M2764A Search Results

Contextual Info: 90 9724 7 .TOSHIBA, TOSHIBA-. 02E ELECTRONIC ELECTRONIC G2 D E | TCH TH 16364 D.: . x*:*.-: 47 ODli'bBraM 0 -ï:- ROM Read Only Memory »NMOS EPROM Capacity 64K Bit Typo No. . . Component TM M 2764AD-15 TM M 2764AD-20 TM M2764ADI-15 M2764ADI-20 Max. Access Max.* Cycle

1N914

Abstract: M2764A M27C64A
Contextual Info: M2764A NMOS 64 Kbit 8Kb x 8 UV EPROM NOT FOR NEW DESIGN • FAST ACCESS TIME: 180ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 35mA max ■ TTL COMPATIBLE DURING READ and PROGRAM ■ FAST PROGRAMMING ALGORITHM ■

TSOP40 Flash

Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS

FDIP24W

Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS

m27128 eprom

Abstract: M27128 M27128A M27128A-20 M27128A-30 M2716 M27256 M2732A M2764A M27128AS
Contextual Info: infer M27128A Advanced 128K 1 6 x 8 UV Erasable PROM Military • lnteligent P r o g r a m m i n g Algorithm — Fastest EPROM Programming ■ lnteiigent Identifier™ Mode — Automated Programming Operations ■ Compatible with M2764A and M27256

180NS

Abstract: b2764a M2764A M27C64A
Contextual Info: M2764A NMOS 64K 8K x 8 UV EPROM DATA BRIEFING FAST ACCESS TIME: 180ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max TTL COMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM ELECTRONIC SIGNATURE PROGRAMMING VOLTAGE: 12V

M27C64A

Abstract: 1N914 M2764A
Contextual Info: M2764A NMOS 64K 8K x 8 UV EPROM FAST ACCESS TIME: 180ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max 28 TTL COMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V

180NS

Abstract: M2764A M27C64A b2764a A0-A12
Contextual Info: M2764A 64 Kbit 8Kb x 8 NMOS UV EPROM DATA BRIEFING FAST ACCESS TIME: 180ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max TTL COMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM ELECTRONIC SIGNATURE PROGRAMMING VOLTAGE: 12V

Contextual Info: / = T ^ 7 #. S C S -T H O M S O N HQ g[E(Q [lLE(gir^(Q)ilQ(gi M2764A NMOS 64K (8K x 8) UV EPROM • FAST ACCESS TIME: 180ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 35mA max ■ TTL COMPATIBLE DURING READ and PROGRAM

VA00776

Contextual Info: r=7 SGS-THOMSON M2764A NMOS 64K 8K x 8 UV EPROM • FAST ACC ESS TIM E: 180ns • EXTENDED TEM PERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 35m A max ■ TTL COMPATIBLE DURING READ AND PROGRAM ■ FAST PROGRAMM ING ALGORITHM ■ ELECTRONIC SIGNATURE

M2764A

Contextual Info: M2764A NMOS 64K 8K x 8 UV EPROM DATA BRIEFING FAST ACCESS TIME: 180ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max TTLCOMPATIBLEDURING READ andPROGRAM FAST PROGRAMMING ALGORITHM ELECTRONIC SIGNATURE PROGRAMMING VOLTAGE: 12V

EPROM

Abstract: M87C512 m27c256 UV EPROM ET2716
Contextual Info: GENERAL INDEX EPROM DEVICES NMOSEPROM M/ET2716 2K x 8 M2732A (4K x 8) M2764A (8K x 8) M27128A (16K x 8) M27256 (32K x 8) M27512 (64K x 8) UV EPROM . UV EPROM .

