Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    323G114 Search Results

    SF Impression Pixel

    323G114 Price and Stock

    Glenair Inc G9323G114NF7

    ADAPTER - Bulk (Alt: G9323G114NF7)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas G9323G114NF7 Bulk 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Glenair Inc G9323G114NF5

    ADAPTER - Bulk (Alt: G9323G114NF5)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas G9323G114NF5 Bulk 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    323G114 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D012

    Abstract: D019 D020 D023 EDI8F32128C t462
    Text: ELECTRONIC m DESIGNS INC SIE ]> • 323G114 a OGOlOTb 3=50 H E L D E D I8 F 3 2 1 2 8 C Etoctrenle DülQfMInc. High Speed Four Megabit SRAM Module MMMAm 128Kx32 Static RAM CMOS, High Speed Module Features The EDI8F32128C isa high speed4 megabitStatic RAM module organized as 128K words by 32 bits. This module is


    OCR Scan     		PDF 323G114 EDI8F32128C 128Kx32 EDI8F32128Cisahighspeed4megabitStatic 128Kx8 EDI8F32128C EDI8F32128C15MMC EDISF32128C20MMC EDI8F32128C25MMC D012 D019 D020 D023 t462

    Untitled

    Abstract: No abstract text available
    Text: ^EDI ELECTRONIC DESIGNS INC 30E D E l t e k o o le O t s l g n i I n c . . • 323G114 OOOQbTb Ö ■ EDI8F8257C/LP/P Commercial Two Megabit S R AM Module 256Kx8 Static R A M C M O S, Module Features The EDI8F8257C/LP/P is a 2 megabit CM OS Static RAM based on two 128Kx8 Static RAMs mounted on a


    OCR Scan     		PDF EDI8F8257C/LP/P 256Kx8 EDI8F8257C/LP/P 128Kx8 28Kx8 00007QQ T-46-23-14

    A14-A6

    Abstract: No abstract text available
    Text: ELECTRONIC D E S I G N S INC 3QE D • 323G114 OQQQSÖS T ■ EDI81256C/LP/P _ ß«olronle Dtilgnt Inc. High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS High Speed Monolithic , Features The EDI81256C/LP/P is a262,144bithighperformance, low power CMOS Static RAM organized as 256Kx1.


    OCR Scan     		PDF 323G114 EDI81256C/LP/P 256Kx1 EDI81256C/LP/P 144bithigh 256Kx1. MIL-STD-883, EDI81256CA A14-A6

    Untitled

    Abstract: No abstract text available
    Text: W D EDI5M32128C I ELECTRONIC DESIGNS IN C. High Performance Four Megabit EEPROM Module 128Kx32 CMOS ] l fl[ EEPROM Module Features The EDI5M32128C is a high speed, high perform­ ance, four megabit density EEPROM module organized as 128Kx32 bits. The module has four 128Kx8


    OCR Scan     		PDF EDI5M32128C 128Kx32 EDI5M32128C 128Kx8 1b-10 020x45Â

    Untitled

    Abstract: No abstract text available
    Text: M D \ ELECTRONIC QE9GN& N C . EDI7P16xxxA TA/CF A Features General Description Type II, Type 111 and Compact Flash packaging ATA Flash PC Cards Densities from 2MB to 220MB EDI's ATA Flash Memory PC Card series offers a full • Compact Flash - 2MB to 24MB


    OCR Scan     		PDF EDI7P16xxxA 220MB 110MB car04 EDI7P16xxxATA00Z EDI7P16xxxCFA00Z 175MB

    Untitled

    Abstract: No abstract text available
    Text: EDI88128C ELECTRONIC DESIGNS INC. High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88128C is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits. The device is also available as EDI88130C with an


    OCR Scan     		PDF EDI88128C 128Kx8 EDI88128C EDI88130C EDl88128LPandEDI88130LP, 88128C

    Untitled

    Abstract: No abstract text available
    Text: E L E C T R O N I C D E S I G N S I N C 71 3 2 3 D 1 1 4 □ □ □ □ □ 3 4 b T ' 13 " 2 7 EDH 51664-35/45 MILITARY 64K x 16 EEPROM ELECTRONIC DESIGNS INC. PINOUTS VSS A7 A8 A9 T h e 5 1 6 6 4 is a f u l l y b u f f e r e d 1M b i t E E P R O M m o d u l e c o n s i s t i n g


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI8F32123C ^ E D I ELECTRONIC DESIGNS, N C .I 128Kx32 Battery Backed SRAM Module ADVANCED Features 128Kx32 bit CMOS Static Random Access Memory with on-board battery backup 128Kx32 Static RAM CMOS, High Speed Module The EDI8F32123C is a 4 megabit Battery Backed SRAM


