7C197 Search Results

verilog for SRAM 512k word 16bit

Abstract: CY62512V CYM74P436 192-Macrocell 62128 sram 7C1350 Triton P54C palce16v8 programming guide 7C168A intel 16k 8bit RAM chip
Contextual Info: Product Selector Guide Static RAMs Organization/Density Density X1 X4 4K X8 X9 X16 X18 X32 X36 7C148 7C149 7C150 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195 7C199 7C1399/V 62256/V 62256V25 62256V18

cy3341

Abstract: 64K X 4 CACHE SRAM CY7C190 pasic380 cy7c189 palce22v10 programming guide palce16v8 programming algorithm STATIC RAM 6264 vhdl code for 8-bit parity checker 64x18 synchronous sram
Contextual Info: Product Selector Guide Static RAMs Organization/Density Density X1 X4 X4 SIO 7C147 2147 7C123 7C148 7C149 7C150 7C189 7C190 2148 2149 7C122 9122 93422 7C167A 7C168A 7C169A 7C170A 7C171A 7C172A 7C128A 7C187 7C164 7C166 7C161 7C162 7C185 6264 7C182 7C197 7C194

2M X 32 Bits 72-Pin Flash SO-DIMM

Abstract: AN2131QC Triton P54C SO-DIMM 72pin 32bit 5V 2M AN2131-DK001 AN2131SC vhdl code for pipelined matrix multiplication VIC068A user guide parallel interface ts vhdl 7C037
Contextual Info: GO TO WEB MAIN INDEX 3URGXFW 6HOHFWRU *XLGH Static RAMs Organization/Density Overview Density X1 X4 X8 X9 X16 X18 X32 X36 7C148 7C149 7C150 4 Kb 16 Kb 7C167A 7C168A 7C128A 6116 64 Kb to 72 Kb 7C187 7C164 7C166 7C185 6264 7C182 256 Kb to 288 Kb 7C197 7C194

L78112

Abstract: 19720
Contextual Info: _ 7C197 = W 'F SEMICONDUCTOR 256K x 1 Static R/W RAM Features Functional Description • Automatic power-down when deselected T he CY 7C197 is a high-perform ance C M O S static R A M organized as 256K w ords by 1 bit. Easy m em ory expansion is

Triton P54C

Abstract: cy7c37128 62128 SRAM adapter 48-pin TSOP CY7C37192 CYM74P436 CY3501A CY7C37512 MIB 30 Product Selector Guide
Contextual Info: Product Selector Guide Fast Static RAMs Organization/Density Density X1 X4 X4 SIO X8 4K 7C147 2147 7C123 7C148 7C149 7C150 2148 2149 7C122 9122 93422 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195

T41G

Contextual Info: 7C197 SEMICONDUCTOR 262,144 x 1 Static R/W RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed - 25 ns T h e C Y 7C197 is a high-perform ance C M O S static R A M organized as 262,144

CY7C197

Contextual Info: 7C197 256Kx1 Static RAM Features vided by an active LOW chip enable CE and three-state drivers. The 7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns Writing to the device is accomplished when the chip enable

CY7C197

Abstract: CV7C197
Contextual Info: MbE D n " T CYPRESS SEMICONDUCTOR Features Automatic power-down when deselected CMOS for optimum speed/power Highspeed — 20ns Low active power — 880 mW Low standlgr power — 220 mW TlX-compatible imputs and outputs Capable ofwithstanding greater than

Contextual Info: 7C197 256Kx 1 Static RAM Features vided by an active LOW chip enable CE and three-state driv­ ers. The 7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns Writing to the device is accomplished when the chip enable

ATPA

Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C

CY7C197

Abstract: C1971
Contextual Info: 97 7C197 256Kx1 Static RAM Features vided by an active LOW Chip Enable CE and three-state drivers. The 7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns Writing to the device is accomplished when the Chip Enable

CY7C197

Contextual Info: 7C197 256K x 1 Static RAM Features D D D D D D The 7C197 is a highĆperformance CMOS static RAM organized as 256K words by 1 bit. Easy memory expansion is provided by an active LOW chip enable CE and threeĆstate drivers. The 7C197 has an automatic powerĆdown

81c78

Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
Contextual Info: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M

Contextual Info: Data Sheet January 1992 Ü ^ A T & T Microelectronics 7C197 High-Speed CMOS SRAM 256 Kbit 256K x 1 , Separate I/O Features Low-power operation — Active: 210 mW typical at 45 ns — Standby: 500 nW typical • High speed— 12 ns maximum access times

MSM 6290

Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

7C197

Contextual Info: Data Sheet February 1992 , H &t Microelectronics 7C197 High-Speed CMOS SRAM 256 Kbit 256K x 1 , Separate I/O a t Features • High speed — 12 ns maximum access times ■ Plug-compatible with IDT71257 and 7C197 ■ Automatic powerdown during long cycles

p13ab

Contextual Info: .»•WMMlUAv. SS ^777777^^^^^"^ •WWWWWWWJK^' . v , '*v^ 7C197 ÿfp?' 256Kx 1 Static RAM Features vided by an active LOW chip enable CE and three-state driv­ ers. The 7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected.

Contextual Info: 7C197N 256 K x 1 Static RAM 256 K × 1 Static RAM Features Functional Description • High speed ❐ 25 ns ■ CMOS for optimum speed/power ■ Low active power ❐ 880 mW The 7C197N is a high-performance CMOS static RAM organized as 256 K words by 1 bit. Easy memory expansion is

EPM5128LC

Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C

Contextual Info: 7C197N 256Kx1 Static RAM Features Functional Description • High speed The 7C197N is a high-performance CMOS static RAM organized as 256K words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable CE and three-state drivers. The 7C197N has an automatic power-down

CY7C197N

Abstract: CY7C197N-25PXC CY7C197N-45PXC
Contextual Info: 7C197N 256Kx1 Static RAM Features Functional Description • High speed The 7C197N is a high-performance CMOS static RAM organized as 256K words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable CE and three-state drivers. The 7C197N has an automatic power-down

7805CT

Abstract: MOC5010 ip1717 UA741CN op amp TL081P LM3524N LM13080N 7824ct LM7915CK LM7905CK
Contextual Info: Master Designer Version 8.5 Component Library Reference Volume 2 October 1995 All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted, in any form or by any means-electronic, mechanical, photocopying, recording, or otherwise-without the prior

7c197

Contextual Info: 7C197 '/C Y P R E S S 256K x 1 Static RAM Features Functional Description • High speed — 12 ns • CMOS for optimum speed/power location specified on the address pins Ao through A n . The 7C197 is a high-performance CMOS static RAM organized as 256K

mega 329

Contextual Info: 7C197N 256 K x 1 Static RAM 256 K × 1 Static RAM Features Functional Description • High speed ❐ 25 ns ■ CMOS for optimum speed/power ■ Low active power ❐ 880 mW The 7C197N is a high-performance CMOS static RAM organized as 256 K words by 1 bit. Easy memory expansion is