BFR360F Search Results

clapp oscillator

Abstract: bjt oscillator application note BJT phase shift oscillator AN061 AN-061 BBY58 BBY58-02V BFR360F bjt oscillator Varactor Diode RF
Contextual Info: Application Note No. 061 Silicon Discretes W-CDMA 2.3 GHz VCO using BFR360F and BBY58-02V Features • Low phase noise of < -90 dBc / Hz at 10 kHz using a low Q resonator. • 0 dBm output power at low current consumption. 2 3 1 • Highly linear oscillation frequency

BFR360F

Abstract: AN077
Contextual Info: BFR360F NPN Silicon RF Transistor • Low noise amplifier for low current applications • Collector design supports 5V supply voltage 2 3 1 • For oscillators up to 3.5 GHz • Low noise figure 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package • Qualified according AEC Q101

IC 7437

Abstract: BFR360F
Contextual Info: BFR360F NPN Silicon RFTransistor Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR360F NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation 2 3
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 1
Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR360F NPN Silicon RF Transistor* • Low voltage/ low current operation 2 3 • For low noise amplifiers 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR360F NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation 2 3
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 1
Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

s parameters 4ghz

Contextual Info: BFR360F NPN Silicon RFTransistor Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precaution!

transitor RF 98

Abstract: BFR360F E6327 GMA marking
Contextual Info: BFR360F NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation 2 3
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 1
Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR360F NPN Silicon RFTransistor Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFR360F

Abstract: 104GHz transitor RF 98
Contextual Info: BFR360F NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation 2 3
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 1
Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR360F Low Noise Silicon Bipolar RF Transistor • Low noise amplifier for low current applications • Collector design supports 5 V supply voltage 2 3 1 • For oscillators up to 3.5 GHz • Low noise figure 1.0 dB at 1.8 GHz • Pb-free RoHS compliant and halogen-free thin small

Contextual Info: BFR360F NPN Silicon RF Transistor • Low noise amplifier for low current applications 2 3 • Collector design supports 5V supply voltage 1 • For oscillators up to 3.5 GHz • Low noise figure 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package • Qualified according AEC Q101

RF NPN POWER TRANSISTOR C 10-12 GHZ

Abstract: BFR360F TRANSISTOR MARKING NK
Contextual Info: BFR360F NPN Silicon RF Transistor* • Low voltage/ low current operation • For low noise amplifiers 2 3 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101

Contextual Info: BFR360F NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation 2 3
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 1
Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Contextual Info: Product Brief BGA619 High IP3 SiGe LNA Designed fo r 1 .9 G H z A pp l i ca t i o ns T h e B G A 6 1 9 i s a S i l i c o n - G e r m a n i u m SiGe low noise amplifier (LNA) designed for PCS CDMA2000 applications from 1.93 to 1.99GHz. Based on Infineon's B7HF technology the IC

clapp oscillator

Abstract: history of varactor diode BFR36 BFR360 BBY58-02V BFR360F N061 SC79 transistor oscillator circuit BJT phase shift oscillator
Contextual Info: A pp li c at i on N ot e , R ev . 2. 0 , N ov . 2 00 6 A p p li c a t i o n N o t e N o . 0 6 1 W - C D M A 2 . 3 G H z V C O u s i n g B F R 3 60 F an d B B Y 58 - 0 2 V S m a l l S i g n a l D i s c r et e s Edition 2006-11-07 Published by Infineon Technologies AG

FSEM30

Abstract: BFR360F TSFP-3 transistor A 928 d 882 transistor Transistor Cross Reference transistor cross reference chart
Contextual Info: Ap pl ica t io n N o te, Re v. 1 . 2, F e br ua ry 2 00 8 A p p li c a t i o n N o t e N o . 1 5 0 A 900 MHz Low Noise Amplifier Using the B F R 3 6 0 F T r a n s i s t o r i n T S F P - 3 P ac k a g e R F & P r o t e c ti o n D e v i c e s Edition 2008-02-22

clapp oscillator

Abstract: history of varactor diode BFR360 BBY58-02V BFR360F N061 SC79 varactor diode q factor measurement
Contextual Info: A pp li c at i on N ot e , R ev . 2. 0 , N ov . 2 00 6 A p p li c a t i o n N o t e N o . 0 6 1 W - C D M A 2 . 3 G H z V C O u s i n g B F R 3 60 F an d B B Y 58 - 0 2 V R F & P r o t e c ti o n D e v i c e s Edition 2006-11-07 Published by Infineon Technologies AG

BFP540

Abstract: BFR380F Transistor BFP540 BFP620 applications note AN057 AN060 AN075 BFP620 BFR340F BFR360F
Contextual Info: A pp l ic a t io n N o t e, R e v . 2. 0 , J a n. 2 00 7 A p p li c a t i o n N o t e N o . 0 7 5 H i g h T h i r d- O r d e r I n p u t I n te r c e p t P o i n t C D M A 8 0 0 Low Noise Amplifier R F & P r o t e c ti o n D e v i c e s Edition 2007-01-08

BFP620F

Abstract: TSFP-4 BFR34* transistor BC848BF BA892-07F BAT62-07F BAS40-04F Infineon Technologies transistor 4 ghz BAR63-07F BAV70F
Contextual Info: P B R O D U C T R I E F A new Milestone in Miniaturization of SMD Standard Packages for Discrete Components TSFP stands for Thin Small Flat Package. With a reduced height of max. 0.59 mm vs. 0.8 mm for a SC-75 package and an outline of only 1.2 x 1.2 mm2 for TSFP-3 (vs. 1.6 × 1.6 mm2 for

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

cdma Booster schematic

Abstract: uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz
Contextual Info: May 2007 Product & Application Guide 2007 Small Signal Discretes www.infineon.com/smallsignaldiscretes Table of Contents Applications Mobile Communication ……………. Consumer …………………………………. Automotive & Industrial.………….