9 LEAD TO66 Search Results

RC4194TK

Contextual Info: Section 9 RC4194 RC4194 Dual Tracking Voltage Regulators Connection Information 9-Lead TO-66 Package Top View Features • Simultaneously adjustable outputs with one resistor to ±42V ■ Load current — ±200 mA with 0.04% load regulation ■ Internal thermal shutdown at Tj = +175°C

TRANSFORMER 220v to 9V

Abstract: 220v 2a diode bridge NTE384 220v 20v 4a
Contextual Info: NTE384 Silicon NPN Transistor High Voltage Power Amp/Switch Description: The NTE384 is a multiple epitaxial silicon NPN power transistor in a TO66 type package utilizing a multiple–emitter site structure. Multiple–epitaxial construction maximizes the volt–ampere characteristic of the device and provides fast switching speeds. Multiple–emitter design ensures uniform current flow throughout the structure, which produces a high IS/b and a large safe–operation–area.

667 transistor ecb

Abstract: EVL32-060 A50L-0001-0109
Contextual Info: Mechanical Drawings All Dimensions in inches mm . AX-5W Case 106 .037(0.94) .043(1.09) .048(1.22) •053(1.35) 1.0(25.4) 1.0(25.4) MI NI MUM MI NI MUM 330(8.38) .340(8.64) .360(9.14) 350(8.89)! T T 130(3.30) _ 145(3.68) 340(8.64) . 3 60 ( 9. 1 4) r*1.0(25.4)

PBL 3708

Abstract: MSFM1-P3 MO-098 MO-144 MS-033 TO-276 MIL-STD-1835D MO-070 CMGA2-P100G GDFP1-G16
Contextual Info: INCH - POUND MIL-STD-1835D 1 June 2004 SUPERSEDING MIL-STD-1835C 15 August 2000 DEPARTMENT OF DEFENSE INTERFACE STANDARD ELECTRONIC COMPONENT CASE OUTLINES AMSC N/A FSC 5962 MIL-STD-1835D FOREWORD 1. This standard is approved for use by all Departments and Agencies of the Department of Defense DoD .

UC1842A

Abstract: UC3842ADMT UC384XA SG384X 236 8-pin ic
Contextual Info: LIN Doc # ; 1 8 4 0 U C 1 8 4 xA /28 4x A /384x M I C R O E L E C T R O N I C S T he I n f i n i t e P o w e r I o f C n n o v a t i o n urrent P M PWM ode D r o d u c t i o n DESCRIPTION PRODUCT C o m p a r is o n of U C 384 xA • . S G 384 x D is c h a r g e

universal MOTOR speed control using scr

Abstract: r02AM DC motor speed control circuit with SCR
Contextual Info: 7294621 PQWEREX INC 74 DlF| 72T4b21 DDDlVfllT2~|~ T ~ z , ? - t J T Reverse Blocking Triode Thyristor SCR 12 A RMS i r10C 1- Up to 600 Volts The Cl 26 is a molded silicon plastic SCR which incorporates General Elec­ tric’s new POWER-GLAS glassivation process. This process provides for an

2N6301

Contextual Info: 2N6300 and 2N6301 NPN Darlington Power Silicon Transistor Available Qualified per MIL-PRF-19500/539 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is rated at 8 amps and is military qualified up to a JANTXV level. This TO-213AA isolated package features a 180 degree lead orientation.

Contextual Info: 2N6298 and 2N6299 PNP Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/540 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed PNP transistor is rated at 8 amps and is military qualified up to a JANTXV

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN POWER SILICON TRANSISTOR

2N5662

Abstract: 2N5660 2N5661 2N5663 300Vdc 000-inch 2N5660U3 2N5663 equivalent
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN POWER SILICON TRANSISTOR

rcd 125

Contextual Info: LIN Doc I l M l W / J I 5V M I C R O E L E C T R O N I C S T h e I n f i n i t e P o w e r o f U ndervoltage PRODUCTI ON I n n o v a t i o n S ensing DATA D E S C R IP TIO N The MC33164 and the MC34164 are m icropow er undervoltage sensin g circuits ideal for u se in low -pow er

Contextual Info: Precautions to be taken when using f f iU S K 'ö C '> ± S c v v x -; {u - , ;t I- m ï à „ 'ï , i I, •!.<f r h > >i ^1-"','nin,'fi; >i - k m c l The greatest care must be taken from structural and detail designs viewpoints in dealing with plastic mold type semicondu­

