BSS82 Search Results

Contextual Info: SMD Type SMD Type Transistors IC Product specification BSS80,BSS82 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low collector-emitter saturation voltage. 0.55 High DC current gain: 0.1mA to 500 mA. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1

SS80B

Contextual Info: SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSUE 2 - SEPTEMBER 95 Q_ P A R T M A R K IN G D E TA ILS - B S S 82B - CL B SS82C - CM BSS82B BSS82C ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BOL VALUE U N IT V CBO -60 V V CEO -60 V C o lle c to r-B a s e V o lta g e

BSS80B

Abstract: BSS80C BSS82B BSS82C DSA003681
Contextual Info: SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSUE 2 – SEPTEMBER 95 ✪ BSS82B BSS82C PARTMARKING DETAILS - BSS82B - CL BSS82C - CM C E B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO

BSS81C

Abstract: BSS79 BSS79B BSS79C BSS80 BSS81 BSS81B BSS82
Contextual Info: BSS79, BSS81 NPN Silicon Switching Transistors 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E

Contextual Info: BSS79, BSS81 NPN Silicon Switching Transistors 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E

Contextual Info: MOTOROLA r SC -CXSTRS/R Tb F> 6 3 6 7 2 54 M OT O RO L A SC XSTRS/R 1 DE • b 3 b 7 E S 4 F 96D 81971 _ Sym bol Value D T~j?r-/y BSS82B BSS82C M A X IM U M RATINGS Rating 0001^71 Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage

Contextual Info: BSS80, BSS82 PNP Silicon Switching Transistors 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS79, BSS81 NPN 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E

Contextual Info: BSS82 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)60è V(BR)CBO (V)60 I(C) Max. (A)800m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

BSS80B

Abstract: BSS79 BSS80 BSS80C BSS81 BSS82 BSS82B BSS82C marking BSs sot23
Contextual Info: BSS80, BSS82 PNP Silicon Switching Transistors 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS79, BSS81 NPN 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E

Contextual Info: BSS82B BSS82C SOT23 PIMP SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS BSS82B - CL BSS82C - CM ABSOLUTE MAXIMUM RATINGS C o llec to r-E m itte r V o lta g e E m itter-B ase V o ltag e VALUE U N IT V CBO -6 0 V V CE0 -6 0 V V EBO -5 V -8 0 0 mA 330

BSS82BL

Abstract: CL-60 BSS82CL MARKING 12E
Contextual Info: MO TOR OLA SC 12E D | b3b?aSM OOfiSTM4 ' XSTRS/R F T-37-J7 BSS82BL, CL M A X IM U M RATINGS Sym bol V alue Collector-Emitter Voltage VCEO 60 V dc Collector-Base V oltage VCBO 60 V dc Emitter-Base Voltage vebo 5.0 V dc Sym bol M ax Unit Pd 225 mW 1.8 mW/°C

TR MARKING 6t sot23

Abstract: ZD 103 ma BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20 BSS82B
Contextual Info: semiconductors *FERRANTI BSS82B, C PNP Silicon Planar General Purpose S w itc h in g Transistors DESCRIPTION These devices are intended fo r use in sm all and m edium signal a m p lifica tio n a p plication s fro m d.c. to radio frequencies. Encapsulated in th e po pu lar SOT-23 package th e device is

BSS80

Abstract: BSS82 SMD 8.2B
Contextual Info: Transistors IC SMD Type PNP Silicon Switching Transistors BSS80,BSS82 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low collector-emitter saturation voltage. 0.55 High DC current gain: 0.1mA to 500 mA. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1

BSS79

Contextual Info: BSS79, BSS81 NPN Silicon Switching Transistors 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E

