AN620 Search Results

AN-620

Abstract: m27c512 equivalent eprom programming
Contextual Info: AN620 APPLICATION NOTE ON-BOARD PROGRAMMING OF OTP EPROM by Franco MORANDI In recent years interest has been growing in On-Board Programming of OTP EPROM memories. There are two main factors which have stimulated this interest: the growth of the FLASH Memory market and the

LT 543 IC pin diagram

Abstract: AN6203 AN-6203 ic level audio meter s1sj
Contextual Info: t P an ason ic ic r AN6203 ‘y 4 > 7 > - ? , U'iJUjt — f m i S '-• ? K 7 i> 7 > / , Line Output, Head Phone Amplifier and Level M eter Amplifier ■ «R m A N 6 20 3 li, Unit : mm #-fc v h r " / ^ ^ > 7 I , m ■ • i ft 'i ^ H it), t j tel Ij ^ T its ii k. >1— bi±.iit\li',1}cr>

AN6209

Abstract: and/lt 6209
Contextual Info: Panasonic ic AN6209, A N 6 2 0 9 S 7 -^ 3 -^ ', VTR • SifeIIl£& /R ecording and Playback Circuits for Tape Recorders and VTRs • « AN6209, ■ 4# * A N6209S i±, V TR tt • m ••/ - f M X< 7 7 x 3 V W - f f l& n T ) • if i;} § ^ A * « # 0 .9 5 //V , P . B . , Rg = 2 .2 k ii , 2 0 H z ~ 2 0 k H z )

AN6209

Abstract: AN6209S 6209 470PF SO-22D
Contextual Info: Panasonic IC A N 6 2 0 9 , A N 6209S 3 — ~J VTR h • # * k [U & /R e c o r d in g and Playback C ircuits for Tape R ecorders and VTRs • « AN6209, * AN6209S I t , f - t i / 3 - f , VTR & • / U ' r ? y 3 ffl t # 0 » # ■ 4# • > @ l& x-f - / f i W l L T i ' i t .

AN620

Abstract: AN-620 N/AN620
Contextual Info: AN620 APPLICATION NOTE ON-BOARD PROGRAMMING OF OTP EPROM by Franco MORANDI In recent years interest has been growing in On-Board Programming of OTP EPROM memories. There are two main factors which have stimulated this interest: the growth of the FLASH Memory market and the

AN620

Abstract: M27C801 PDIP32 PLCC32 TSOP32 VA10
Contextual Info: M27C801 8 Mbit 1 Mb x 8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ FAST ACC ESS TIME: 45 ns ■ LOW POWER CONSUMPTION: - Active Current 3 5 m A a t5 M H z - Standby Current 100|jA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■ PROGRAMMING TIME: 100|^s/byte (typical)

1A11

Abstract: M27C800 PDIP42
Contextual Info: M27C800 8 Mbit 1 Mb x8 or 512Kb x16 UV EPROM and O TP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 70ns BYTE-W IDE or WORD-WI DE CONFIGURABLE 8 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION - Active Current 70mA at 8MHz - Stand-by Current 100|jA

M27W201

Abstract: AN620 M27C2001 PLCC32 TSOP32 Application Note EPROM Programming
Contextual Info: . . SGS-THOMSON k7 # . M27W201 RfilDÊlMSJlilLIlÊ'inEORODtgS 2 Mbit 256Kb x 8 Low Voltage OTP EPROM • LOW VOLTAGE READ OPERATION: 2.7V to 3.6V ■ FAST ACCESS TIME: - 70ns at Vcc = 3.0V to 3.6V - 80ns at Vcc = 2.7V to 3.6V ■ LOW POWER CONSUMPTION: - Active Current 15mA

M27C1001

Abstract: EEPROM PDIP32 PLCC32 TSOP32
Contextual Info: M27C1001 1 Mbit 128Kb x8 UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Current 30mA at 5Mhz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 100µs/byte (typical)

M27C160

Abstract: Q15A
Contextual Info: M27C160 16 Megabit 2Meg x 8 or 1Meg x 16 UV EPROM and OTP EPROM FAST ACCESS TIME: 90ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit MASK ROM COMPATIBLE LOW POWER CONSUMPTION – Active Current 70mA at 8MHz – Standby Current 100µA PROGRAMMING VOLTAGE 12.5V ± 0.3V

M27V201

Abstract: PDIP32 PLCC32 TSOP32
Contextual Info: M27V201 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ FAST ACCESS TIME: 120ns ■ LOW POWER CONSUMPTION: – Active Current 15mA at 5MHz 32 32 – Standby Current 20µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

ST M27C256B

Abstract: M27C256B PDIP28 PDIP32 PLCC32
Contextual Info: M27C256B 256 Kbit 32Kb x 8 UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Current 30mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 100µs/byte

M27C4002

Abstract: JLCC44W PLCC44 Q0-Q15
Contextual Info: M27C4002 4 Megabit 256K x 16 UV EPROM and OTP EPROM FAST ACCESS TIME: 70ns LOW POWER ”CMOS” CONSUMPTION: – Active Current 50mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING PROGRAMMING TIMES of AROUND 24sec.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

Contextual Info: M27C320 32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM PRELIMINARY DATA 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 80ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 32 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 70mA at 8MHz – Stand-by Current 100µA

M27C160

Abstract: PDIP42 PLCC44 Q15A SDIP42
Contextual Info: M27C160 16 Mbit 2Mb x 8 or 1Mb x 16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 50ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE 42 42 ■ 16 Mbit MASK ROM REPLACEMENT 1 ■ LOW POWER CONSUMPTION FDIP42W (F) 1 PDIP42 (B)

M27C4001

Abstract: M27W401 PDIP32 PLCC32 TSOP32
Contextual Info: M27W401 4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM • 2.7V to 3.6V LOW VOLTAGE in READ OPERATION ■ ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V 32 32 – 80ns at VCC = 2.7V to 3.6V ■ PIN COMPATIBLE with M27C4001 ■ LOW POWER CONSUMPTION: 1

Contextual Info: M27C202 2 Mbit 128Kb x 16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 45ns ■ LOW POWER CONSUMPTION: - Active Current 50mA at 5MHz - Standby Current 1OOjaA ■ PROGRAMMING VOLTAGE: 12.7 5 V ± 0.25V FDIP40W (F)

Contextual Info: M27C2001 2 Mbit 256Kb x 8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ FAST ACCESS TIME: 55ns ■ LOW POWER CONSUMPTION: - Active Current 30mA at 5MHz - Standby Current 1OOjaA ■ PROGRAMMING VOLTAGE: 12.7 5 V ± 0.25V FDIP32W (F)

Contextual Info: w # S G S -T H O M S O N M27V160 V # « RitlD M li[Lli©inS lii!lD©i 16 Mb 2Mb x 8 or 1Mb x 16) LOW VOLTAGE UV EPROM and OTP EPROM NOT FOR NEW DESIGN • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 110ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE

Contextual Info: /T T SGS'THOMSON ^ 7 # G fflD IIM ilL IO T M O IS i M 2 7 V 256 LOW VOLTAGE 256K 32K x 8 UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 90ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|jA

Contextual Info: / T T S G S 'T H O M S O N ^ 7 # GfflDIIMilLIOTMOISi M 27V102 LOW VOLTAGE 1 Megabit 64Kx16 UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V > FAST ACCESS TIME: 90ns ■ LOW POWER ’’CMOS” CONSUMPTION: - Active Current 35mA - Standby Current 100|jA

Contextual Info: /T T SGS'THOMSON ^ 7 # G fflD IIM ilLIO T M O IS i M 2 7V 5 12 LOW VOLTAGE 512K 64K x 8 UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 90ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|jA

Contextual Info: /= T ^ 7 i. S G S -T H O M S O N H [l g[S ilLIO T® iD (gi M 27C 2001 2 Megabit (256K x 8 UV EPROM and OTP EPROM • FAST ACCESS TIME: 55ns ■ LOW POWER ’’CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|iA ■ PROGRAMMING VOLTAGE: 12.75V