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    Samsung Semiconductor K4S561632H-UC60

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    Bristol Electronics K4S561632H-UC60 3,099
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    Samsung Semiconductor K4S561632E-UC60

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    Bristol Electronics K4S561632E-UC60 460 1
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    Samsung Semiconductor K4S561632J-UC60

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    Samsung Semiconductor K4S561632J-UC75

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    Bristol Electronics K4S561632J-UC75 86
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    Samsung Semiconductor K4S561632A-TL1L

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    Quest Components K4S561632A-TL1L 29
    • 1 $109.55
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    • 100 $87.64
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    K4S561632 Datasheets (50)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4S561632A Samsung Electronics 256Mbit SDRAM 4M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S561632A-TC/L1H Samsung Electronics 4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. Original PDF
    K4S561632A-TC/L1L Samsung Electronics 4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. Original PDF
    K4S561632A-TC/L75 Samsung Electronics 4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. Original PDF
    K4S561632A-TC/L80 Samsung Electronics 4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 125 MHz (CL=3), interface LVTTL. Original PDF
    K4S561632B Samsung Electronics 256Mbit SDRAM 4M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S561632B-TC/L Samsung Electronics 4MB x 16-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF
    K4S561632B-TC-L Samsung Electronics 4MB x 16-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF
    K4S561632B-TC/L1H Samsung Electronics 4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. Original PDF
    K4S561632B-TC/L1L Samsung Electronics 4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. Original PDF
    K4S561632B-TC/L75 Samsung Electronics 4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. Original PDF
    K4S561632B-TC/L, TI/P Samsung Electronics 4MB x 16-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF
    K4S561632B-TI-P Samsung Electronics 4MB x 16-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF
    K4S561632C Samsung Electronics K4S561632C 4M x 16-Bit x 4 Banks Synchronous DRAM, Organization = 16Mx16, Bank/ Interface = 4B/LVTTL, Refresh = 8K/64ms, Speed = 60,7C,75,1H,1L, Package = 54TSOP2, Power = B,i,p,e,n, Production Status = Mass Production, Comments = ICC6=800uA Original PDF
    K4S561632C-L60 Samsung Electronics 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM Original PDF
    K4S561632C-L7C Samsung Electronics 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM Original PDF
    K4S561632C-TC Samsung Electronics 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM Original PDF
    K4S561632C-TC75 Samsung Electronics IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC Original PDF
    K4S561632D Samsung Electronics 4M x 16-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF
    K4S561632D Samsung Electronics 256Mbit SDRAM 4M x 16-Bit x 4 Banks Original PDF

    K4S561632 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K4S561632C-TC/L75

    Abstract: K4S561632C K4S561632C-TC K4S561632C-TC/L7C
    Text: K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.4 Sept. 2001 K4S561632C CMOS SDRAM Revision History


    Original     		PDF K4S561632C 256Mbit 16bit A10/AP K4S561632C-TC/L75 K4S561632C K4S561632C-TC K4S561632C-TC/L7C

    K4S561632C

    Abstract: No abstract text available
    Text: K4S561632C CMOS SDRAM 256Mbit SDRAM Extended Temp Support 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept.2001 K4S561632C CMOS SDRAM


    Original     		PDF K4S561632C 256Mbit 16bit 100MHz A10/AP K4S561632C

    samsung capacitance year code

    Abstract: No abstract text available
    Text: Industrial Synchronous DRAM K4S561632J 256Mb J-die SDRAM Specification 54 TSOP-II with Pb-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF K4S561632J 256Mb A10/AP samsung capacitance year code

    K4S561632N

    Abstract: K4S561632N-LC K4S560832N-LC K4S560832N K4S560432N-LC K4S560432N K4S560832Nlc K4S5604
    Text: Rev. 1.0, Apr. 2010 K4S560432N K4S560832N K4S561632N 256Mb N-die SDRAM 54TSOP II with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4S560432N K4S560832N K4S561632N 54TSOP 256Mb A10/AP K4S561632N K4S561632N-LC K4S560832N-LC K4S560432N-LC K4S560832Nlc K4S5604

    K4S561632C-TC75

    Abstract: K4S561632C-TC1L
    Text: K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Mar. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 Mar. 2001 K4S561632C CMOS SDRAM Revision History Revision 0.1 Feb. 15, 2001


    Original     		PDF K4S561632C 256Mbit 16bit A10/AP K4S561632C-TC75 K4S561632C-TC1L

    K4S561632C-TC

    Abstract: K4S561632CTC k4s561632c
    Text: K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 Jun 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 Jun 2001 K4S561632C CMOS SDRAM Revision History Revision 0.1 Feb. 15, 2001


    Original     		PDF K4S561632C 256Mbit 16bit A10/AP K4S561632C-TC K4S561632CTC k4s561632c

    K4S561632C

    Abstract: K4S561632C-TB75 k4s561632c-tb7c 2CLK
    Text: K4S561632C CMOS SDRAM 256Mbit SDRAM Super low power 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.5 Nov. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.5 Nov. 2001 K4S561632C CMOS SDRAM Revision History


    Original     		PDF K4S561632C 256Mbit 16bit 100MHz A10/AP K4S561632C K4S561632C-TB75 k4s561632c-tb7c 2CLK

    K4S561632J-UC

    Abstract: K4S561632J K4S561632J-UL K4S561632J-U K4S561632JUC K4S560832J K4S560832J-UC k4s560832j-u
    Text: K4S560432J K4S560832J K4S561632J Synchronous DRAM 256Mb J-die SDRAM Specification 54 TSOP-II with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4S560432J K4S560832J K4S561632J 256Mb A10/AP K4S561632J-UC K4S561632J K4S561632J-UL K4S561632J-U K4S561632JUC K4S560832J K4S560832J-UC k4s560832j-u

