APT8024B2VFR Search Results
APT8024B2VFR Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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APT8024B2VFR | Advanced Power Technology | High voltage N-Channel enhancement mode power MOSFET | Original | 40.08KB | 2 | |||
APT8024B2VFR |
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Power MOS V FREDFET | Original | 139.79KB | 4 |
APT8024B2VFR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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APT8024B2VFRContextual Info: APT8024B2VFR APT8024LVFR 800V 33A 0.240W POWER MOS V FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT8024B2VFR APT8024LVFR O-264 O-264 APT8024 IN810 MIL-STD-750 APT8024B2VFR | |
Contextual Info: APT8024B2VFR APT8024LVFR 800V 33A POWER MOS V FREDFET 0.240Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT8024B2VFR APT8024LVFR O-264 O-264 APT8024B2VFR O-247 | |
PF7700Contextual Info: APT8024B2VFR APT8024LVFR 800V 33A 0.240W POWER MOS V FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT8024B2VFR APT8024LVFR O-264 O-264 APT8024 Curr084) O-247 PF7700 | |
APT8024B2VFR
Abstract: APT8024LVFR
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APT8024B2VFR APT8024LVFR O-264 O-264 APT8024B2VFR O-247 APT8024LVFR | |
Contextual Info: APT8024B2VFR APT8024LVFR 800V 33A POWER MOS V FREDFET 0.240Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT8024B2VFR APT8024LVFR O-264 O-264 APT8024B2VFR O-247 | |
APT8024B2VFR
Abstract: APT8024B2VR APT8024LVR
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APT8024B2VR APT8024LVR O-264 O-264 APT8024B2VFR O-247 APT8024B2VR APT8024LVR | |
catalog mosfet Transistor smd
Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
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5017BVR
Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
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MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60 | |
sot-227 footprint
Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
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mj 1504 transistor equivalent
Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
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APT6015LVR
Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
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MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR | |
APT100GF60LR
Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
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Contextual Info: APT8024B2VR APT8024LVR 800V 33A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT8024B2VR APT8024LVR O-264 O-264 APT8024B2VFR O-247 | |
Contextual Info: APT8024B2VR APT8024LVR 800V 33A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT8024B2VR APT8024LVR O-264 O-264 APT8024B2VFR O-247 |