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    25N120

    Abstract: 25N120A IC IGBT 25N120 .25n120 25N120 ixys .25N12 MOS-Gated Transistors N120 92783D N120A
    Text: Low VCE sat High speed IGBT IXGH 25 N120 IXGH 25 N120A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 50 A I C90 TC = 90°C


    Original     		PDF N120A O-247 25N120 25N120A 25N120 25N120A IC IGBT 25N120 .25n120 25N120 ixys .25N12 MOS-Gated Transistors N120 92783D N120A

    200n60

    Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
    Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40


    Original     		PDF PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120

    c2555

    Abstract: IC IGBT 25N120 25N120
    Text: OIXYS IGBT L o w CES IXGH 25N120 IXGH 25N120A v CE s„ , High speed Symbol Test Conditions V CES T j = 2 5 °C to 1 5 0 °C 1200 V V CGR T ,J = 25° C to 150° C; RrF = 1 MQ Gt 1200 V V GES Continuous +20 V V GEM Transient +30 V ^C25 Tc = 2 5 °C 50 A T c = 9 0 °C


    OCR Scan     		PDF 25N120 25N120A 25N120A c2555 IC IGBT 25N120