BFP520 Search Results

BFP520F

Abstract: BFP420F TSFP-4 transistor BF 235
Contextual Info: BFP520F NPN Silicon RF Transistor* • For highest gain low noise amplifier 3 at 1.8 GHz and 2 mA / 2 V 2 4 1 Outstanding Gms = 23 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f T = 45 GHz • Gold metallisation for high reliability

IC 7481 pin configuration

Abstract: IC 7481 ev 2816 01177 ic rom 2816 BFP520 BFP520 application notes k 3683 transistor
Contextual Info: SIEGET
45 BFP520 NPN Silicon RF Transistor 3
For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB
For oscillators up to 15 GHz 2
Transition frequency fT = 45 GHz 1 VPS05605
Gold metallization for high reliability

AN051A

Abstract: transistor cross ref BFP520 application notes AN051 BFP520 2500G Ghz dB transistor N051 amplifier TRANSISTOR 12 GHZ amplifier TRANSISTOR 14 GHZ
Contextual Info: A pp l ic a t io n N o t e, R e v . 2. 0 , J a n. 2 00 7 A p p li c a t i o n N o t e N o . 0 5 1 SIEGET45 - Low Noise Amplifier with BFP520 T r a n s i s t o r a t 1 .9 G H z R F & P r o t e c ti o n D e v i c e s Edition 2007-01-08 Published by Infineon Technologies AG

transistor B 540

Abstract: TRANSISTOR 1221 sot173 SOT-173 wideband transistor sot173 transistor 541 SOT173 RF transistor
Contextual Info: O bjective specification P h ilip s S em icon du ctors T ^ 3 /-2 NPN 9 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES SbE / BFP520 7110fl2b 0045303 7T3 H P H IN PINNING DESCRIPTION PIN • High power gain • Low noise figure 1 collector • High transition frequency

BFP520F

Contextual Info: SIEGET
45 BFP520F NPN Silicon RF Transistor Preliminary data XYs
For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V 3 Outstanding Gms = 23 dB 2 4 Noise Figure F = 0.95 dB 1
For oscillators up to 15 GHz
Transition frequency fT = 45 GHz TSFP-4

BFP520

Abstract: VPS05605
Contextual Info: SIEGET
45 BFP520 NPN Silicon RF Transistor 3
For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB
For oscillators up to 15 GHz 2
Transition frequency fT = 45 GHz 1 VPS05605
Gold metallization for high reliability

Contextual Info: BFP520F Low Noise Silicon Bipolar RF Transistor • For highest gain and low noise amplifier 3 Outstanding Gms = 22.5 dB at 1.8 GHz 2 4 1 Minimum noise figure NFmin = 0.95 dB at 1.8 GHz • For oscillators up to 15 GHz • Transition frequency fT = 45 GHz

BFP520F

Contextual Info: SIEGET
45 BFP520F NPN Silicon RF Transistor Preliminary data XYs
For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V 3 Outstanding Gms = 23 dB 2 4 Noise Figure F = 0.95 dB 1
For oscillators up to 15 GHz
Transition frequency fT = 45 GHz TSFP-4

SOT173

Abstract: BFP520 MBB866 mbc860 wideband transistor sot173
Contextual Info: Philips Semiconductors Hi bbS3T31 GOBIMTM ITÒ APX Objective specification NPN 9 GHz wideband transistor ^ _ FEATURES PINNING BFP520 N AnER PHILIPS/DISCRETE DESCRIPTION • High power gain PIN • Low noise figure 1 collector • High transition frequency

Contextual Info: SIEGET
45 BFP520F NPN Silicon RF Transistor Preliminary data XYs
For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V 3 Outstanding Gms = 23 dB 2 4 Noise Figure F = 0.95 dB 1
For oscillators up to 15 GHz
Transition frequency fT = 45 GHz TSFP-4

Contextual Info: SIEGET
45 BFP520F NPN Silicon RF Transistor Preliminary data XYs
For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V 3 Outstanding Gms = 23 dB 2 4 Noise Figure F = 0.95 dB 1
For oscillators up to 15 GHz
Transition frequency fT = 45 GHz TSFP-4

Contextual Info: • I P h ilip s S em iconductors ^ 5 3 ^ 3 1 DO Sm ^M n fl M APX O bje ctive sp e c ific a tio n NPN 9 GHz wideband transistor ^ ^ FEATURES BFP520 N a HER PHILIPS/DISCRETE PINNING • High power gain PIN • Low noise figure 1 O’ n DESCRIPTION collector

