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    K4S561632 Price and Stock

    Samsung Semiconductor K4S561632H-UL75

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    Bristol Electronics K4S561632H-UL75 1,178
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    Samsung Semiconductor K4S561632E-UC60

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    Bristol Electronics K4S561632E-UC60 460 1
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    Samsung Semiconductor K4S561632J-UC60

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    Bristol Electronics K4S561632J-UC60 284
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    Samsung Semiconductor K4S561632J-UL75000

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    Samsung Semiconductor K4S561632J-UC75

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    Vyrian K4S561632J-UC75 266
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    K4S561632 Datasheets (50)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    K4S561632A
    		Samsung Electronics 256Mbit SDRAM 4M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF 127.65KB 10
    K4S561632A-TC/L1H
    		Samsung Electronics 4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. Original PDF 127.65KB 10
    K4S561632A-TC/L1L
    		Samsung Electronics 4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. Original PDF 127.65KB 10
    K4S561632A-TC/L75
    		Samsung Electronics 4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. Original PDF 127.65KB 10
    K4S561632A-TC/L80
    		Samsung Electronics 4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 125 MHz (CL=3), interface LVTTL. Original PDF 127.65KB 10
    K4S561632B
    		Samsung Electronics 256Mbit SDRAM 4M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF 132KB 11
    K4S561632B-TC/L
    		Samsung Electronics 4MB x 16-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF 131.99KB 11
    K4S561632B-TC-L
    		Samsung Electronics 4MB x 16-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF 131.99KB 11
    K4S561632B-TC/L1H
    		Samsung Electronics 4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. Original PDF 131.99KB 11
    K4S561632B-TC/L1L
    		Samsung Electronics 4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. Original PDF 131.99KB 11
    K4S561632B-TC/L75
    		Samsung Electronics 4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. Original PDF 131.99KB 11
    K4S561632B-TC/L, TI/P
    		Samsung Electronics 4MB x 16-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF 131.99KB 11
    K4S561632B-TI-P
    		Samsung Electronics 4MB x 16-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF 131.99KB 11
    K4S561632C
    		Samsung Electronics K4S561632C 4M x 16-Bit x 4 Banks Synchronous DRAM, Organization = 16Mx16, Bank/ Interface = 4B/LVTTL, Refresh = 8K/64ms, Speed = 60,7C,75,1H,1L, Package = 54TSOP2, Power = B,i,p,e,n, Production Status = Mass Production, Comments = ICC6=800uA Original PDF 113.64KB 11
    K4S561632C-L60
    		Samsung Electronics 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM Original PDF 114.36KB 11
    K4S561632C-L7C
    		Samsung Electronics 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM Original PDF 114.36KB 11
    K4S561632C-TC
    		Samsung Electronics 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM Original PDF 114.36KB 11
    K4S561632C-TC75
    		Samsung Electronics IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC Original PDF 114.38KB 11
    K4S561632D
    		Samsung Electronics 4M x 16-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF 113.17KB 11
    K4S561632D
    		Samsung Electronics 256Mbit SDRAM 4M x 16-Bit x 4 Banks Original PDF 60.93KB 11

    K4S561632 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K4S561632C-TC/L75

    Abstract: K4S561632C K4S561632C-TC K4S561632C-TC/L7C
    Contextual Info: K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.4 Sept. 2001 K4S561632C CMOS SDRAM Revision History


    Original     		K4S561632C 256Mbit 16bit A10/AP K4S561632C-TC/L75 K4S561632C K4S561632C-TC K4S561632C-TC/L7C PDF

    K4S561632C

    Contextual Info: K4S561632C CMOS SDRAM 256Mbit SDRAM Extended Temp Support 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept.2001 K4S561632C CMOS SDRAM


    Original     		K4S561632C 256Mbit 16bit 100MHz A10/AP K4S561632C PDF

    samsung capacitance year code

    Contextual Info: Industrial Synchronous DRAM K4S561632J 256Mb J-die SDRAM Specification 54 TSOP-II with Pb-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		K4S561632J 256Mb A10/AP samsung capacitance year code PDF