BSS79

Abstract: BSS80 BSS80B BSS80C BSS81 BSS82 BSS82B BSS82C
Contextual Info: BSS80, BSS82 PNP Silicon Switching Transistors 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS79, BSS81 NPN 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E

marking BSs sot23

Abstract: 82c80 marking code bss sot TL1040 marking BSs sot23 siemens
Contextual Info: SIEMENS PNP Silicon Switching Transistors BSS 80 BSS 82 • High DC current gain • Low coltector-emitter saturation voltage • Complementary types: BSS 79, BSS 81 NPN Type BSS BSS BSS BSS 80 80 82 82 B C B C Marking Ordering Code (tape and reel) PinC onfiguration

BDP 284

Abstract: BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529
Contextual Info: SIEMENS List of Types in Alphanumerical Order Type Ordering Code Page BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-01 BAR 15-01 BAR 16-01 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

MLL34

Abstract: m6 sot-23 pinout sot-23 Marking KN bk sot 23 marking 16 SOT-143 MOTOROLA Cross Reference sot23 MMBT8599 motorola transistor dpak marking BC817-25L BC817-40L
Contextual Info: HOTOROLA SC XSTRS/R F HbZ D • b3b?2S4 DDTbSGl 3 ■ M O T b T ^ X l-O S Bipolar Transistors General-Purpose Transistors Pinout: 1-Base, 2-Em itter, 3-Collector Devices are listed in order of descending breakdown voltage. Marking V(BR)CEO Min ■»FE Max

1N 2907A

Abstract: BSS65 A12 marking marking H6 sot 23 FMMT2222 PNP 2907a SOT23 FMMT2907A marking FMMT2907A 2907a BCV72
Contextual Info: I FERRANTI FMMT2907 FMMT2907A X 11sem iconductors m P N P S ilico n Planar G eneral P urpose S w itc h in g Transistors DESCRIPTION These devices are intended fo r use in small and medium signal am plification applications from d.c. to radio frequencies. Com plem entary to th e F M M T 2222 series

Diodes Marking K6

Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C

BCW31

Abstract: BCW31R BCW32R BCW33R BCV72 BCW32 BCW33 BFQ31 BFQ31A ferranti
Contextual Info: I BCW31 BCW32 BCW33 FERRANTI T IIsemiconductorsL NPN S ilic o n Planar Sm all S ignal Transistors D ESC R IP TIO N These devices are intended fo r use in low level, general purpose applications. Encapsulated in the popular SO T-23 package these devices are designed specifically fo r use in thin and th ick Film

BCV72

Abstract: BCW29 BCW30 BCW31 BCW32 BFQ31 BFQ31A BFS20 BSS63 BSS64
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION T R A N S IS T O R S T R A N S IS T O R S Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW 60A BCW60B BCW 60C BCW 60D BCW 61A BCW61B BCW 61C

m6 marking transistor sot-23

Abstract: C5 MARKING TRANSISTOR transistor marking code 7E SOT-23 transistor ad 1v TRANSISTOR a43 A12 marking ht3 SOT23 transistor cg sot-23 transistor G1 SOT-23 transistor sot-23 Marking AR
Contextual Info: FERRANTI semiconductors HT3 PNP S ilicon Planar H igh V o lta g e T ra n s is to r D E S C R IP T IO N T h is p la s tic e n c a p s u la te d tra n s is to r is d e s ig n e d fo r a n y a p p lic a tio n re q u irin g h ig h v o lta g e c a p a b ility a t re la tiv e ly lo w

kn sot23

Abstract: sot-23 Marking KN BSV52 A12 marking CTC ef 125 33 m8 SOT23 transistor EH sot-23 marking code transistors BSV52 marking code 25X SOT23 C5 MARKING TRANSISTOR
Contextual Info: * FERRANTI semiconductors BSV52 NPN Silicon Planar High Speed Switching Transistor D E S C R IP TIO N This d evice is in te n d ed s p e c ific a lly fo r use in high speed, lo w c u rre n t s w itc h in g a p p lica tio n s. Encapsulated in th e p o p u la r S O T -2 3 package th ese devices