1N914

Abstract: M2764A M27C64A
Contextual Info: M2764A NMOS 64K 8K x 8 UV EPROM FAST ACCESS TIME: 180ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max 28 TTL COMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V

1N914

Abstract: M2764A M27C64A M2764AS
Contextual Info: M2764A NMOS 64K 8K x 8 UV EPROM FAST ACCESS TIME: 180ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max 28 TTLCOMPATIBLEDURING READ andPROGRAM FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V

M27C64a

Abstract: 1N914 M2764A
Contextual Info: / = 7 SG S-TH O M SO N * 7 1, IMII 5lsi(ô HHlg(Smûlfflil(Sg M2764A NMOS 64K (8K x 8) UV EPROM • FAST ACCESS TIME: 180ns ■ EXTENDED TEMPE RATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 35mA max ■ TTL COMPATIBLE DURING READ aid PROGRAM

EPROM M2764af1

Abstract: m2764af1 EPROM 2764a M2764A20F1 M2764A-2F1 - SGS M2764A M2764A-2F1 2764A M2764A-20F1 M2764A-3F1
Contextual Info: ses M2764A,î' I ADVANCE DATA 64K 8K x 8 UV ER ASABLE PROM FAST ACCESS TIME: 200ns 250ns 300ns 450ns M AX M AX M AX MAX M 2764A-2F1/M 2764A-20F1 M 2764AF1/M 2764AF6/M 2764A-25F1 M 2764A-3F1/M 2764A-30F1 M 2764A-4F1/M 2764A-4F6/M 2764A-45F1 0 to 70 °C STANDARD TEM PERATURE

M27128

Abstract: M27128A M27128A-20 M27128A-30 M2716 M27256 M2732A M2764A AP-72 M27MA
Contextual Info: M27128A Advanced 128K 16x8 UV Erasable PROM Military m lnteligent P r o g r a m m i n g Algorithm — Fastest EPROM Programming • lnteiigent Identifier™ Mode — Automated Programming Operations ■ Compatible with M2764A and M27256 ■ Military Temperature Range

1N914

Abstract: M2764A M27C64A
Contextual Info: M2764A NMOS 64 Kbit 8Kb x 8 UV EPROM NOT FOR NEW DESIGN FAST ACCESS TIME: 180ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max TTL COMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM 28 ELECTRONIC SIGNATURE 1

Contextual Info: 5 7 . SG S-TH O M SO N M2764A •LI NMOS 64K 8K x 8 UV EPROM FAST ACCESS TIME: 180ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max TIL COMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM ELECTRONIC SIGNATURE

Contextual Info: K 0 A KAOHSIUNG 3bE D m SD4b0fl2 OODDDlt □ • K O A ' f - H u - o \ t - u\.<\ - n - DV u / SEMICONDUCTOR DEVICES * MPU • ROM M bit 16K 32K EPROM M2716 • M 2732 M2764A TS27C64A M27128A M 27256 M27C256B M27512 M27C512 M27C1000 M27C1001 M27C1024 2KX8

Contextual Info: SGS-THOMSON M2764A 64K 8K x 8 NMOS UV EPROM - OTP ROM • FAST ACCESS TIME : 180 ns. ■ 0 TO + 70 °C STANDARD TEMPERATURE RANGE. ■ - 40 to + 85 °C EXTENDED TEMPERATURE RANGE. ■ SINGLE + 5V POWER SUPPLY. ■ ± 10 % Vcc TOLERANCE AVAILABLE. ■ LOW STANDBY CURRENT (35mA max).

Contextual Info: ¿ T T SGS-THOMSON M2764A NMOS 64K 8K x 8 UV EPROM • FAST ACCESS TIM E: 180ns ■ EXTENDED TEM PERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 35m A max ■ TTL COMPATIBLE DURING READ AND PROGRAM ■ FAST PROGRAMM ING ALGORITHM ■ ELECTRONIC SIGNATURE

EPROM M2764

Abstract: EPROM M2764af1 ST2764A-20CP M2764AF1 2764A1 ST2764A20CP 2764A-2
Contextual Info: SGS-THOMSON M2764A •LI 64K 8K x 8 NMOS UV EPROM - OTP ROM FAST ACCESS TIME : 180 ns. 0 TO + 70 °C STANDARD TEMPERATURE RANGE. - 40 to + 85 °C EXTENDED TEMPERATURE RANGE. SINGLE + 5V POWER SUPPLY. ± 10 % Vcc TOLERANCE AVAILABLE. LOW STANDBY CURRENT (35mA max).

1N914

Abstract: M2764A M27C64A
Contextual Info: M2764A NMOS 64 Kbit 8Kb x 8 UV EPROM NOT FOR NEW DESIGN • FAST ACCESS TIME: 180ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 35mA max ■ TTL COMPATIBLE DURING READ and PROGRAM ■ FAST PROGRAMMING ALGORITHM ■