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    CY7C197 Price and Stock

    Rochester Electronics LLC CY7C197-25VCT

    IC SRAM 256KBIT PARALLEL 24SOJ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY7C197-25VCT Bulk 34,567 55
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    Rochester Electronics LLC CY7C197-20VC

    IC SRAM 256KBIT PARALLEL 24SOJ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY7C197-20VC Bulk 18,577 55
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    Rochester Electronics LLC CY7C197-45VC

    IC SRAM 256KBIT PARALLEL 24SOJ
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    DigiKey CY7C197-45VC Bulk 11,327 110
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    Rochester Electronics LLC CY7C197-25VC

    IC SRAM 256KBIT PARALLEL 24SOJ
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    DigiKey CY7C197-25VC Bulk 8,414 55
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    • 1000 $5.53
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    Rochester Electronics LLC CY7C197-35VC

    IC SRAM 256KBIT PARALLEL 24SOJ
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    DigiKey CY7C197-35VC Bulk 4,248 55
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    Find more CY7C197 price and stock on Findchips.com

    CY7C197 Datasheets (120)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CY7C197 Cypress Semiconductor 256K x 1 Static RAM Original PDF
    CY7C197 Cypress Semiconductor 256K x 1 Static RAM Original PDF
    CY7C197-12DC Cypress Semiconductor 256K x 1 Static R/W RAM Scan PDF
    CY7C197-12LC Cypress Semiconductor 256K x 1 Static R/W RAM Scan PDF
    CY7C197-12PC Cypress Semiconductor 256K x 1 Static RAM Original PDF
    CY7C197-12PC Cypress Semiconductor 256K x 1 Static RAM Original PDF
    CY7C197-12PC Cypress Semiconductor 256K x 1 Static RAM Scan PDF
    CY7C197-12PC Cypress Semiconductor 256K x 1 Static R/W RAM Scan PDF
    CY7C197-12VC Cypress Semiconductor 256K x 1 Static RAM Original PDF
    CY7C197-12VC Cypress Semiconductor 256K x 1 Static RAM Original PDF
    CY7C197-12VC Cypress Semiconductor 256K x 1 Static RAM Scan PDF
    CY7C197-12VC Cypress Semiconductor 256K x 1 Static R/W RAM Scan PDF
    CY7C197-12VCT Cypress Semiconductor 256K x 1 Static RAM Original PDF
    CY7C197-15DC Cypress Semiconductor 256K x 1 Static R/W RAM Scan PDF
    CY7C197-15DMB Cypress Semiconductor 256K x 1 Static RAM Original PDF
    CY7C197-15DMB Cypress Semiconductor 256K x 1 Static R/W RAM Scan PDF
    CY7C197-15DMB Cypress Semiconductor 256K x 1 Static RAM Scan PDF
    CY7C197-15KMB Cypress Semiconductor 256K x 1 Static R/W RAM Scan PDF
    CY7C197-15LC Cypress Semiconductor 256K x 1 Static R/W RAM Scan PDF
    CY7C197-15LMB Cypress Semiconductor 256K x 1 Static R/W RAM Scan PDF

    CY7C197 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY7C197

    Abstract: No abstract text available
    Text: CY7C197 256Kx1 Static RAM Features vided by an active LOW chip enable CE and three-state drivers. The CY7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns Writing to the device is accomplished when the chip enable


    Original     		PDF CY7C197 256Kx1 CY7C197

    Untitled

    Abstract: No abstract text available
    Text: CY7C197BN 256-Kb 256 K x 1 Static RAM 256-Kb (256 K × 1) Static RAM Features General Description [1] • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ CMOS for optimum speed and power ■ TTL compatible inputs and outputs


    Original     		PDF CY7C197BN 256-Kb CY7C197BN 24-pin

    Untitled

    Abstract: No abstract text available
    Text: CY7C197BN 256-Kb 256 K x 1 Static RAM 256-Kb (256 K × 1) Static RAM General Description [1] Features • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ CMOS for optimum speed and power ■ TTL compatible inputs and outputs


    Original     		PDF CY7C197BN 256-Kb 24-pin CY7C197BN

    CY7C197

    Abstract: C1971
    Text: 97 CY7C197 256Kx1 Static RAM Features vided by an active LOW Chip Enable CE and three-state drivers. The CY7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns Writing to the device is accomplished when the Chip Enable


