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    AM81214060 Search Results

    AM81214060 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AM81214-060 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF
    AM81214-060 STMicroelectronics RF & Microwave Transistor L-Band Radar Applications Original PDF
    AM81214-060 STMicroelectronics L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS Original PDF
    AM81214-060 STMicroelectronics RF & Microwave Components Data Book 1993 Scan PDF

    AM81214060 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tp2304

    Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
    Text: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12


    Original     		PDF AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 tp2304 TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit

    AM1214-100

    Abstract: AM1214-175 AM1214-200 AM1214-300 AM1214-325 AM80814-005 AM80814-025 AM81214-006 AM81214-015 AM81214-030
    Text: SILICON POWER TRANSISTORS L-BAND RADAR TRANSISTORS Short, medium and long pulse radar applications are served by the SGS-THOMSON product line of L-Band pulse devices. Featuring refractory-gold metallization for long-term reliability and system availability, these devices are housed


    Original     		PDF AM80814-005 AM81214-030 AM81214-060 AM1214-100 AM1214-175 AM1214-200 AM1214-325 AM81416-020 AM1416-220 AM1214-100 AM1214-175 AM1214-200 AM1214-300 AM1214-325 AM80814-005 AM80814-025 AM81214-006 AM81214-015 AM81214-030

    AM81214-060

    Abstract: S042
    Text: AM81214-060 . . . . RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR ∞:1 LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 55 W MIN. WITH 6.6 dB GAIN


    Original     		PDF AM81214-060 AM81214-060 S042

    MRF648

    Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
    Text: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC


    Original     		PDF 2N5944 2N5945 2N5946 2N6082 2N6084 2N6439 2SC1257 2SC1258 2SC1259 2SC1605A MRF648 TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent

    "Phase Discriminator"

    Abstract: Hewlett-Packard transistor microwave AM81214-060 AM82731-050 AN569 transistor study rf power transistor
    Text: AN569 APPLICATION NOTE PHASE MEASUREMENT AND CHARACTERIZATION OF RF MICROWAVE POWER TRANSISTORS M. Deiss - R. Marley 1. ABSTRACT The continuing efforts to design and produce phased array radar systems have resulted in an increased need for relative insertion phase length data on individual microwave power transistors. The inclusion of


    Original     		PDF AN569 "Phase Discriminator" Hewlett-Packard transistor microwave AM81214-060 AM82731-050 AN569 transistor study rf power transistor

    SO42

    Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier
    Text: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002


    Original     		PDF PowerSO-10RF PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002 PD57006 PD57018 SO42 STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier

    AM81214-060

    Abstract: transistor a 726
    Text: AM81214-060 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AM81214-060 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network


    Original     		PDF AM81214-060 AM81214-060 transistor a 726

    "Phase Discriminator"

    Abstract: AM81214-060 AM82731-050 AN569 MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor study
    Text: AN569 APPLICATION NOTE PHASE MEASUREMENT AND CHARACTERIZATION OF RF MICROWAVE POWER TRANSISTORS M. Deiss - R. Marley 1. ABSTRACT The continuing efforts to design and produce phased array radar systems have resulted in an increased need for relative insertion phase length data on individual microwave power transistors. The inclusion of


    Original     		PDF AN569 "Phase Discriminator" AM81214-060 AM82731-050 AN569 MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor study

    AN569

    Abstract: coupler s-band high power N6226982-L-0384 all transistor datasheet Hewlett-Packard transistor microwave all transistor AM81214-060 AM82731-050 MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor study
    Text: AN569 APPLICATION NOTE PHASE MEASUREMENT AND CHARACTERIZATION OF RF MICROWAVE POWER TRANSISTORS M. Deiss - R. Marley 1. ABSTRACT The continuing efforts to design and produce phased array radar systems have resulted in an increased need for relative insertion phase length data on individual microwave power transistors. The inclusion of


    Original     		PDF AN569 AN569 coupler s-band high power N6226982-L-0384 all transistor datasheet Hewlett-Packard transistor microwave all transistor AM81214-060 AM82731-050 MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor study

    transistor 5cw

    Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
    Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000


    Original     		PDF CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10

    AM81214-060

    Abstract: S042
    Text: AM81214-060 . . . . RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR ∞:1 LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 55 W MIN. WITH 6.6 dB GAIN


