BUX39 Search Results

RCA 619

Abstract: BUX39 RCA Solid State Power Transistor
Contextual Info: G E SOLI» STATE 3875081 G E SOLID STATE •üï DE”!3fl7S0fll □D17t.l3 ^ | ~ 01E 1761 3 33 3 Pro Electron Power Transistors _ _ BUX39 File Num ber 1211 High-Current, High-Speed, High-Power

BUX39

Abstract: transistor 110v
Contextual Info: SILICON EPITAXIAL NPN TRANSISTOR BUX39 • High Current Capability. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

Contextual Info: SILICON EPITAXIAL NPN TRANSISTOR BUX39 • High Current Capability. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

Contextual Info: ^Emi-C.onaueto'i iJ-^ioaucti, Ona. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUX39 25,15(0,99) 26.67(1,05) 6.3S (0.25) 9.15(0.36) 10.67 (0.42) 11.10(0.44) 1.52(0.06) 3.43(0.135) HIGH CURRENT

bux39

Contextual Info: NPN BUX39 HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR The BUX39 is silicon multiepitaxial planar NPN transistor in Jedec TO-3. They are intended for use in switching and linear applications in military and industrial equipment. ABSOLUTE MAXIMUM RATINGS

BUX39

Contextual Info: BUX39 POWER TRANSISTORS 30A, 120V, Fast Switching, Silicon NPN Mesa FEATURES DESCRIPTION • Collector-Base Voltage: up to 120V • DC Collector Current = 30A • Low V c e s a t = 0.75V Max. @ 15A These glass passivated power transistors com bine fast-switching, low saturation

BUX39

Abstract: 1545B
Contextual Info: BUX39 NPN POWER TRANSISTOR High Speed, High Current and High Power Applications DIM A B C D E F G H J K L M MIN MAX 6,35 0,96 29,90 10,69 39,37 22,22 8,50 1.09 1,77 30,4 11,18 5,20 16,64 11,15 3,84 5,72 17,15 12,25 26,67 4,19 - - ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter

BUX39

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX39 DESCRIPTION •Low Collector Saturation Voltage·High Switching Speed ·High Current Current Capability APPLICATIONS ·Designed for switching-control amplifiers, power gates,

bux39

Abstract: 12B20B
Contextual Info: File Number 1211 BUX39 High-Current, High-Speed, High-Power Silicon N-P-N Planar Transistors For Switching and Amplifier Applications in Industrial and Commercial Service Features: • M aximum area-of-operation curves for dc and pulse operation - lan limit

Contextual Info: File Num ber 1211 HARRIS SEMICONU SECTOR BUX39 SbE , . M3a22?1 High-Current, High-Speed, High-Power Silicon N-P-N Planar Transistors 1JQ ^ 7 ^ 3 3 -/ 3 For Switching and Amplifier Applications in Industrial and Commercial Service Features: • M aximum area-of-operation curves fo r dc and pulse operation - kn limit

BUX39

Contextual Info: SEME BUX39 LAB MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) FEATURES 1 2 22.23 (0.875) max. 0.97 (0.060)

bux39

Contextual Info: SavantIC Semiconductor Product Specification BUX39 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current ,high speed APPLICATIONS ·For switching amplifiers,power gates, switching regulators,switching circuits converters,inverters and control circuits

transistor BUX 48

Abstract: transistor bux 39 BUX 39 BUX39 bux c tca 761
Contextual Info: *BUX39 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED MESA TR A N S IS T O R S IL IC IU M NPN, M ESA T R IP L E D IF F U S E ^ P r e fe rr e d device • D is p o s itif re co m m a n d é High speed, high current, high power transistor Transistor de puissance rapide, f o r t c o u ra n t

BUX69

Abstract: BUX23 BUX37 BUX55 BUX25 BUX80 BUX24 BUX26 BUX27 BUX28
Contextual Info: 0133107 DDDDMSb T17 • SMLB MAE D SEMELABI SEMELAB BUX23 BUX24 BUX25 BUX26 BUX27 BUX28 BUX29 BUX34 BUX348 BUX348A BUX348APF BUX348CPF BUX348PF BUX37 BUX39 BUX40 BUX41 BUX41N BUX42 BUX43 BUX44 BUX45 BUX46 BUX47 BUX47A BUX48 BUX48A BUX49 BUX50 BUX51 BUX52 BUX53

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

BUT36

Abstract: BUT14 BUT35 mj11016 transistors but35 2N5885 MOTOROLA BUS98 2N5883 2N5884 2N5885
Contextual Info: POWER TRANSISTORS — BIPOLAR METAL continued TO-2Q4AA (FORMERLY TO-3) (continued) R esistive S w itching h lcCont VcEO (sus) Amps Max Volts Min 24 1000 25 60 2N5885 2N5883 80 2N5886 2N5884 2N6436 100 2N6338 120 2N6339 125 BUV10 BUX10 28 30 50 @ lc MHZ Watts

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

mpsu57 cross

Contextual Info: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s tf ps ps Max Max MHz Min Pd (Case) Watts @ 25°C h ^FE Min/Max @ lc Amp MPSU60

20N15

Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Contextual Info: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.

tic 1260 scr texas

Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
Contextual Info: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.

MJ1000

Abstract: mj2955
Contextual Info: 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR_ NDUCTOR _ 82D 8 2 D 0 0 05 4 ADVANCED S E M I CO ND UCTOR "flS DE | 0 2 S a B S M □□00D5M 3 D 7% D T " 3 3 ~0 f T SILICON! _ ,_ _— TRAftSSISTOUS Pd

DK53

Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
Contextual Info: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240