    Original     		PDF CY7C197 256Kx1 CY7C197 C1971

    CY7C197

    Abstract: No abstract text available
    Text: CY7C197 256K x 1 Static RAM Features D D D D D D The CY7C197 is a highĆperformance CMOS static RAM organized as 256K words by 1 bit. Easy memory expansion is provided by an active LOW chip enable CE and threeĆstate drivers. The CY7C197 has an automatic powerĆdown


    Original     		PDF CY7C197 CY7C197

    Untitled

    Abstract: No abstract text available
    Text: CY7C197N 256 K x 1 Static RAM 256 K × 1 Static RAM Features Functional Description • High speed ❐ 25 ns ■ CMOS for optimum speed/power ■ Low active power ❐ 880 mW The CY7C197N is a high-performance CMOS static RAM organized as 256 K words by 1 bit. Easy memory expansion is


    Original     		PDF CY7C197N CY7C197N

    Untitled

    Abstract: No abstract text available
    Text: CY7C197N 256Kx1 Static RAM Features Functional Description • High speed The CY7C197N is a high-performance CMOS static RAM organized as 256K words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable CE and three-state drivers. The CY7C197N has an automatic power-down


    Original     		PDF CY7C197N 256Kx1 CY7C197N

    CY7C197N

    Abstract: CY7C197N-25PXC CY7C197N-45PXC
    Text: CY7C197N 256Kx1 Static RAM Features Functional Description • High speed The CY7C197N is a high-performance CMOS static RAM organized as 256K words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable CE and three-state drivers. The CY7C197N has an automatic power-down


    Original     		PDF CY7C197N 256Kx1 CY7C197N CY7C197N-25PXC CY7C197N-45PXC

    CY7C197BN

    Abstract: CY7C197BN-12VC CY7C197BN-15VC CY7C197BN-25PC TAA 691
    Text: CY7C197BN 256 Kb 256K x 1 Static RAM General Description [1] Features • • • • • Fast access time: 12 ns Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) CMOS for optimum speed and power TTL compatible inputs and outputs Available in 24-lead DIP and 24-lead SOJ


    Original     		PDF CY7C197BN 24-lead CY7C197BN CY7C197BN-12VC CY7C197BN-15VC CY7C197BN-25PC TAA 691

    mega 329

    Abstract: No abstract text available
    Text: CY7C197N 256 K x 1 Static RAM 256 K × 1 Static RAM Features Functional Description • High speed ❐ 25 ns ■ CMOS for optimum speed/power ■ Low active power ❐ 880 mW The CY7C197N is a high-performance CMOS static RAM organized as 256 K words by 1 bit. Easy memory expansion is


    Original     		PDF CY7C197N CY7C197N mega 329

    C1974

    Abstract: c1971 C1972 CY7C197 C1973 C1975
    Text: CY7C197 256Kx1 Static RAM Features vided by an active LOW Chip Enable CE and three-state drivers. The CY7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns Writing to the device is accomplished when the Chip Enable


    Original     		PDF CY7C197 256Kx1 CY7C197 300-Mil) CY7C197-15VC CY7C197-20PC 24-Lead CY7C197-25PC C1974 c1971 C1972 C1973 C1975

    Untitled

    Abstract: No abstract text available
    Text: CY7C197BN 256-Kb 256 K x 1 Static RAM 256-Kb (256 K × 1) Static RAM Features General Description [1] • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ CMOS for optimum speed and power ■ TTL compatible inputs and outputs


    Original     		PDF CY7C197BN 256-Kb CY7C197BN 24-pin

    CY7C197B

    Abstract: CY7C197B-12VC CY7C197B-25PC
    Text: CY7C197B 256 Kb 256K x 1 Static RAM General Description1 Features The CY7C197B is a high-performance CMOS Asynchronous SRAM organized as 256K x 1 bits that supports an asynchronous memory interface. The device features an automatic power-down feature that significantly reduces


    Original     		PDF CY7C197B CY7C197B CY7C197B-12VC CY7C197B-25PC

    Untitled

    Abstract: No abstract text available
    Text: CY7C197BN 256-Kbit 256 K x 1 Static RAM 256-Kb (256 K × 1) Static RAM Features General Description • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ CMOS for optimum speed and power ■ TTL compatible inputs and outputs


