CY100 Search Results

SSC 9101

Abstract: c494 223A10
Contextual Info: EbE D CYPRESS mg • ssa^bba 0004401 y ■ SEMICONDUCTOR CYPRESS . : PRELIM INARY i - •••••• ^ SEMICONDUCTOR T ^ U S -iO CY1E494 JÇŸÎ5SÎÎ1 CY100E494 ■ ■■ . 16,384 x 4 ECL Static RAM • Open em itter output for ease of memory expansion

Contextual Info: _ _ CY10E470 CY100E470 s i CYPRESS ^S W SEMICONDUCTOR . 4K x l E C L Features Functional Description • 4096 x 1—bit organization • High speed/low power tAA —5 ns T h e Cypress CY 10E470 an d CY 100E470 are E C L R A M s designed fo r scratch pad,

Contextual Info: ^ CY10E422 CY100E422 » ss f^YPPP’^c; • 256 x 4-bit organization • Ultra high speed/standard power — tAA = 3.5 ns — U : e = 220 niA • Low-power version — tAA = 5 ns — I e e " 150 inA • Both 10KH/10K- and 100K-compatible I/O versions • 10K/10KH military version

Contextual Info: CY10E470 CY100E470 s s s s s js CYPRESS S S ' # ' SEMICONDUCTOR e 4096 x 1 ECL Static RAM Features Functional Description • 4096 x 1 - b it organization • High speed/low power — tAA = 5 ns — I e e = 200 mA • Both 10K- an d 100K-compatible ver­ sions

Contextual Info: CY101E484 CY10E484 CY100E484 .1 ^ CYPRESS SEMICONDUCTOR Features • 4096 x 4-bit organization • Ultra high speed/standard power — tAA = 4 ,5 ns — I e e ~ 320 mA • Low-power version — tAA = 7,10 ns — Iee = 200 mA • Both 10KH/10K- and 100K-compatible I/O versions

Contextual Info: CY10E494 CY100E494 CY101E494 CYPRESS SEMICONDUCTOR 16,384x4 ECL Static RAM Features • Capable o f w ithstanding >2001V E SD • 16,384 x 4 bits organization • Open emitter output for ease of memory expansion • Ultra high speed/standard power • Industry-standard pinout

CY10E470

Abstract: CY10E470-7DC 013A4
Contextual Info: CY10E470 CY100E470 g CYPRESS SEMICONDUCTOR 4096 x 1 ECL Static RAM Features Functional Description • 40% x 1—bit organization • High speed/low power The Cypress CY10E470 and CY100E470 are ECL RAMs designed for scratch pad, control, and buffer storage applications.

K74 PACKAGE DIAGRAM

Abstract: IR 10e 1h
Contextual Info: = ^~' _ = p r e l im in a r y . ^ SEMICONDUCTOR Features • CY10E494 CY100E494 CY101E494 16,384 x 4 bits organization • Ultra high speed/standard power — tAA = 7 ns — I f E — 180 mA 16,384 x 4 ECL Static RAM • Open emitter output for ease of

EME-6300H

Abstract: sumitomo epoxy 6300h D284 J28S yc 504
Contextual Info: Reliability Report April 1994, QTP# 94183, Rev. 1.0 4K x 4 ECL STATIC RAM MARKETING PART NUMBERS CY10E484/CY10E484L CY100E484/CY100E484L CY101E484/CY101E484L CYPRESS SEMICONDUCTOR PAGE 2 PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part

Contextual Info: CY10E301 CY100E301 CYPRESS T~'~ — '— • - —— - - —1= SEMICONDUCTOR Combinatorial ECL16P8 Programmable Logic Device Features Functional Description • Standard 16P8 pinout and architecture — 16 inputs, 8 outputs — User-programmable output polarity

Contextual Info: CY101E484 CY10E484 CY100E484 CYPRESS SEMICONDUCTOR Features • Open emitter output for ease of memory expansion • 4096 x 4-bit organization • 4K x 4 ECL Static RAM • Industry-standard pinout Ultra high speed/standard power — t AA = 4, 5 ns Functional Description

Contextual Info: CY10E302 CY100E302 CYPRESS SEMICONDUCTOR Combinatorial ECL 16P4 Programmable Logic Device Features Functional Description • Standard 16P4 pinout and architecture — 16 inputs, 4 outputs Cypress S em iconductor’s PLD family offers the u ser the highest level o f perform ­

Contextual Info: CY10E470 CY100E470 CYPRESS SEMICONDUCTOR 4096 x 1 ECL Static RAM Features Functional Description • 4096 x 1-b it organization T h e Cypress CY10E470 and CY100E470 are E C L R A M s designed for scratch pad, control, and buffer storage applications. B oth p arts are fully decoded random ac­

Contextual Info: = ~ =~ -= t ~ CY10E301 CY100E301 ß SEMICONDUCTOR Combinatorial ECL 16P4 Programmable Logic Device F eatures F unctional D escription • Standard 16P8 pinout and architecture — 16 inputs» 8 outputs Cypress Semiconductor’s PLD family offers the user the highest level of perform­

28D03

Abstract: CY10E484 HT12 WA 934 CY10E484L CY10E484L7JC decoder HT12
Contextual Info: CY101E484 CY10E484 CY100E484 CYPRESS SEMICONDUCTOR 4K x 4 ECL Static RAM • Open emitter output for ease of memory expansion • Industry-standard pinout Features • 4096 x 4-bit organization • Ultra high speed/standard power Functional Description — U a = 4, 5 n s

immobilizer bosch

Abstract: IC BOSCH ISO 9141 driver bosch 21 pin immobilizer chip bosch Bosch microcontroller bosch automotive transistor IC BOSCH spi bosch ic immobilizer receiver bosch integrated circuit BOSCH
Contextual Info: preliminary CY100 Companion IC with 5 V ADC Eight channel 10 bit A / D converter with 5 V interface for 3.3 V or 2.5 V controllers for automotive, truck and 42 V applications FEATURES • • Eight channel 10 bit A / D converter Approved ISO interface , slew rate limitation,

Contextual Info: CY101E484 CY10E484 CY100E484 r CYPRESS SEMICONDUCTOR Features 4K x 4 ECL Static RAM • Open emitter output for ease o f memory expansion 4096 x 4-bit organization • Industry-standard pinout Ultra high speed/standard power — tAA = 4, 5 ns — Ie e = 320 III A

C-484

Abstract: 100A484 DA11 E484 CI 4096
Contextual Info: _ 2tE D • aSfilbba D D G M M ñ G 4 CY1E484 CY10E484 CY100E484 CYPRESS SEMICONDUCTOR 5£v ADVANCED INFORMATION :.M^ s x = s r W M cyp ress 'T^-Zb-O Z SEMICONDUCTOR 4096 x 4 ECL Static RAM • O pen e m itte r o u tp u t fo r e ase of m em o ry exp an sio n

Contextual Info: CY10E302 CY100E302 CYPRESS SEMICONDUCTOR Combinatorial ECL16P4 Programmable Logic Device Features Functional Description • Standard 16P4 pinout and architecture — 16 inputs, 4 outputs — User-programmable output polarity • Ultra high speed/standard power

1r 10e

Abstract: N25U
Contextual Info: CY10E494 CY100E494 CY101E494 " 'Y P P F Ç Ç 1 6 ,3 8 4 x 4 ECL Static RAM SEMICONDUCTOR Features • 16,384 x 4 bits organization • Ultra high speed/standard power — tAA = 7 n s — IEK = 180 mA • Low-power version — tAA = 12 ns — I e e = Î35 mA

Contextual Info: CY10E422 CY100E422 i s ^ Y p p p c ;< ^ • ■ ■ ^ s \ # f SEMICONDUCTOR Features • Open em itter output for ease of memory expansion • Ultra high speed/standard power — tAA = 3.5 ns • Industry-standard pinout — Iee = 220 mA Functional Description

10E474

Contextual Info: CY10E474 CY100E474 CYPRESS SEMICONDUCTOR Features • On-chip voltage compensation for im­ proved noise margin • 1024 x 4-bit organization • Ultra high speed/standard power — *AA = 3.5 ns • Open emitter output for ease of memory expansion • Industry-standard pinout

Contextual Info: CY10E470 _ CY100E470 SEMICONDUCTOR 4K x 1 ECL Static RAM Features Functional Description • 4096 x 1—bit organization T h e C ypress CY 10E470 and CY 100E470 are E C L R A M s designed for scratch pad, control, an d b u ffer storage applications.

Contextual Info: CY10E474 CY100E474 CYPRESS SEMICONDUCTOR • 1024 x 4 - b it organization • Ultra high speed/standard power — 1 \ \ = 3.5 ns — Iee = 275 mA • Low-power version — Iaa = 5 ns — Iee = 190 mA • Both 10KH/10K- and 100K-compatible I/O versions • 10K/10KH military version