    Original     		PDF AM81214-060 AM81214-060 S042

    SD1446

    Abstract: SD2910 philips blx15 BLV36 BLW60C st cross reference blw97 SD4575 BLV103 MX0912B350Y
    Text: June 1999 ST CROSS REFERENCE WITH PHILIPS INDUSTRY PART NUMBER BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 BLF348 BLF368 BLF378 BLF548 BLU10/12 BLU20/12 BLU30/12 BLU30/28 BLU45/12 BLU60/12 BLU60/28 BLU97 BLU99 BLV12 BLV13 BLV30 BLV31


    Original     		PDF BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 SD1446 SD2910 philips blx15 BLV36 BLW60C st cross reference blw97 SD4575 BLV103 MX0912B350Y

    AM81214-060

    Abstract: S042
    Text: AM81214-060 . . . . RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR ∞:1 LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 55 W MIN. WITH 6.6 dB GAIN


    Original     		PDF AM81214-060 AM81214-060 S042

    SO42

    Abstract: sd1393 Transistor amplifier SD1393 SD1470 sd1393 01 sd2931 fm SD57045 LT5232 sd1446 SD4100
    Text: Selection Guide April 2000 VHF/UHF and 900 MHz Cellular Applications TYPE FREQ. MHz POUT (W) Gain min. (dB) Vcc (V) Class (%) Efficiency (°C/W) RTHj-c PD54003 PD54008 PD55003* PD55008 PD55015 PD57002* PD57006* PD57018 PD57030S PD57045S 520 520 520 520 520


    Original     		PDF PD54003 PD54008 PD55003* PD55008 PD55015 PD57002* PD57006* PD57018 PD57030S PD57045S SO42 sd1393 Transistor amplifier SD1393 SD1470 sd1393 01 sd2931 fm SD57045 LT5232 sd1446 SD4100

    AM81214-060

    Abstract: No abstract text available
    Text: AM81214-060 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: The ASI AM81214-060 is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • PG = 6.6 dB at 55 W/1400 MHz • Omnigold Metalization System


    Original     		PDF AM81214-060 AM81214-060

    PH0912-35

    Abstract: PH3135-5M PH0810-4 ST replacement reference SD4590 CROSS MACOM sd4701 PH1214-6M SD2903 DU2805S
    Text: June 1999 ST CROSS REFERENCE WITH MACOM INDUSTRY PART NUMBER DU2805S DU2810S DU2820S DU2840S DU28200M FH2164 PH0810-4 PH0810-15 PH0810-35 PH0810-60A PH0810-60B PH0810-75 PH0810-150 PH0912-35 PH0912-120 PH0912-150 PH1090-350L PH1090-400S PH1090-550S PH1214-55EL


    Original     		PDF DU2805S DU2810S DU2820S DU2840S DU28200M FH2164 PH0810-4 PH0810-15 PH0810-35 PH0810-60A PH0912-35 PH3135-5M PH0810-4 ST replacement reference SD4590 CROSS MACOM sd4701 PH1214-6M SD2903 DU2805S

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: /=7 S G S -TH O M S O N 7 ^ #. Ran g^@ lllLigTO(M D(gl_ A M 8 1 214-060 RF & M I C R O W A V E T R A N S I S T O R S L-BA ND RADAR A P P L I C A T I O N S > R E F R A C T O R Y /G O L D M E TA LLIZA TIO N • E M IT T E R S ITE BALLASTED ■ R U G G E D IZ E D V S W R


    OCR Scan     		PDF 00bSDb3 AM81214-060 7T2T237 M81214-060

    s038

    Abstract: 5S038 AM1214-300 AM80814-005 AM80814-025 AM81214-006 AM81214-015 AM81214-030 S042
    Text: S IL IC O N P O W E R T R A N S IS T O R S Short, medium and long pulse radar applications are served by the SGS-THOMSON product line of L-Band pulse devices. Featuring refractory-gold metallization for long-term reliability and system availability, these devices are


    OCR Scan     		PDF AM80814-005 AM80814-025 AM1214-300 AM81214-006 AM81214-015 AM81214-030 AM81214-060 AM1214-100 AM1214-Ã AM1214-200 s038 5S038 S042

    MSC1002

    Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
    Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition


    OCR Scan     		PDF 28Vdc MSC1002 AVIA c cube IC CD 4440 amplifier circuit diagram