    Original     		PDF CY7C197BN 256-Kbit 256-Kb 24-pin CY7C197BN

    MOS 4532

    Abstract: CY7C197 CY7C199 JESD22 64K X 4 SRAM
    Text: Qualification Report December 1996, QTP# 96294, Version 1.2 256K SRAM - RAM28 TECHNOLOGY MARKETING PART NUMBER DEVICE DESCRIPTION CY7C197 256K x 1 Static RAM PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part


    Original     		PDF RAM28 CY7C197 CY7C199 28-pin, 300-mil 7C197C C199-VC 85C/85 CY7C199-VC MOS 4532 CY7C197 CY7C199 JESD22 64K X 4 SRAM

    Untitled

    Abstract: No abstract text available
    Text: CY7C197N 256 K x 1 Static RAM 256 K × 1 Static RAM Features Functional Description • High speed ❐ 25 ns ■ CMOS for optimum speed/power ■ Low active power ❐ 880 mW The CY7C197N is a high-performance CMOS static RAM organized as 256 K words by 1 bit. Easy memory expansion is


    Original     		PDF CY7C197N CY7C197N

    Untitled

    Abstract: No abstract text available
    Text: CY7C197 256Kx 1 Static RAM Features vided by an active LOW chip enable CE and three-state driv­ ers. The CY7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns Writing to the device is accomplished when the chip enable


    OCR Scan     		PDF CY7C197 256Kx CY7C197

    Untitled

    Abstract: No abstract text available
    Text: CY7C197 CYPRESS SEMICONDUCTOR Features 2 5 6 K x l Static R/W RAM Functional Description High speed — 12 ns CMOS for optimum speed/power Low active power — 880 mW Low standby power — 220 mW TTL-compatible imputs and outputs Automatic power-down when


    OCR Scan     		PDF CY7C197 CY7C197

    7C197

    Abstract: No abstract text available
    Text: Data Sheet February 1992 , H &t Microelectronics ATT7C197 High-Speed CMOS SRAM 256 Kbit 256K x 1 , Separate I/O a t Features • High speed — 12 ns maximum access times ■ Plug-compatible with IDT71257 and CY7C197 ■ Automatic powerdown during long cycles


    OCR Scan     		PDF ATT7C197 IDT71257 CY7C197 24-pin, ATT7C197 -137MMOS DS90-120MMOS) 7C197

    p13ab

    Abstract: No abstract text available
    Text: .»•WMMlUAv. SS ^777777^^^^^"^ •WWWWWWWJK^' . v , '*v^ CY7C197 ÿfp?' 256Kx 1 Static RAM Features vided by an active LOW chip enable CE and three-state driv­ ers. The CY7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected.


    OCR Scan     		PDF CY7C197 256Kx CY7C197 p13ab

    7c197

    Abstract: No abstract text available
    Text: CY7C197 '/C Y P R E S S 256K x 1 Static RAM Features Functional Description • High speed — 12 ns • CMOS for optimum speed/power location specified on the address pins Ao through A n . The CY7C197 is a high-performance CMOS static RAM organized as 256K


    OCR Scan     		PDF CY7C197 CY7C197 7c197

    ZP101

    Abstract: C1971 CY7C197
    Text: CY7C197 ' / CYPR ESS 256K x 1 Static RAM Features Functional Description • High speed — 12 ns • CMOS for optimum speed/power • Low active power — 880 mW • Low standby power — 220 mW • TTL-compatible inputs and outputs • Automatic power-down when


    OCR Scan     		PDF CY7C197 256Kx CY7C197â 45DMB 24-Lead 300-Mil) 45LMB ZP101 C1971

    Untitled

    Abstract: No abstract text available
    Text: CY7C197 CYPRESS 2 5 6 K x l Static RAM Features Functional Description • lo c a tio n sp ecified o n th e a d d re ss p in s Ao th ro u g h A 17 . T h e C Y 7C 197 is a h ig h -p e rfo rm an ce C M O S s ta tic R A M o rg an ized as 256K w ords by 1 bit. E asy m e m o ry e x p a n sio n is


    OCR Scan     		PDF CY7C197 8-00078-L

    CY7C197

    Abstract: No abstract text available
    Text: CY7C197 V CYPRESS 256Kx1 Static RAM vided by an active LOW Chip Enable CE and three-state driv­ ers. The CY7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected. Features • High speed — 12 ns Writing to the device is accomplished when the Chip Enable


    OCR Scan     		PDF CY7C197 256Kx1 CY7C197 pin97-12PC 24-Lead 24-Lead 300-Mil) P13/P13A