BCW66G Search Results

Contextual Info: BCW66G Small Signal Transistor NPN TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Mounting Pad Layout Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4) 0.079 (2.0) 0.035 (0.9) .007 (0.175) .005 (0.125) max. .004 (0.1) .037(0.95) .037(0.95) Pin Configuration

Contextual Info: BCW66G BCW66G NPN General Purpose Amplifier • This device is designed for general purpose amplifier applications at collector currents to 500mA. • Sourced from process 13. 3 2 1 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25°C unless otherwise noted

BCW65A

Abstract: BCW65B BCW65BR BCW66H BCW65 BCW65C BCW65CR BCW66F BCW66FR BCW66G
Contextual Info: BCW65 BCW66 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3- AUGUST PARTMARKING 1995 DETAILS EA BCW65A13 - BCW65B - EB BCW65BR - 5V BCW65C - EC BCW65CR - 6V 7P BCW65A - EF BCW66FR - BCW66G - EG BCW66GF - 5T BCW66H - EH BCW66HF - 7M TYPES BCW65 -

marking EG

Contextual Info: MCC TM Micro Commercial Components BCW66G
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features NPN Small Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors BCW66GLT1 NPN Silicon 3 COLLECTOR 3 1 1 BASE 2 2 EMITTER MAXIMUM RATINGS CASE 318–08, STYLE 6 SOT–23 TO–236AB Rating Symbol Value Unit Collector–Emitter Voltage V CEO 45 Vdc Collector–Base Voltage

BCW66G

Abstract: BCW68G vishay TRANSISTOR Sot-23 MARKING CODE
Contextual Info: BCW66G Vishay Semiconductors formerly General Semiconductor Small Signal Transistor NPN TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Mounting Pad Layout Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) 1. Base 2. Emitter 3. Collector .007 (0.175) .005 (0.125)

BCW66GLT1

Abstract: BCW66GLT1G
Contextual Info: BCW66GLT1 General Purpose Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 Vdc Collector −Base Voltage VCBO 75 Vdc Emitter −Base Voltage

BCW66GLT1G

Abstract: BCW66GLT3G
Contextual Info: BCW66GLT1G General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 Vdc

BCW66G

Contextual Info: BCW66G BCW66G NPN General Purpose Amplifier • This device is designed for general purpose amplifier applications at collector currents to 500mA. • Sourced from process 13. 3 2 1 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25°C unless otherwise noted

Contextual Info: BCW66G Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)75 I(C) Max. (A)500m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20n @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V)700m @I(C) (A) (Test Condition)500m

marking EG

Contextual Info: MCC TM Micro Commercial Components BCW66G
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features NPN Small Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

SBCW66GLT1G

Contextual Info: BCW66GLT1G, BCW66GLT1G General Purpose Transistor NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

max7575

Abstract: BCW66F BCW66G BCW66H
Contextual Info: BCW66F, BCW66G BCW66H COIL GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PA C K A G E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m J3.0 2 .8 * 0.14 0.48 0.38 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER

ic 556

Abstract: transistor SMD bcw66h BCW66F BCW66G BCW66H for ic 556 marking cd 556 SMD TRANSISTOR MARKING bw
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLINE DETAILS

Contextual Info: 23333=14 000G7b5 Ô71 BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAG E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m J3.0 2.8 0.14 0.09 0.48 0.38 3 L 0.70 0.50 § 2.6 Pin configuration

Contextual Info: BCW66GLT1G, BCW66GLT1G General Purpose Transistor NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: BCW66GL General Purpose Transistor NPN Silicon Features • This is a Pb−Free Device http://onsemi.com COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 Vdc Collector −Base Voltage VCBO 75 Vdc Emitter −Base Voltage

BCW66G

Contextual Info: BCW66G BCW66G NPN General Purpose Amplifier 3 • This device is designed for general purpose amplifier applications at collector currents to 500mA. • Sourced from process 19. 2 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector 1 Absolute Maximum Ratings * TC=25°C unless otherwise noted

BCW66FR

Abstract: BCW66HR vce 1v BCW66 BCW66F BCW66G BCW66GR BCW66H BCW68
Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - MARCH 2001 PARTMARKING DETAILS – BCW66F – EF BCW66G – EG BCW66H – EH BCW66FR – BCW66GR – BCW66HR – BCW66 7P 5T 7M E C B COMPLEMENTARY TYPE – BCW68 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER

Contextual Info: L BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N -P -N transistor M arking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLIN E DETAILS A LL DIM ENSIONS IN m m _3.0 2 .8" 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 • COLLECTOR

vishay TRANSISTOR Sot-23 MARKING CODE

Contextual Info: BCW66G Vishay Semiconductors formerly General Semiconductor Small Signal Transistor NPN TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Mounting Pad Layout Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) 1. Base 2. Emitter 3. Collector .007 (0.175) .005 (0.125)

Contextual Info: MCC TM Micro Commercial Components BCW66G
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features NPN Small Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

BCW66H

Abstract: BCW66F BCW66G
Contextual Info: 23033=14 0ÜQ0 7b5 Ô71 BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAG E O UTLIN E D ETA ILS ALL D IM EN SIO N S IN m m _3.0 2.8 0.14 0.09 0.48 0.38 Pin configuration _L § 3 0.70 0.50

100MHZ

Abstract: BCW66G
Contextual Info: RECTRON BCW66G SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.8 A * Collector-base voltage V(BR)CBO : 75 V * Operating and storage junction temperature range