9 BIT SIMM PINS Search Results

KMM49256

Contextual Info: MEMORY MODULES KMM49256/KMM59256 2 5 6 K x 9 Bit DRAM SIP and SIMM Memory Modules FEATURES GENERAL DESCRIPTION • 262,144 x 9-bit Organization _ • Ninth device has separate 0 , Q and CAS for Parity applications. • Performance range: The S am sung KMM49256 and KMM59256 is 256K x 9

MCM94256AS10

Abstract: MA2180
Contextual Info: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA MCM94256A 256K x 9 Bit Dynamic Random Access Memory Module The MCM94256AS is a 2.25M bit, dynamic random access memory DRAM module organized as 262,144 x 9 bits. The module is a 30-lead single-in-line memory module (SIMM) consisting of two MCM514256A

EADS-80

Contextual Info: TM4100EAD9 4194304 BY 9-BIT DYNAMIC RAM MODULE SMMS419C - NOVEMBER 1991 - REVISED JUNE 1995 Organization . . . 4194304 x 9 SINGLE IN-LINE MODULE Single 5-V Power Supply ±10% Tolerance (TOP VIEW) 30-Pin Single In-Line Memory Module (SIMM) for Use With Sockets

41C1000

Abstract: KMM591000AN 41C1000BJ
Contextual Info: MM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KMM591 OOOAN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and

KM41C1000AJ

Abstract: KM41C1000 KMM591000
Contextual Info: MEMORY MODULES KMM491000A/KMM591000A 1 M x 9 DRAM SIP and SIMM Memory Modules FEATURES GENERAL DESCRIPTION _ • 1,048,576 x 9-bit Organization • Ninth device has separate D, Q and CAS or Parity applications. • Performance range: The Samsung KMM491000A and KMM591000A are

KMM5916000

Contextual Info: KMM5916000/T DRAM MODULES 16 M x 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5916000/T is a 16M bit x 9 Dynamic RAM high density memory module. The Samsung KMM5916000/T consist of nine KM41C16000rr DRAMs

Contextual Info: KMM59256BN DRAM MODULES 2 5 6 K X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 59256BN is a 2 6 2 ,1 4 4 bit X 9 Dynamic RAM high density memory module. The Sam­ sung KM M 59256BN consist of two 1M bit DRAMs

KMM59256-12

Abstract: KMM59256 KMM49256 M492
Contextual Info: SAMSUNG SEMICONDUCTOR INC ?= ib m 4a o o o a a is t 53E D • MEMORY MODULES KMM49256/KMM59256 2 5 6 K x 9 Bit DRAM SIP and SIMM Memory Modules FEATURES GENERAL DESCRIPTION • 262,144 x 9-bit Organization • N inth device has separate D, Q and CAS or Parity

YL-69

Contextual Info: NEC Electronics Inc. MC-421000A9 1,048,576 X 9-Bit Dynamic CMOS RAM Module Description Pin Configurations The M C-421000A9 is a fas t-p a g e 1,048,576-word by 9-bit dynam ic RAM m odule designed to o perate from a single + 5-volt pow er supply. 30-Pin Leaded SIMM MC-421000A9A/AA/AB

Contextual Info: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA MCM94256 256K x 9 Bit Dynamic Random Access Memory Module The M CM94256S is a 2.25M bit, dynamic random access memory DRAM module organized as 262,144 x 9 bits. The module is a 30-lead single-in-line memory m odule (SIMM) consisting of two MCM514256A DRAMs housed in

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • TRhMlMS DOlMMhT T6b mSt\GK KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung

Contextual Info: KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and

TCA 290

Abstract: 41C1000 km44c1000aj 591000AN
Contextual Info: KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M M 591 000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung K M M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and

41C1000

Abstract: KMM591000AN8 max5516 KMM591000AN10 KMM591000AN-8 KMM591000AN-7 41C1000BJ
Contextual Info: KMM591000AN DRAM MODULES 1 MX 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package and

