FDIP28W Search Results

1N914

Abstract: M27256 LABLES INFORMATION
Contextual Info: M27256 NMOS 256K 32K x 8 UV EPROM FAST ACCESS TIME: 170ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V

1N914

Abstract: M27256 Electrolytic Capacitors - Quality flowchart
Contextual Info: M27256 NMOS 256K 32K x 8 UV EPROM FAST ACCESS TIME: 170ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V

M27512

Abstract: 1N914
Contextual Info: M27512 NMOS 512K 64K x 8 UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V

M27C64A

Abstract: 1N914 M2764A
Contextual Info: M2764A NMOS 64K 8K x 8 UV EPROM FAST ACCESS TIME: 180ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max 28 TTL COMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V

M27C256

Abstract: NM27C256B
Contextual Info: M27C256B 256 Kbit 32Kb x 8 UV EPROM and OTP EPROM Feature summary • 5V ± 10% supply voltage in Read operation ■ Access time: 45ns ■ Low power consumption: – Active Current 30mA at 5MHz – Standby Current 100µA 1 u d o FDIP28W (F) ■ Programming voltage: 12.75V ± 0.25V

1N914

Abstract: M2764A M27C64A
Contextual Info: M2764A NMOS 64K 8K x 8 UV EPROM FAST ACCESS TIME: 180ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max 28 TTL COMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V

1N914

Abstract: M27256 thomson 7895
Contextual Info: M27256 NMOS 256K 32K x 8 UV EPROM FAST ACCESS TIME: 170ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V

1N914

Abstract: M27128A
Contextual Info: M27128A NMOS 128K 16K x 8 UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5 V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 FDIP28W (F) ELECTRONIC SIGNATURE PROGRAMMING VOLTAGE: 12V

1N914

Abstract: M2764A M27C64A M2764AS
Contextual Info: M2764A NMOS 64K 8K x 8 UV EPROM FAST ACCESS TIME: 180ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max 28 TTLCOMPATIBLEDURING READ andPROGRAM FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V

1N914

Abstract: M27128A
Contextual Info: M27128A NMOS 128K 16K x 8 UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5 V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 FDIP28W (F) ELECTRONIC SIGNATURE PROGRAMMING VOLTAGE: 12V

M27512

Abstract: 1N914
Contextual Info: M27512 NMOS 512K 64K x 8 UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V

MK48T87B24

Abstract: ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR
Contextual Info: •y , . r i'. " - L. - S .• u _ NON VOLATILE MÉMBMES CMOS UV EPROM and OTP ROM Size 64K 256K Part N umber O rganisation Ucc ns Vcc Range Icc ! Stby Tem perature Range (°C) Package M27C64A-15F1 8K X 8 150 5V ± 10% 30mA / 1 00nA Oto 70 FDIP28W

ST M27C256B

Abstract: M27C256B PDIP28 PDIP32 PLCC32
Contextual Info: M27C256B 256 Kbit 32Kb x 8 UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Current 30mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 100µs/byte

1N914

Abstract: M2764A M27C64A
Contextual Info: M2764A NMOS 64 Kbit 8Kb x 8 UV EPROM NOT FOR NEW DESIGN • FAST ACCESS TIME: 180ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 35mA max ■ TTL COMPATIBLE DURING READ and PROGRAM ■ FAST PROGRAMMING ALGORITHM ■

Contextual Info: /T T SGS'THOMSON ^ 7 # G fflD IIM ilL IO T M O IS i M 2 7 V 256 LOW VOLTAGE 256K 32K x 8 UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 90ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|jA

Contextual Info: 5 7 . SGS-THOMSON M87C257 IM 0 ffi ô [SHIgM ( ô ) IM H ( 5 g AD D RESS LATCHED 256K (32K x 8) UV EPROM and OTP ROM • INTEGRATED ADDRESS LATCH ■ VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS’ CONSUMPTION:

Contextual Info: SGS-1H0 M S0 N A 7 M . [» iS m ifg M M t g M 87C 257 ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM • INTEGRATED ADDRESS LATCH ■ FAST ACCESS TIME: 45ns ■ LOW POWER “CMOS" CONSUMPTION: - Active Current 30mA - Standby Current 100(iA ■ PROGRAMMING VOLTAGE: 12.75V

Contextual Info: /T T SGS'THOMSON ^ 7 # G fflD IIM ilLIO T M O IS i M 2 7V 5 12 LOW VOLTAGE 512K 64K x 8 UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 90ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|jA

Contextual Info: SGS-THOMSON Q g^(ô g[L[l TO(Q)iQ©S M27C256B 256K (32K x 8) UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE - LOW POWER “CMOS’ CONSUMPTION: - Active Current 30mA - Standby Current 10OjiA

ST62T65BM

Abstract: ST62E60/T60
Contextual Info: ST62E60B, T60B ST62E65B, T65B SGS-THOMSON 8-BIT OTP/EPROM HCMOS MCUs WITH A/D CONVERTER, EEPRQM & AUTORELOAD TIMER PRELIMINARY DATA 3.5 to 6.0V Supply Operating Range 8 MHz M aximum Clock Frequency -40 to +85°C Operating Tem perature Range Run, W ait & Stop Modes

Contextual Info: _M27V256 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION: - Active Current 10mA at 5MHz - Standby Current 10|j,A ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

11PROGRAMMING

Abstract: 4606 IC circuit diagram ad 4606 m27c512 PLCC32 J-STD-020B M27C512 PDIP28 PLCC32 EPROM M27C512
Contextual Info: M27C512 512 Kbit 64K x8 UV EPROM and OTP EPROM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V

1N914

Abstract: M27128A
Contextual Info: M27128A NMOS 128 Kbit 16Kb x 8 UV EPROM NOT FOR NEW DESIGN • FAST ACCESS TIME: 200ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5 V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRAM ■ FAST PROGRAMMING ALGORITHM

TSOP40 Flash

Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS