APT40GT60BR Search Results

Thunderbolt

Abstract: APT40GT60BR
Contextual Info: APT40GT60BR 600V 80A Thunderbolt IGBT TO-247 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop

Thunderbolt IGBT

Contextual Info: APT40GT60BR 600V, 80A, VCE ON = 2.1V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. TO

th 2190

Contextual Info: APT40GT60BR APT40GT60BR 600V 80A Thunderbolt IGBT™ TO-247 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop

APT40GT60BR

Contextual Info: APT40GT60BR 600V, 80A, VCE ON = 2.1V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. TO

igbt 400V 40A

Abstract: silicon carbide
Contextual Info: APT40GT60BR 600V, 80A, VCE ON = 2.1V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. TO

Contextual Info: APT40GT60BR ADVANCED POW ER Te c h n o l o g y 600V 80A Thunderbolt IGBT The Thunderbolt IGBT is a new generation ot high voltage power IGBTs. Using Non-Punch ThroughTechnology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.

Contextual Info: APT40GT60BR APT40GT60BR 600V 80A Thunderbolt IGBT The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop

ic 7493

Abstract: data sheet IC 7493 7493 IC IC 7493 data sheet Datasheet of 7493 IC APT40GP60B2DQ2G definition of 7493 ic 7493 7493 APPLICATION 7493 integrated circuit
Contextual Info: APT40GP60B2DQ2 G 600V TYPICAL PERFORMANCE CURVES APT40GP60B2DQ2 APT40GP60B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching

Contextual Info: APT50GT60BRDQ2 G 600V TYPICAL PERFORMANCE CURVES APT50GT60BRDQ2 APT50GT60BRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 47 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast

Contextual Info: 600V 2x40A APT40DQ60BCT APT40DQ60BCTG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE TO PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode

transistor k 4213

Abstract: APT40DQ60BCT APT40DQ60BCTG APT40GT60BR
Contextual Info: 600V 2x40A APT40DQ60BCT APT40DQ60BCTG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode

transistor k 4212

Abstract: APT40DQ60S datasheets transistor k 4212 k 4212 APT40DQ60B APT40GT60BR
Contextual Info: 1 2 TO -2 4 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK 1 2 APT40DQ60B APT40DQ60S 600V 600V 40A 40A 2 1 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times

Contextual Info: APT65GP60L2DQ2 600V TYPICAL PERFORMANCE CURVES APT65GP60L2DQ2 APT65GP60L2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO-264 Max The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching

SP6-P

Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
Contextual Info: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.

catalog mosfet Transistor smd

Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
Contextual Info: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance

APT10026JN

Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
Contextual Info: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on

smps 1000W

Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
Contextual Info: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain

APT30GN60BDQ2

Abstract: APT30GN60BDQ2G MIC4452 30A 600V Ultrafast Diode APT TO-247
Contextual Info: APT30GN60BDQ2 G 600V TYPICAL PERFORMANCE CURVES APT30GN60BDQ2 APT30GN60BDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum

Contextual Info: APT50GP60B2DQ2 G 600V TYPICAL PERFORMANCE CURVES APT50GP60B2DQ2 APT50GP60B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® (B2) T-Max® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching

Contextual Info: APT40GP60B2DQ2 G 600V TYPICAL PERFORMANCE CURVES APT40GP60B2DQ2 APT40GP60B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching

5017BVR

Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
Contextual Info: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on

APT50GT60BRDQ2

Abstract: APT50GT60BRDQ2G APT40GT60BR
Contextual Info: APT50GT60BRDQ2 G 600V TYPICAL PERFORMANCE CURVES APT50GT60BRDQ2 APT50GT60BRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 47 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast

APT50GN60BDQ2G

Abstract: APT50GN60BDQ2 MIC4452 silicon carbide apt50gn60 IGBT 1500 APT50GN60BDQ
Contextual Info: APT50GN60BDQ2 G 600V TYPICAL PERFORMANCE CURVES APT50GN60BDQ2 APT50GN60BDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum

400v 20A ultra fast recovery diode

Abstract: TO-264 Jedec package outline 80A bridge rectifier APT40GT60BR APT68GA60B2D40 APT68GA60LD40 MIC4452
Contextual Info: APT68GA60B2D40 APT68GA60LD40 600V APT68GA60B2D40 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low