TM497EU9

Abstract: TMS417400DJ simm 30-pin 9-bit 30 pin 9-bit simm memory 30-pin simm memory 30-pin SIMM 30-pin 9-bit ram module SIMM 30-pin
Contextual Info: TM497EU9 4194304-WORD BY 9-BIT DYNAMIC RAM MODULE f ♦ s S M M S 49 9- FEBRUARY 1994 Organization . . . 41943 04 x 9 U SINGLE-IN-LINE PACKAGE TOP VIEW Single 5-V Power Supply (±10% Tolerance) 30-Pin Single-In-Line Memory Module (SIMM) for Use W ith Sockets

KM41C1000

Abstract: KMM591000
Contextual Info: SAMSUNG K M M 4 9 1 0 0 0 /K M M 5 9 1 0 0 0 □ - • - 1M x 9 DRAM SIP and SIMM Memory Modules GENERAL DESCRIPTION FEATURES The Samsung KMM491000 and KMM591000 are 1M x 9 dynamic RAM high density memory mod­ ules. The ninth bit is generally used for parity and

TM497EU9

Contextual Info: TM497EU9 4194304-WORD BY 9-BIT DYNAMIC RAM MODULE SM M S499A- FEBRUARY 1994 - REVISED JUNE 1998 Organization . . . 4194304 x 9 Single 5-V Power Supply ±10% Tolerance 30-Pln Slngle-ln-Llne Memory Module (SIMM) for Use With Sockets Utilizes One 4-Megablt and Two 16-Megabit

cm944

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4M x 9 Bit Dynamic RAM Module MCM94430 The MCM94430 is a 36M dynamic random access memory DRAM module organized as 4,194,304 x 9 bits. The module is a 30-lead single-in-line memory module (SIMM) consisting of two MCM517400B and one MCM54100A DRAMs

Contextual Info: 30-PIN SIMMS STI91000 1M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI91000 is a 1M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI91000 consist of nine CMOS 1M x 1 DRAMs in 20-pin SOJ package

KMM59256BN

Abstract: KMM59256BN7 59256BN KMMS9256BN-8
Contextual Info: KMM59256BN DRAM MODULES 2 5 6 K X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M M 5 9 2 5 6 B N is a 2 6 2 ,1 4 4 bit X 9 Dynamic RAM high density m em ory module. The Sam­ sung K M M 5 9 2 5 6 B N co n sist o f tw o 1M bit DRAMs

u860

Abstract: TM497GU8
Contextual Info: TM497GU8 4194304-WORD BY 8-BIT DYNAMIC RAM MODULE SMMS49BA-APRIL 1 9 9 4 - REVISED JUNE 199S • Organization . . . 4194304 x 8 I U SINGLE-IN-LINE PACKAGE • Single 5-V Power Supply ±10% Tolerance • 30-Pln Slngle-ln-Llne Memory Module (SIMM) for Use With Sockets

KM41C1000

Abstract: 30-pin simm memory KMM591000 30-pin simm memory dynamic IRP 745 km41c SIMM 30-pin KMM491000-10 KMM591000-10 KMM491000-12
Contextual Info: S AM SUN G K M M 4 9 1 0 0 0 /K M M 5 9 1 0 0 0 □ " W Semiconductor 1M x 9 DRAM SIP and SIMM Memory Modules GENERAL DESCRIPTION FEATURES The Samsung KMM491000 and KMM591000 are 1M x 9 dynamic RAM high density memory mod­ ules. The ninth bit is generally used for parity and

KMM591000B7

Abstract: KMM591000B-7 KMM591000B6 KMM591000B
Contextual Info: KMM591000B DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M M 5 9 1 0 0 0 B is a 1 M bit X 9 Dynamic RAM high density m em ory module. The Samsung K M M 5 9 10OOB consist o t nine K M 4 1C 10OOBJ DRAMs

30-pin SIMM RAM

Contextual Info: STI94000 30-PIN SIMMS 4M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI94000 is a 4M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI94000 consist of nine CMOS 4 M x 1 DRAMs in 20-pin SOJ package