    K4S561632N

    Abstract: K4S561632N-LC K4S560832N-LC K4S560832N K4S560432N-LC K4S560432N K4S560832Nlc K4S5604
    Contextual Info: Rev. 1.0, Apr. 2010 K4S560432N K4S560832N K4S561632N 256Mb N-die SDRAM 54TSOP II with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		K4S560432N K4S560832N K4S561632N 54TSOP 256Mb A10/AP K4S561632N K4S561632N-LC K4S560832N-LC K4S560432N-LC K4S560832Nlc K4S5604 PDF

    K4S561632C-TC75

    Abstract: K4S561632C-TC1L
    Contextual Info: K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Mar. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 Mar. 2001 K4S561632C CMOS SDRAM Revision History Revision 0.1 Feb. 15, 2001


    Original     		K4S561632C 256Mbit 16bit A10/AP K4S561632C-TC75 K4S561632C-TC1L PDF

    K4S561632C-TC

    Abstract: K4S561632CTC k4s561632c
    Contextual Info: K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 Jun 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 Jun 2001 K4S561632C CMOS SDRAM Revision History Revision 0.1 Feb. 15, 2001


    Original     		K4S561632C 256Mbit 16bit A10/AP K4S561632C-TC K4S561632CTC k4s561632c PDF

    K4S561632C

    Abstract: K4S561632C-TB75 k4s561632c-tb7c 2CLK
    Contextual Info: K4S561632C CMOS SDRAM 256Mbit SDRAM Super low power 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.5 Nov. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.5 Nov. 2001 K4S561632C CMOS SDRAM Revision History


    Original     		K4S561632C 256Mbit 16bit 100MHz A10/AP K4S561632C K4S561632C-TB75 k4s561632c-tb7c 2CLK PDF

    K4S561632J-UC

    Abstract: K4S561632J K4S561632J-UL K4S561632J-U K4S561632JUC K4S560832J K4S560832J-UC k4s560832j-u
    Contextual Info: K4S560432J K4S560832J K4S561632J Synchronous DRAM 256Mb J-die SDRAM Specification 54 TSOP-II with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4S560432J K4S560832J K4S561632J 256Mb A10/AP K4S561632J-UC K4S561632J K4S561632J-UL K4S561632J-U K4S561632JUC K4S560832J K4S560832J-UC k4s560832j-u PDF

    K4S561632J

    Abstract: K4S56163 K4S561632J-UI/P60 K4S561632J-UI samsung cmos dram 4m x 4 k4s5616
    Contextual Info: Industrial Synchronous DRAM K4S561632J 256Mb J-die SDRAM Specification 54 TSOP-II with Pb-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		K4S561632J 256Mb A10/AP K4S561632J K4S56163 K4S561632J-UI/P60 K4S561632J-UI samsung cmos dram 4m x 4 k4s5616 PDF

    K4S561632J

    Abstract: k4s560832J K4S561632J-UC K4S560432J k4s561632j-uc/l75 K4S561632J-UL K4S561632 K4S560832J-UC
    Contextual Info: K4S560432J K4S560832J K4S561632J Synchronous DRAM 256Mb J-die SDRAM Specification 54 TSOP-II with Pb-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4S560432J K4S560832J K4S561632J 256Mb A10/AP K4S561632J k4s560832J K4S561632J-UC K4S560432J k4s561632j-uc/l75 K4S561632J-UL K4S561632 K4S560832J-UC PDF

    K4S561632B

    Contextual Info: Preliminary K4S561632B-TI P CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 January 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Jan. 2001 Preliminary K4S561632B-TI(P)


    Original     		K4S561632B-TI 256Mbit 16bit 256Mb K4S561632B PDF

    K4S561632H

    Abstract: K4S561632H-T samsung capacitance year code
    Contextual Info: Industrial Synchronous DRAM K4S561632H 256Mb H-die SDRAM Specification Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4S561632H 256Mb A10/AP K4S561632H K4S561632H-T samsung capacitance year code PDF

    K4S561632D

    Contextual Info: K4S561632D CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Aug. 2002 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Aug. 2002 K4S561632D CMOS SDRAM Revision History Revision 0.0 Jan., 2002


    Original     		K4S561632D 256Mbit 16bit K4S561632D A10/AP PDF

    K4S561632C

    Abstract: k4s561632
    Contextual Info: K4S561632C CMOS SDRAM 256Mbit SDRAM Industrial Temp Support 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S561632C CMOS SDRAM


    Original     		K4S561632C 256Mbit 16bit 100MHz A10/AP K4S561632C k4s561632 PDF

    K4S561632J

    Abstract: K4S561632J-U samsung capacitance year code
    Contextual Info: Industrial Synchronous DRAM K4S561632J 256Mb J-die SDRAM Specification 54 TSOP-II with Lead-Free & Halogen-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		K4S561632J 256Mb A10/AP K4S561632J K4S561632J-U samsung capacitance year code PDF

    K4S561632A

    Contextual Info: K4S561632A CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Sep. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Sep. 1999 K4S561632A CMOS SDRAM 4M x 16Bit x 4 Banks Synchronous DRAM


    Original     		K4S561632A 256Mbit 16bit K4S561632A A10/AP PDF

    Contextual Info: K4S560432J K4S560832J K4S561632J Synchronous DRAM 256Mb J-die SDRAM Specification 54 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4S560432J K4S560832J K4S561632J 256Mb A10/AP PDF

    K4S561632N

    Abstract: samsung k4s561632n
    Contextual Info: Rev. 1.0, May. 2010 K4S561632N 256Mb N-die SDRAM Industrial 54TSOP II with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		K4S561632N 256Mb 54TSOP A10/AP K4S561632N samsung k4s561632n PDF

    K4S561632B

    Contextual Info: K4S561632B CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 May. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 May.2000 K4S561632B CMOS SDRAM Revision 0.1 March 10, 2000


    Original     		K4S561632B 256Mbit 16bit 133MHz" A10/AP K4S561632B PDF

    Contextual Info: K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 Oct. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 Oct. 2001 K4S561632C CMOS SDRAM Revision History Revision 0.0 Mar. 06, 2001


    Original     		K4S561632C 256Mbit 16bit 100MHz A10/AP PDF

    K4S561632D

    Contextual Info: K4S561632D CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 May. 2002 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Aug. 2002 K4S561632D CMOS SDRAM Revision History Revision 0.0 May., 2002


    Original     		K4S561632D 256Mbit 16bit K4S561632D A10/AP PDF

    k4s561632d-tl

    Abstract: K4S561632D
    Contextual Info: K4S561632D CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Jan. 2002 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Jan. 2002 K4S561632D CMOS SDRAM Revision History Revision 0.0 Jan., 2002


    Original     		K4S561632D 256Mbit 16bit K4S561632D A10/AP k4s561632d-tl PDF

    Contextual Info: K4S561632D CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 May. 2002 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 May. 2002 K4S561632D CMOS SDRAM Revision History Revision 0.0 May., 2002


    Original     		K4S561632D 256Mbit 16bit A10/AP PDF

    samsung date code

    Abstract: 16MX64 sdram samsung
    Contextual Info: SERIAL PRESENCE DETECT PC100 SODIMM PC100 SODIMM 144pin SPD Specification (256Mb B-die base) Rev. 0.1 Apr. 2000 Rev 0.1 Apr. 2000 SERIAL PRESENCE DETECT PC100 SODIMM M464S1654BT1-L1H/L1L, C1H/C1L • Organization : 8MX64 • Composition : 16MX16 *4 • Used component part # : K4S561632B-TL1H/TL1L,TC1H/TC1L


    Original     		PC100 144pin) 256Mb M464S1654BT1-L1H/L1L, 8MX64 16MX16 K4S561632B-TL1H/TL1L 4K/64ms samsung date code 16MX64 sdram samsung PDF