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    IRF122 Search Results

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    IRF122 Price and Stock

    Rochester Electronics LLC IRF122

    N-CHANNEL POWER MOSFET
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    DigiKey IRF122 Bulk 341
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    IRF122 Bulk 341
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    Vicor Corporation VI-RF122-CYUU

    VI-RF122-CYUU 12V 15V 15V/50W
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    DigiKey VI-RF122-CYUU Bulk
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    Vishay Siliconix IRF122

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    Bristol Electronics IRF122 6,739
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    New Jersey Semiconductor Products, Inc. IRF122

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRF122 2,504 1
    • 1 $11.25
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    • 100 $6.75
    • 1000 $6.4687
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    SGS Semiconductor Ltd IRF122

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    Bristol Electronics IRF122 1
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    IRF122 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF122 Intersil 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 ?, N-Channel, Power MOSFETs Original PDF
    IRF122 Fairchild Semiconductor N-Channel Power MOSFETs, 11 A, 60-100 V Scan PDF
    IRF122 FCI POWER MOSFETs Scan PDF
    IRF122 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF122 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. Scan PDF
    IRF122 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF122 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRF122 International Rectifier TO-39 / TO-3 N-Channel HEXFET Power MOSFETs Scan PDF
    IRF122 Motorola European Master Selection Guide 1986 Scan PDF
    IRF122 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF122 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF122 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    IRF122 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF122 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF122 Unknown FET Data Book Scan PDF
    IRF122 Samsung Electronics N-CHANNEL POWER MOSFETS Scan PDF
    IRF122 Siliconix MOSPOWER Design Data Book 1983 Scan PDF

    IRF122 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF120

    Abstract: irf122 irf123
    Text: IRF120, IRF121, IRF122, IRF123 S E M I C O N D U C T O R 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs October 1997 Features Description • 8.0A and 9.2A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original
    PDF IRF120, IRF121, IRF122, IRF123 TA09594. IRF123 IRF120 irf122

    IRF120

    Abstract: irf121 IRF122 IRF123 TB334
    Text: IRF120, IRF121, IRF122, IRF123 Semiconductor 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs October 1997 Features Description • 8.0A and 9.2A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original
    PDF IRF120, IRF121, IRF122, IRF123 IRF120 irf121 IRF122 IRF123 TB334

    Untitled

    Abstract: No abstract text available
    Text: IRF122 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)7.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40 Minimum Operating Temp (øC)


    Original
    PDF IRF122

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original
    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    irf121

    Abstract: IRF120 IRF123
    Text: iH A R R is IRF120, IRF121, IRF122, IRF123 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs O cto be r 1997 Features Description • 8.0A and 9.2A, 80V and 100V • High Input Im pedance T h e se are N -C hannel e n h a n ce m e n t m ode silicon gate


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    PDF IRF120, IRF121, IRF122, IRF123 RF123 irf121 IRF120 IRF123

    IRF150 To220 package

    Abstract: irf150 to220 IRFP240 xg32 ULTRA FAST RECOVERY RECTIFIERS to-220 irf64d to-3p 1500V IRF122 IRF123 IRF131
    Text: FREDERICK COMPONENTS MIE 3> • 37n4ñS Q0D01b3 5 M F C I A CORTON CO M PA N Y C POWER MOSFETs P ART-N O IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF232


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    PDF Q0D01b3 IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF150 To220 package irf150 to220 IRFP240 xg32 ULTRA FAST RECOVERY RECTIFIERS to-220 irf64d to-3p 1500V

    OA 207 B diode

    Abstract: IRF120 IRFI20 dioda 30 Ampere irf121 IRF122 IRF123 IRFt20
    Text: 3875081 G E SOLID _STATE_~üï DE 3A7S0Ö1 DDlflEb4 □ f o T~ 3 J - // - Standard PowerMOSFETs IRF120, IRF121, IRF122, IRF123 File Number 1565 Power MOS Field-Effect Transistors


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    PDF IRF120, IRF121, IRF122, IRF123 0V-100V IRF122 IRF123 OA 207 B diode IRF120 IRFI20 dioda 30 Ampere irf121 IRFt20

    IRF123

    Abstract: IRF120 IRF1 CQ 1565 RT irf121 IRF122 RF123 IRF1Z0
    Text: Standard Power MOSFETs- IRF120, IRF121, IRF122, IRF123 File Number 1565 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-C HANNEL EN HANCEM ENT MODE 7.0A and 8.0A, 60V-100V


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    PDF IRF120, IRF121, IRF122, IRF123 0V-100V IRF122 IRF120 IRF1 CQ 1565 RT irf121 RF123 IRF1Z0

    irf113

    Abstract: IRF111 IRFI30 1RF48 IRF224 IRF48 1RF220 1RF9Z32 IR 310A IRF035
    Text: - 250 - m € tt € Ta=25<1C f t Vds Vgs I d P d or * /CH * /CH 4- Vdg If 1RF9Z32 IRF48 IRF034 IRFQ35 1RF044 IRF045 1RF120 IRF121 IRF122 IRF123 IRFI30 IRF131 IRF132 IRFI33 IRF14Û IRF141 IRFI42 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223


