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    CLD31 Price and Stock

    OMRON Industrial Automation E3C-LD31-2M

    SENSOR REFLECTVE 1M HEAD DIFFUSE
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    DigiKey E3C-LD31-2M Bulk 1
    • 1 $698.94
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    OMRON Corporation E3C-LD31 2M

    E3C SENSOR HEAD W/AREA BEAM - Bulk (Alt: E3CLD312M)
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    Avnet Americas E3C-LD31 2M Bulk 1
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    OMRON Corporation E3C-LD31-2M

    Photoelectric Sensors Diff Refl Area focus Sensor head
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    Mouser Electronics E3C-LD31-2M
    • 1 $625.56
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    OMRON Industrial Automation E3CLD312M

    E3C Sensor Head W/Area Beam |Omron Industrial Automation E3CLD312M
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    Newark E3CLD312M Bulk 1
    • 1 $883.03
    • 10 $794.73
    • 100 $725.01
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    Master Electronics E3CLD312M
    • 1 $694.72
    • 10 $656.37
    • 100 $656.37
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    Eaton Cutler-Hammer CLD3125T57WPN

    Cld 3P 125A Optim 550 Lsig Bkr W/Ick550 Pwrnet Kit |Eaton Cutler Hammer CLD3125T57WPN
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    Newark CLD3125T57WPN Bulk 1
    • 1 $20661.54
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    Onlinecomponents.com CLD3125T57WPN
    • 1 $15652.26
    • 10 $15186.21
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    Find more CLD31 price and stock on Findchips.com

    CLD31 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CLD31 Clairex Electronics Silicon Planar Photovoltiac Diodes Scan PDF
    CLD31 Clairex Electronics Silicon Planar Photovoltiac Diodes Scan PDF
    CLD31 Clairex Electronics 150 mA, silicon planar photovoltiac diode Scan PDF
    CLD31BB Clairex Electronics Silicon Planar Photovoltiac Diodes Scan PDF
    CLD31BB Clairex Electronics 150 mA, silicon planar photovoltiac diode Scan PDF
    CLD31BB Clairex Electronics Silicon Planar Photovoltiac Diodes Scan PDF

    CLD31 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Alternate Source/ Second Source Photodiodes VTD31AAH CLD31AA INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of


    Original     		PDF VTD31AAH CLD31AA

    VTD31AAH

    Abstract: CLD31AA
    Text: Alternate Source/ Second Source Photodiodes VTD31AAH CLD31AA INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of


    Original     		PDF VTD31AAH CLD31AA VTD31AAH

    ceramic photodiode case 13

    Abstract: CLD31AA VTD31AA
    Text: Alternate Source/ Second Source Photodiodes VTD31AA CLD31AA INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of


    Original     		PDF VTD31AA CLD31AA ceramic photodiode case 13 VTD31AA

    S1723-04

    Abstract: BPW34 application VTD34 BPW34 BPW34 application note SFH206K BPW34F SFH205 VTD205 VTD205K
    Text: Alternate Source/ Second Source Photodiodes VTD31AA CLD31AA INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of


    Original     		PDF VTD31AA CLD31AA S1723-04 BPW34 application VTD34 BPW34 BPW34 application note SFH206K BPW34F SFH205 VTD205 VTD205K

    LD3600

    Abstract: Eaton rgc320032e HFD3225 Eaton WESTINGHOUSE scr LS CIRCUIT BREAKERS ld2500 Cutler-Hammer Digitrip RMS 310 trip unit digitrip 310 time curve Digitrip OPTIM 1050 HMCP030H1
    Text: Molded Case Circuit Breakers Series G Circuit Breakers 2.1 Introduction Product Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Typical Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF V4-T2-434 CA08100005Eâ V4-T2-407 V4-T2-408 V4-T2-413 V4-T2-415 V4-T2-421 V4-T2-425 V4-T2-429 V4-T2-431 LD3600 Eaton rgc320032e HFD3225 Eaton WESTINGHOUSE scr LS CIRCUIT BREAKERS ld2500 Cutler-Hammer Digitrip RMS 310 trip unit digitrip 310 time curve Digitrip OPTIM 1050 HMCP030H1

    337-Pin

    Abstract: "ESP" F0412
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-22115-3E ASSP IPsec Engine High-Speed IPsec Processing Engine MB86978 • DESCRIPTION MB86978 is IPsec accelerator engine of Inline Architecture. Once setup with appropriate parameters, the device can perform bi-directional 100 Mbps IPsec processing at full wire speed.


