BSY95A Search Results

BSY95A

Contextual Info: b ^ E D • bbSB'IBl U Q 2 7 ^5 E a n N AMER PHILIPS/DISCRETE APX BSY95A A SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistors in a TO-18 metal envelope intended for general purpose low level switching applications. QUICK REFERENCE DATA Collector-base voltage open emitter

Contextual Info: BSY95A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 15V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

BF496

Abstract: CD639 BF959 BSY95A CC337 CC337-16 CC337-25 CC338-16 CC338-25 CC338-40
Contextual Info: Electrical Characteristics Ta=25°C, Unless Otherwise Specified Maximum Ratings Type No. BF496 BF959 BSY95A CC337 V CB0 V CE0 ^EBO (V) Min (V) Min (V) Min 30 20 3 30 20 50 20 15 45 3 5 5 'cBO (W) (A) @Tc=25°< 0.3 0.02 0.5 0.625 0.1 0.625 0.2 0.625 0.8 ^CB

Contextual Info: Electrical Characteristics Ta=25°C, Unless Otherwise Specified Maximum Ratings Type No. BF496 BF959 BSY95A CC337 VCBO VCEO ^EBO (W) (A) (V) (V) (V) Min Min Min @Tc=25°< 30 30 20 50 20 20 15 45 3 3 5 5 0.3 'cBO ^CB *CES ^CE e (V) m (V) W Max Max 0.02 0.5

BSY95A

Contextual Info: BSY95A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 15V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

BSY95A

Abstract: npn general purpose ic 2 bo 565 Silicon Epitaxial Planar Transistor philips bbS3T31
Contextual Info: b^E D • LbSB'iai □G27'1SS B'H IAPX N AMER PHILIPS/DISCRETE Jl BSY95A SILICON PLANAR EP ITAXIA LTR A N SISTO R NPN transistors in a T O -1 8 metal envelope intended fo r general purpose low level switching applications. Q U IC K R E F E R E N C E D A T A

BSY95A

Contextual Info: BSY95A SbE T> PHILIPS INTERNATIONAL TllOfiEb OOMHHMS 36T W P H I N T-3S-U SILICON PLANAR EPITAXIALTRANSISTOR NPN transistors in a TO-18 metal envelope intended for general purpose low level switching applications. Q U ICK R E F E R E N C E D A TA Collector-base voltage open emitter

Contextual Info: BSY95A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 15V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

BSY95A

Abstract: BSY95
Contextual Info: BSY95A NPN Silicon Epitaxial Planar Transistor for general purpose switching applications max.0.50 Metal case JEDEC TO-18 18 A 3 according to DIN 41 876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings Symbol

Contextual Info: 5LE J> m m057& 000btitiS 332 • ZETB^'2 '*7' 0 { NPN LOW LEVEL ZETEX SEMICONDUCTORS Type V CB V ceo V M ax lc V mA M a x V CE sat at V k mA Min f-jat hFE at !b Min M ax 'c m A MHz mA mA Continued P.ot at =ta Package Comple­ ment mW 2N3053 60 40 700 1.4

TO-39 1000 V

Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

2N2222 hfe

Abstract: 2N2222 chip ztx313 BCY71 2N2218 2N2219 2N2221 2N2222 2N2904 2N2906
Contextual Info: NPN SWITCHING M ax VCE sat| at Max Type V CEO Continued f T Min at h FE at P acksQ S 'c •c •b Min Max •c ton 'c . mA MHz mA ns mA mA 0.35 150 15 40 150 50 150 15 40 0.4 150 15 100 800 0.4 150 15 40 120 30 800 0.4 150 15 100 ZT80 25 500 0 .2 10 2 38 ZT87

BCY56

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M ax V CE sat| at V mA V 'c mA Min fT at hFE at Pto, at = 2ag*C Iß M in M ax 'c m A M Hz m A mW mA 2N3053 60 40 700 1.4 150 15 50 250 150 2N696 60 40 500 1.5 150 15 20 60 120 150 150 Continued Package Com ple­ ment

tube az2

Abstract: 2n2389 2n2906 sis BSS68 BSW41 2N2369 2N2906 to92 BFX34 BSS38 BSW41A
Contextual Info: Transistors Type No. g s 3 o Drawing reference silicon low/medium power switching transistors book 1 parts 1 and 2 VCEJO VcEO <V V) Maximum Ratings IcM lc(AV) (mA) ImA) Hfe min. max. Ptot at 25°C (°C) <mW) Tj at •c fT VcE(sat) min. max. (mA) (MHz) (V)

BSY55

Abstract: Scans-00107837 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military

BCY56

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5

transistor t2a

Abstract: 2n2206 TRANSISTOR ztx312 transistor 2N2475 N706A BSX12 2N2206 J 2N2369 BSV24 BSV25
Contextual Info: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics M axim um Ratings Type No. v CBO VCER Vebo P to t 25°C smb. fT min. Storajje Time t s ( i nax.) at l c mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200

switch NPN

Abstract: BSY18 2N2369 2n4390
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV

2N2220

Abstract: 2N2219 transistor 2N2475 2N2218 2N2219 2N2221 2N2222 2N2904 2N2905 2N2906
Contextual Info: NPN SWITCHING Type V ceo V Max Ir 't, mA Continued Max VcE sat at V hFE at Switching Times (Max) at fjM in at Package lc Ib Min. Max. !c !c mA MHz mA mA mA 25* 175* 150 TO-39 2N2904 25* 200* 150 TO-39 2N2905 20 20* 213* 150 TO-18 150 250 20 25* 175* 150 TO-18

2N2222

Abstract: 2N2904 2N2218 2N2219 transistor 2N2475 2N2219 2N2220 2N2221 2N2905 2N2906
Contextual Info: NPN SWITCHING Type V ceo V Max Ir 't, mA Continued Max VcE sat at hFE Switching Times (Max) at fjM in at at Package V !c mA lc Ib Min. Max. !c mA MHz mA mA — TO-39 150 250 20 25* 175* 150 TO-39 2N2904 150 250 20 25* 200* 150 TO-39 2N2905 60 150 250 20 20* 213*

2N1711 MOTOROLA

Abstract: DH3467CD equivalent 2N2219 2N2219A BSX45 bsy38 BSY39 SP3725 SP2222AF bsx46 equivalent SP2484F
Contextual Info: Transistors Cont. Discrete Devices Space Saving Devices Electrical Characteristics @ 25° C Maxim um Ratings Ambient P q Type Polarity One Both Side Sides mW mW VCE<Sat) @ Ic / lß H f e ic Vcb Volts VCE Volts VEB Volts Min/Max mA Volts m A/m A Frequency

2N2477

Abstract: 2N2222 2N2219 transistor 2N2938 2N2221 2N2483 FF2221E FF2221J FF2222E FF2222J
Contextual Info: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Devices in this range consist of four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal amplification through to medium

bcy79 equivalent

Abstract: 2N3053 equivalent 2N929 bcy78 equivalent 2N2905a equivalent f025 2N930 BAW63 BAW63A BFS36A
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A

F B0347

Abstract: b0349 BC184LB B0679 35S20 BDX330 B0242c f b0349 B0346 BD370-6
Contextual Info: Pro Electron Series in o PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET o Type No. BC107 BC107A Can Styl« TO-18 TO-18 VCES* v CBO (VI M in 50 50 v CEO (V) M in 45 45 v EB0 (V) M in 6 6 •c e s * 'CBO a InA) Max 15* 15* V CB IV) 50 50 H rh Ne 1 kH z *