    OCR Scan     		PDF EDI8F32123C 128Kx32 EDI8F32123C 128Kx 128Kx8 EDI8F32123C70MMC EDI8F32123C85MMC EDBF32123C

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI88512C ELECTRONIC DESIGNS INC. Four Megabit Monolithic SRAM 512Kx8 Static RAM r a i u i i i M c w CMOS, Monolithic Features The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. The 32 pin DIP pinout adheres to the JEDEC stan­ dard for the four megabit device and is a pin for pin


    OCR Scan     		PDF EDI88512C 512Kx8 EDI88512C EDI8M8512C. 128Kx EDI88128C. EDI88512LP) MIL-STD-883,

    a719

    Abstract: EDI411024C 150ni 15trc 1MX1
    Text: E LECTRONIC DESIGNS INC m {• c h o n te o 30E D i • 3B30114 0 0 0 0 7 7 ? ö M EDI411024C High Performance Megabit Monolithic DRAM In e . < 1Mx1 Dynamic RAM CMOS, Monolithic y in m Features m T - y 6 -2 3 -1 5 The EDI4110240 is a high performance, low power


    OCR Scan     		PDF EDI411024C EDI4110240 T-46-23-15 EDI411024Ã Noie27 EDI411024C a719 150ni 15trc 1MX1

    EDI84256LPS25TB

    Abstract: EDI84256CS25TB EDI84256LPS35TB p 32 lcc 300 r EDI84256CS EDI84256CS25LB EDI84256CS35LB EDI84256LPS25LB EDI84256LPS35LB
    Text: EDI84256CS ^ EDI ELECTRONIC DESIGNS INC. High Performance Megabit Monolithic SRAM 256Kx4 Monolithic CMOS Static RAM, High Speed Features The EDI84256CS isa high speed, high performance, megabit density monolithic Static RAM organized as 256Kx4 bits. Inputs and outputs are TTL compatible and allow for


    OCR Scan     		PDF EDI84256CS 256Kx4 EDI84256CS EDI84256LPS, MIL-STD-883, EDI84256LPS) EDI84256CS35TB EDI84256LPS35TB EDI84256LPS25TB EDI84256CS25TB p 32 lcc 300 r EDI84256CS25LB EDI84256CS35LB EDI84256LPS25LB EDI84256LPS35LB

    vinavil 59

    Abstract: TME 57
    Text: ^EDI EDI9F416128C ELECTRONIC CCSGNS W Ci 4x128Kx16 SRAM Module 4x128Kx16 Static RAM CMOS, Module Features 4x128Kx16 bit CMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI9F416128LP • TTL Compatible Inputs and Outputs


    OCR Scan     		PDF EDI9F416128C 4x128Kx16 100ns EDI9F416128LP) EDI9F416128C 8192K 128Kx8 vinavil 59 TME 57

    Untitled

    Abstract: No abstract text available
    Text: W EDI8F2432C 5 À 32Kx24 SRAM Module ELECTRONIC DESIGNS N C 32Kx24 Static RAM CMOS, High Speed Module Features 32Kx24 bit CMOS Static The EDI8F2432C is a high speed 750Kbit Static RAM Random Access Memory module organized as 32Kx24. This module is constructed


    OCR Scan     		PDF EDI8F2432C 32Kx24 EDI8F2432C 750Kbit 32Kx24. 32Kx8

    Untitled

    Abstract: No abstract text available
    Text: _ EDI7F32512C m m ELECTRONIC DESIGNS INC. High Performance Four Megabit Flash EEPROM 512Kx32 CMOS Flash EEPROM Module Features The EDI7F32512C is a 5V-0nly In-System Programmable 512Kx32 bit CMOS Flash and Erasable Read Only Memory Module. Organized as Electrically Erasable Programmable


    OCR Scan     		PDF EDI7F32512C 512Kx32 EDI7F32512C 512Kx8 EDI7F32512C120BMC EDI7F32512C150BMC EDI7F32512C200BMC

    Untitled

    Abstract: No abstract text available
    Text: EDI784MS V ^E D I 4Megx8NAND Flash flE C T B O M C OESGN& WC. PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density


    OCR Scan     		PDF EDI784MS EDI784MSV 528-byte 250ms funI784MSV EDI784MSV50BB ED1784MSV50FB EDI784MSV50BB EDI7MMSV50BC 300MW