    Original     		PDF DS04-22115-3E MB86978 MB86978 IEEE802 10/100BASE-T/TX, 337-pin 288-pin BGA-337P-M02 F0412 "ESP" F0412

    B3370

    Abstract: F0511 BGA337 337P SAS controller chip HMAC-MD5-96 BGA288 "ESP"
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-22115-4E ASSP IPsec Engine High-Speed IPsec Processing Engine MB86978A • DESCRIPTION MB86978A is IPsec accelerator engine of Inline Architecture. Once setup with appropriate parameters, the device can perform bi-directional 100 Mbps IPsec processing at full wire speed.


    Original     		PDF DS04-22115-4E MB86978A MB86978A IEEE802 10/100BASE-T/TX, 337-pin 288-pin F0511 B3370 F0511 BGA337 337P SAS controller chip HMAC-MD5-96 BGA288 "ESP"

    B3370

    Abstract: MB86978 HMAC-MD5-96 "ESP" BGA337
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-22115-2E ASSP IPsec Engine High-Speed IPsec Processing Engine MB86978 • DESCRIPTION MB86978 is IPsec accelerator engine of Inline Architecture. Once setup with appropriate parameters, the device can perform bi-directional 100 Mbps IPsec processing at full wire speed.


    Original     		PDF DS04-22115-2E MB86978 MB86978 IEEE802 10/100BASE-T/TX, 337-pin 288-pin F0408 B3370 HMAC-MD5-96 "ESP" BGA337

    CLD31

    Abstract: CLD31BB CLD56 CLD56BB CLD 100 Senisys AAA01
    Text: MOE T> E3 3M«n73A OOOOSTO M ESSENI 7 FASCO INDS/ SENISYS -^//-5/ -4 CLD31 CLD56 CLD31BB CLD56BB Product Data •325 01A. M . ±4t« ,170 t Silicon Planar Photovoltiac Diodes —1 •*— .2 0 0 ^ — s. / — CATHOŒ CATHO LONG LEAD 3 6 0 DlA., CLD 31 C LD 31B B


    OCR Scan     		PDF CLD31 CLD56 CLD31BB CLD56BB CLD31V. CLD56BB CLD 100 Senisys AAA01

    cm 8600 c

    Abstract: cm 8600 31BB CLD31 CLD31BB CLD56 CLD56BB
    Text: CLD31 Product Data CLD56 CLD31BB CLD56BB Silicon Planar Photovoltiac Diodes l .310 1 ^—¿065 M AX. f = ' tff r ^ CATMOOE LONG LEAD C L D 31 C LD 31BB GENERAL DESCRIPTIO N — The CLD Series of Photo­ diodes is specifically designed to optimize Photovoltaic


    OCR Scan     		PDF CLD31 CLD56 CLD31BB CLD56BB CLD31V. cm 8600 c cm 8600 31BB CLD56BB

    Untitled

    Abstract: No abstract text available
    Text: L»OE D Tf E3 345573.5 00DG550 4 E3SENI 7 ^ /- 5 / FASCO INDS/ SENISYS Product Data -4 CLD31 CLD56 CLD31BB CLD56BB s i Silicon Planar Photovoltiac Diodes CLD 31 CLD31BB GENERAL DESCRIPTION — The CLD Series of Photo­ diodes is specifically designed to optimize Photovoltaic


    OCR Scan     		PDF 00DG550 CLD31 CLD56 CLD31BB CLD56BB CLD31V.

    Untitled

    Abstract: No abstract text available
    Text: Product Data CLD31 CLD56 CLD31BB CLD56BB r - , 0 6 5 MAX, Silicon Planar Photovoltiac Diodes iA in. fT H h—.200 s. A j CATHOOE LONG LEAD - *3 60 DIA. CLD 31 CLD31BB GENERAL DESCRIPTION — The CLD Series of Photo­ diodes is specifically designed to optimize Photovoltaic


    OCR Scan     		PDF CLD31 CLD56 CLD31BB CLD56BB

    Untitled

    Abstract: No abstract text available
    Text: SbE D 3G3GtiDci D D D lin Ü2T • VCT VTD31, V T D 3 1 A A VTP Process Photodiodes CLD31, 31AA INDUSTRY EQUIVALENT E G & G VAC TE C PACKAGE D IM EN SIO N S inch (mm) CASE 13 PRODUCT DESCRIPTION CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2) Planar silicon photodiode mounted on


    OCR Scan     		PDF VTD31, CLD31, VTD31 VTD31AA

    J265

    Abstract: CLD31 CLD31BB CLD56 CLD56BB ir source Clairex Electronics CLD31
    Text: 214S?n 11E D CLAIREX ELECTRONICS DIV 0Q0G743 S T-W/-5/ Product Data CLD31 CLD56 CLD31BB CLD56BB p065M AX. Silicon Planar Photovoltiac Diodes 2 MM, JL-T v / “ CATHOOC G fc CLD 31 CLD31BB GENERAL DESCRIPTIO N — The CLD Series of Photo­ diodes is specifically designed to optimize Photovoltaic


    OCR Scan     		PDF 0G0Q743 CLD31 CLD56 CLD31BB CLD56BB CLD31V. 0G0G74M H928M" J265 CLD56BB ir source Clairex Electronics CLD31

    F65510

    Abstract: sharp lm64p80 Citizen G6481L-FF Jl-23 CPU-86 I46E8 "VGA Video Controller" 100pin qfp 65510 VGA chips 65520 flat panel vga LJ sharp EL display
    Text: • •• •• •• •• •• • v-nira. 65510 Flat Panel VGA Controller Highly integrated Flat Panel controller • Separate Address and Data buses • Direct support for Dual or Single Scan panels • Single clock source • 100-pin package CPU activity indicated for orderly power down


    OCR Scan     		PDF 100-pin 256Kxl6 256Kx4 DO-15 F65510 F65510R F65510 sharp lm64p80 Citizen G6481L-FF Jl-23 CPU-86 I46E8 "VGA Video Controller" 100pin qfp 65510 VGA chips 65520 flat panel vga LJ sharp EL display

    H0A0872-n55

    Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
    Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1


    OCR Scan     		PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12

    TIL149

    Abstract: HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W
    Text: ¿£i^±=<.-=is=a. L FASCO INDS/ Part Number SENISYS Replaced By 40E D 3411736 ^ Part Number Replaces ÜQQ1 3 3 Ô By CLI800 . S-870-T55 C L I8 0 0 A . S-875-T55 C L I8 0 0 M . S-870-N55 C L I8 0 0 M A .S-875-N55


    OCR Scan     		PDF GQ133Ã CLA60. C-101-C CLA60AA C-101-B CLA60AB C-101-A CLA65. C-102 CLA65AA TIL149 HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W

    UPD1962

    Abstract: UPD1963 UPD1963C UPD1962C Q 4.194 304
    Text: N E C ELECTRONICS INC 75 NEC De | b457SES □QGci Q 2 7 û T 0 T -5 Ò -2 -3 P R E LU M IN A R Y S P E C IF IC A T IO N MOS DIGITAL INTEGRATED CIRCUITS E LEC T R O N DEVICE / / P D 1 9 6 2 C , ^ P D 1 9 6 3 C CMOS MSI FOR CRYSTAL-CONTROLLED CLOCK SILICON COMPLEMENTARY MOS


    OCR Scan     		PDF b457SES uPD1962C uPD1963C fiPD1962C PD1963C 427S25 50-c2-5 UPD1962 UPD1963 Q 4.194 304

    KT853

    Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
    Text: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN


    OCR Scan     		PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 3N24x 24xTX KT853 KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B