI to continually enhance the Automotive Infrastructure from

um61256

Abstract: um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245
Contextual Info: Cross Reference Your Memory Provider part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D

is62c51216al

Abstract: IS43LR16320B IS66WVE4M16BLL is66wve2m16 IS43DR16640A BGA60 IS66WVE4M16ALL TSOP2-44 IS42SM16400G is45vs16160d
Contextual Info: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive electronics (ii) networking/telecommunications infrastructure, (iii) industrial/military/medical electronics (iv) mobile communications and digital