    K4S561632J

    Abstract: K4S56163 K4S561632J-UI/P60 K4S561632J-UI samsung cmos dram 4m x 4 k4s5616
    Text: Industrial Synchronous DRAM K4S561632J 256Mb J-die SDRAM Specification 54 TSOP-II with Pb-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF K4S561632J 256Mb A10/AP K4S561632J K4S56163 K4S561632J-UI/P60 K4S561632J-UI samsung cmos dram 4m x 4 k4s5616

    K4S561632J

    Abstract: k4s560832J K4S561632J-UC K4S560432J k4s561632j-uc/l75 K4S561632J-UL K4S561632 K4S560832J-UC
    Text: K4S560432J K4S560832J K4S561632J Synchronous DRAM 256Mb J-die SDRAM Specification 54 TSOP-II with Pb-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4S560432J K4S560832J K4S561632J 256Mb A10/AP K4S561632J k4s560832J K4S561632J-UC K4S560432J k4s561632j-uc/l75 K4S561632J-UL K4S561632 K4S560832J-UC

    K4S561632B

    Abstract: No abstract text available
    Text: Preliminary K4S561632B-TI P CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 January 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Jan. 2001 Preliminary K4S561632B-TI(P)


    Original     		PDF K4S561632B-TI 256Mbit 16bit 256Mb K4S561632B

    K4S561632H

    Abstract: K4S561632H-T samsung capacitance year code
    Text: Industrial Synchronous DRAM K4S561632H 256Mb H-die SDRAM Specification Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4S561632H 256Mb A10/AP K4S561632H K4S561632H-T samsung capacitance year code

    K4S561632D

    Abstract: No abstract text available
    Text: K4S561632D CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Aug. 2002 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Aug. 2002 K4S561632D CMOS SDRAM Revision History Revision 0.0 Jan., 2002


    Original     		PDF K4S561632D 256Mbit 16bit K4S561632D A10/AP

    K4S561632C

    Abstract: k4s561632
    Text: K4S561632C CMOS SDRAM 256Mbit SDRAM Industrial Temp Support 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S561632C CMOS SDRAM


    Original     		PDF K4S561632C 256Mbit 16bit 100MHz A10/AP K4S561632C k4s561632

    K4S561632J

    Abstract: K4S561632J-U samsung capacitance year code
    Text: Industrial Synchronous DRAM K4S561632J 256Mb J-die SDRAM Specification 54 TSOP-II with Lead-Free & Halogen-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF K4S561632J 256Mb A10/AP K4S561632J K4S561632J-U samsung capacitance year code

    K4S561632A

    Abstract: No abstract text available
    Text: K4S561632A CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Sep. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Sep. 1999 K4S561632A CMOS SDRAM 4M x 16Bit x 4 Banks Synchronous DRAM


    Original     		PDF K4S561632A 256Mbit 16bit K4S561632A A10/AP

    Untitled

    Abstract: No abstract text available
    Text: K4S560432J K4S560832J K4S561632J Synchronous DRAM 256Mb J-die SDRAM Specification 54 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4S560432J K4S560832J K4S561632J 256Mb A10/AP

    K4S561632N

    Abstract: samsung k4s561632n
    Text: Rev. 1.0, May. 2010 K4S561632N 256Mb N-die SDRAM Industrial 54TSOP II with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4S561632N 256Mb 54TSOP A10/AP K4S561632N samsung k4s561632n

    K4S561632B

    Abstract: No abstract text available
    Text: K4S561632B CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 May. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 May.2000 K4S561632B CMOS SDRAM Revision 0.1 March 10, 2000


    Original     		PDF K4S561632B 256Mbit 16bit 133MHz" A10/AP K4S561632B

    Untitled

    Abstract: No abstract text available
    Text: K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 Oct. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 Oct. 2001 K4S561632C CMOS SDRAM Revision History Revision 0.0 Mar. 06, 2001


    Original     		PDF K4S561632C 256Mbit 16bit 100MHz A10/AP

    K4S561632D

    Abstract: No abstract text available
    Text: K4S561632D CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 May. 2002 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Aug. 2002 K4S561632D CMOS SDRAM Revision History Revision 0.0 May., 2002


    Original     		PDF K4S561632D 256Mbit 16bit K4S561632D A10/AP

    k4s561632d-tl

    Abstract: K4S561632D
    Text: K4S561632D CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Jan. 2002 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Jan. 2002 K4S561632D CMOS SDRAM Revision History Revision 0.0 Jan., 2002


    Original     		PDF K4S561632D 256Mbit 16bit K4S561632D A10/AP k4s561632d-tl

    Untitled

    Abstract: No abstract text available
    Text: K4S561632D CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 May. 2002 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 May. 2002 K4S561632D CMOS SDRAM Revision History Revision 0.0 May., 2002


    Original     		PDF K4S561632D 256Mbit 16bit A10/AP

    samsung date code

    Abstract: 16MX64 sdram samsung
    Text: SERIAL PRESENCE DETECT PC100 SODIMM PC100 SODIMM 144pin SPD Specification (256Mb B-die base) Rev. 0.1 Apr. 2000 Rev 0.1 Apr. 2000 SERIAL PRESENCE DETECT PC100 SODIMM M464S1654BT1-L1H/L1L, C1H/C1L • Organization : 8MX64 • Composition : 16MX16 *4 • Used component part # : K4S561632B-TL1H/TL1L,TC1H/TC1L


    Original     		PDF PC100 144pin) 256Mb M464S1654BT1-L1H/L1L, 8MX64 16MX16 K4S561632B-TL1H/TL1L 4K/64ms samsung date code 16MX64 sdram samsung