    A723

    Abstract: EDI8M3264C 64kx4
    Text: EDI8M3264C ELECTRONIC DESIGNS INC. • High Speed Two Megabit SRAM Module 64Kx32 Static RAM CMOS, High Speed Module Features The EDI8M3264C is a high speed 2 megabit Static RAM module organized as 64Kx32. This module is con­ structed from eight 64Kx4 Static RAMs in LCC packages on


    OCR Scan     		PDF EDI8M3264C 64Kx32 EDI8M3264C 64Kx32. 64Kx4 EDI8M3264C25C6B EDI8M3264C35C6B EDI8M3264C45C6B EDI8M3264C55C6B A723

    EDI8L3265C

    Abstract: OQ23 "Electronic designs inc"
    Text: ^EDI EDI8L3265C ELECTRONIC DESIGNS INC. High Performance Two Megabit SRAM 64Kx32 CMOS High Speed Static RAM O IM F O ^ IiS \T I i Features The EDI8L3265C is a high speed, high performance, 64Kx32 bit CMOS Static four megabit density Static RAM organized as a 64Kx32 bit Random Access Memory Array


    OCR Scan     		PDF EDI8L3265C 64Kx32 EDI8L3265C 128Kx16 EDI8L3265C, EDI8L3265C12AC EDI8L3265C15AC EDI8L3265C17AC EDI8L3265C20AC OQ23 "Electronic designs inc"

    Untitled

    Abstract: No abstract text available
    Text: m o i _ EDI8M8257C Electronic Designs Inc. High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C is a 2048K bit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic two megabit


    OCR Scan     		PDF EDI8M8257C 256Kx8 EDI8M8257C 2048K 128Kx8 the128Kx8 EDI8M8257LP) 323011M

    Untitled

    Abstract: No abstract text available
    Text: _ EDI8F2464C m o i Electronic Designs Inc.1 High Speed 1.5 Megabit SRAM Module 64Kx24 Static RAM CMOS; High Speed Module Features The EDI8F2464C is a high speed 1.5 megabit Static RAM module organized as 64Kx24. This module is 64Kx24 bit CMOS Static


    OCR Scan     		PDF EDI8F2464C 64Kx24 EDI8F2464C 64Kx24. 64Kx4 EDI8F2464C15MZC EDI8F2464C20MZC EDI8F2464C25MZC

    ed188130

    Abstract: EDI88130CS25CB EDI88130CS20TB EDI88130CS OD020
    Text: EDI88130CS ^EDI Electronic Designs Inc. • High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88130CS is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits. An additional chip enable line provides system memory


    OCR Scan     		PDF 128Kx8 EDI88130CS EDI88130LPS, MIL-STD-883, EDI88130CS ed188130 EDI88130CS25CB EDI88130CS20TB OD020

    dram 4mx4

    Abstract: ca713
    Text: EDI4M44096C M £Á ELECTRONIC DESIGNS INC. • High Performance 16 Megabit DRAM 4Mx4 Dynamic RAM CMOS, Multichip Microcircuit The EDI4M44096C is a high performance, low power CMOS Dynamic RAM Multichip Microcircuit organized as 4 Megabits x4. This device is based on four megabit


    OCR Scan     		PDF EDI4M44096C EDI4M44096C EDI4M44096C1OOZM dram 4mx4 ca713

    Untitled

    Abstract: No abstract text available
    Text: ^EDI _ EDI8F8259C Electronic Designs Inc. Commercial Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8F8259C is a 2 megabit CMOS Static RAM based on two high speed 256Kx4 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate.


    OCR Scan     		PDF EDI8F8259C 256Kx8 EDI8F8259C 256Kx4

    11DQ07

    Abstract: No abstract text available
    Text: ^EDI EDI8F32123C ELECTRONIC DESIGNS, N C . I 128Kx32 Battery Backed SRAM Module ADVANCED Features 128Kx32 bit CMOS Static Random Access Memory with on-board battery backup 128Kx32 Static RAM CMOS, High Speed Module The EDI8F32123C is a 4 megabit Battery Backed SRAM


    OCR Scan     		PDF 128Kx32 EDI8F32123C EDI8F32123C70MMC EDI8F32123C85MMC acturelDBF32123C 11DQ07

    Untitled

    Abstract: No abstract text available
    Text: 53EDI EDI7M32128C ELECTRONIC DESIGNS INC. High Performance Four Megabit Flash EEPROM Module 128Kx32 CMOS EEPROM Module Features The EDI7M32128C is a high speed, high perform­ ance, four megabit density Flash EEPROM module organized as 128Kx32 bits. The module has four


    OCR Scan     		PDF EDI7M32128C 128Kx32 EDI7M32128C 128Kx8 10x0100 020x45Â