Contextual Info: HIGH-POWER GaAIAs IRLED ILLUMINATOR OD-663 FEATURES • Super high power output • 880nm peak emission • Three chips connected in series • TO-66 header for good heat dissipation • 100% tested for power output • Electrically isolated case All surfaces are gold plated. Dimensions are nominal

P903

Abstract: 4X103 P2051 p819 B1920-01
Contextual Info: HAMAMATSU CORP 1=1E D • 422^ 30^ 0 G 0 2 7 2 2 2 PbSe Photoconductive Ceils Characteristics Type No. Out­ line No. P.24 25 Package Window Material Effective Sensitive Area ' Size Effective Sensitive Area Measure­ ment Temp. (mm (mm2) IR Cutoff Wave­

2N3741 equivalent

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PNP POWER SILICON TRANSISTOR

2N3740 equivalent

Abstract: 2N3740 2N3741
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PNP POWER SILICON TRANSISTOR

TO111 package

Abstract: TO61 package TO63 package MOSFET F24 S06 rectifier
Contextual Info: PACKAGE OUTLINE DRAWINGS TO-18 PACKAGE TO-5 PACKAGE —seâtaao h i m TO-33 PACKAGE 0Ct9 t?s 1 tf— II i-t 4'fiC> ?y H TO-72 PACKAGE TO-3 PACKAGE MODIFIED TO-3 PACKAGE 60mil pins SE* Ft t -L SEATU 'i "01I6 02' °’6 .225 205 JO -66 PACKAGE F-24 PACKAGE

2N5660U3

Abstract: 2N5660 2N5661 2N5662 2N5663
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 May 2007. MIL-PRF-19500/454G 13 February 2007 SUPERSEDING MIL-PRF-19500/454F 20 May 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER

Contextual Info: Hometaxial-Base n-p-n Type Selection Charts *FE V C E O sus V C E V (sus) V v •c A V V CE V Temp.—°C V 25 IC A •B A JEDEC TO-39/TO-205M or TO-5/TO-205MA Package T 40 40 40 40 55 55 55 65 140 E CB V £2/40349 FAMILY (n-p-n) Medium Power f = 1.4 MHz typ; P j = 5 W max (2N1482); P j = 8.75 W max (40349)

P819

Abstract: P1026 p2532-01 P397 12x101 P394A
Contextual Info: HAMAMATSU CORP 11E D m 4 2 2 TbCH 0002720 =1 Ml PbS Photoconductive Cells Characteristics Type No. Out­ line No. /P.28 \ I 29/ Package Window Material Effective Sensitive Area Size Effective Sensitive Area Measure­ ment Temp. mm (mm2) IR Cutoff Wave­

BF357

Abstract: BF195 BF594 BF197 BF194 BF194 equivalent BF597 2N4996 BF195 equivalent BC516 equivalent
Contextual Info: Silect High Frequency Transistors TT MHz Sj o < Maximum Ratings Device Type hFE Case outline B V PTOT Ic VCE in brackets CBO ic V V mA mW min. max. mA V 1 10 BF594 (9) 30 20 30 250 65 220 Case Outlines BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38

C-48U

Abstract: 2N2666 JANTXV 2N5664 equivalent 2N5667S 2N5665
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 April 1998 INCH-POUND MIL-PRF-19500/455C 25 January 1998 SUPERSEDING MIL-S-19500/455B 19 January 1988 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING

triac T2300D

Abstract: rca T2300D RCA T2700D RCA H 432 T2300B rca t2327d T2506D tsm 1002 T2301D
Contextual Info: Silicon Triac Type Selection Charts Current RCA Types •T RMS A •TSM 50/60/400 Hz A Temp. Voltage T c °c V DROM V STANDARD TYPES T2303F 2N5754 2N5755 2 . 5 2N5756 2IM5757 l + 100 21/25/- 70 200 25 25 40 40 400 600 100 70 200 3 3 3 3 100 70 200 4 4 4

carrier chiller

Abstract: BRIDGE RECTIFIER SMD oscilloscopes manual SOT-353 Mark va ECL Handbook smd diode Cathode is indicated by a blue band mar TO-204aa MICROSEMI PACKAGE OUTLINE Microsemi Catalog 2000 RCA 559 TO3 MECL System Design Handbook
Contextual Info: CASERM/D Rev. 0, Sep-2000 Semiconductor Packaging and Case Outlines ON Semiconductor Reference Manual and Design Guide Semiconductor Packaging and Case Outlines Reference Manual and Design Guide CASERM/D Rev. 0, Sep–2000  SCILLC, 2000 “All Rights Reserved’’