Contextual Info: bbSBTBl 003221b A23 Philips Semiconductors Product specification W A P X NPN 9 GHz wideband transistor crystal X3A-BFR520 . . N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied

BFG520

Abstract: X3A-BFR520 SOT173 BFP520 BFR520 SOT-173
Contextual Info: P h ilip s S em icon du ctors Produ ct specification •T'3 1-9-0 NPN 9 GHz wideband transistor crystal X3A-BFR520 StE » PHILIPS INTERNATIONAL DESCRIPTION 711DfiEb DDMblOb 2b5 M E C H A N IC A L DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied

BFP521V

Abstract: BFP519 BFP520 tranzystor BFP521 T018 Scans-0015604 tranzystory TEWA
Contextual Info: T R A N Z Y S T O R Y n-p-n BFP519, BFP520 i BFP521 23-74/2 SWW 1156-213 Typ BFP519 BFP520 B F P 52J Napiqcie kolektor-baza Napi^cie kolektor-em iter Napi^cie em iter-baza Prqd kolektora P rg d szczytowy kolektora P r^d bazy Moc kolektora T em peratura zl^cza

BFP520 application notes

Abstract: SIEGET 45
Contextual Info: SIEGET
45 BFP520 NPN Silicon RF Transistor 3
For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB
For oscillators up to 15 GHz 2
Transition frequency fT = 45 GHz 1 VPS05605
Gold metallization for high reliability

Contextual Info: BFP520F NPN Silicon RF Transistor* • For highest gain low noise amplifier 3 at 1.8 GHz and 2 mA / 2 V 2 4 1 Outstanding Gms = 23 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f T = 45 GHz • Gold metallisation for high reliability

SOT-173

Abstract: sot173 BFP96 BFQ32C
Contextual Info: 55 RF/Microwave Devices RF W ideband Transistors cont. Type No. BFG198 BFG505 BFG505/X BFG505/XR BFG520 BFG520/X BFG520/XR BFG540 BFG540/X BFG540/XR BFG541 BFG590 BFG590/X BFG590/XR BFG591 BFG621 BFG741 BFP90A BFP91A BFP96 BFP505 BFP520 BFP540 BFQ17 BFQ18A

BFP520

Abstract: 702 Z TRANSISTOR SIEMENS BFP520
Contextual Info: Application Note No. 051 Discrete & RF Semiconductors R. Sedlmaier, HL HF AT SIEGET45 - Low Noise Amplifier with BFP520 Transistor at 1.9 GHz This application note describes an example of a Low Noise Amplifier with the BFP520 5th Generation, SOT343 SIEGET 45-Line. Improved performance in Gain

BFP520

Abstract: BGA420
Contextual Info: BFP520 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz and 2 mA / 2 V 2 4 Outstanding Gms = 23.5 dB 1 Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f T = 45 GHz • Gold metallisation for high reliability

SOT173

Abstract: BFR520 transistor BFG520 BFP520 BFR520 X3A-BFR520
Contextual Info: bbSBTBl 0G3221b ÔE3 W A P X Philips Semiconductors Product specification NPN 9 GHz wideband transistor crystal X3A-BFR520 N AMER PHILIP S/D ISCRETE DESCRIPTION b'IE D MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied

BFP520

Abstract: BGA420 24 marking code transistor
Contextual Info: BFP520 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz and 2 mA / 2 V 2 4 Outstanding Gms = 23.5 dB 1 Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f T = 45 GHz • Gold metallisation for high reliability

bfp520

Abstract: BFP520 application notes AN077 BGA420 spice gummel
Contextual Info: BFP520 NPN Silicon RF Transistor • Low noise amplifier designed for low voltage 3 applications, ideal for 1.2 V or 1.8 V supply 2 4 voltage. Supports 2.9 V V cc with enough external 1 collector resistance. • High gain and low noise at high frequencies

SOT173

Abstract: BFP520 BFP520 application notes sot-173 NPN planar RF transistor SOT173 RF transistor
Contextual Info: Objective specification Philips Semiconductors T^ 3/-Z / NPN 9 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES SbE D BFP520 7110fl2b 0045303 7T3 H P H IN PINNING DESCRIPTION PIN • High power gain • Low noise figure 1 collector • High transition frequency