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    PDF 1RF9Z32 O-220AB 1RF48 IRF034 irf222 irf223 irf224 O-204AA irf225 irf113 IRF111 IRFI30 IRF48 1RF220 IR 310A IRF035

    Untitled

    Abstract: No abstract text available
    Text: IRF120, IRF121 IRF122, IRF 123 31 HARRIS N-Channel Enhancem ent-M ode Power Field-Effect Transistors August 1991 Package Features T 0 -2 0 4 A A • 8.0A and 9.2A , 8 0 V - 100V BOTTOM VIEW • rD S on = 0 .2 7 f l and 0 .3 6 0 SOURCE • S O A is P ow er-D issip atio n Limited


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    PDF IRF120, IRF121 IRF122,

    Untitled

    Abstract: No abstract text available
    Text: IRF120, IRF121, IRF122, IRF123 HARRIS S E M I C O N D U C T O R 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs October 1997 Description Features 8.0A and 9.2A, 80V and 100V Majority Carrier Device These are N-Channel enhancement mode silicon gate


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    PDF IRF120, IRF121, IRF122, IRF123 RF122,

    blf544b

    Abstract: IRF224 IRF48 IRF9110 usb pre amplifier circuit diagram IRF035 irf113 IRF034 IRF123 blf245
    Text: - 250 - m € tt € f Ta=25<1C t Vds Vg s or 4- Vdg Id If 1RF9Z32 IRF48 IRF034 IRFQ35 1RF044 IRF045 1RF120 IRF121 IRF122 IRF123 IRFI30 IRF131 IRF132 IRFI33 IRF14Û IRF141 IRFI42 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223 IRF224 IRF225


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    PDF 1RF9Z32 O-220AB 1RF48 IRF034 OT-268 BIF548 OT-262 IRF9Z10 O-220 blf544b IRF224 IRF48 IRF9110 usb pre amplifier circuit diagram IRF035 irf113 IRF123 blf245

    power 22D

    Abstract: irf64d IRF740 IRFP240 IRFP450 bridge IRF350 IRF120 IRF122 IRF123 IRF130
    Text: FRED ERICK COMPONENTS MIE 3> • 37n4ñS Q0D01b3 5 M FCI A CORTON COM PANY C POWER MOSFETs P ART-N O IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF232 IRF233


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    PDF QDD01b3 IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 power 22D irf64d IRF740 IRFP240 IRFP450 bridge IRF350

    irf121

    Abstract: IRF123 367AL irf120 312H IRF122 IW120
    Text: Data Sheet No. PD-9.312H I«R INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IR F I 2 IRF121 IRF122 NCHANNEL IRF123 100 Volt, 0.27 Ohm HEXFET T0-204AA TO-3 Hermetic Package


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    PDF IRF121 T0-204AA IRF120, IRF121, IRF122, IRF123 irf121 367AL irf120 312H IRF122 IW120

    MTM40N20

    Abstract: MTM8N18 MTM45N12 MTM45N15 MTM40N18 IRF233 MTM8N10 MTM20N10 IRF240 IRF252
    Text: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 V b R(DSS) (Volts) Min (Ohms) Max (Amp) 200 0.18 10 0.16 7.5 0.12 16 Pd <“•Tc = 25°C (Wans) Max IRF240 • 18 125 M TM 15N 20 • 15


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    PDF O-204AA IRF240 MTM15N20 IRF252Â IRF250Â MTM40N20 MTM5N18 MTM5P18* MTM7N18 MTM8P18* MTM8N18 MTM45N12 MTM45N15 MTM40N18 IRF233 MTM8N10 MTM20N10 IRF240 IRF252

    irf9110

    Abstract: SOT-123 IRF224 irf113 1rf48 BUZ10 BUZ63 IRF9122 irfl33 IRF034
    Text: - 250 - Ta=25<1C f m € tt € t Vd s or 4- V d g Vg s (V) (V) If l: * /CH * /CH (A) (W) V g s th) 1DSS Jg s s Pd Id max (nA) Vg s (V) C m A) Vd s (V) (V) (V) Id (mA) ff] % ft 1± Ciss (max) *typ V g s ( 0 ) (V) *typ (A) Id (A) 140* -25 TO-220AB 190* 25 TO-220AB


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    PDF 1RF9Z32 O-220AB 1RF48 IRF034 BUZ171 O-220ftB irf120 to-204aa irf9110 SOT-123 IRF224 irf113 BUZ10 BUZ63 IRF9122 irfl33

    BUZ171

    Abstract: TO-236-AA buz90 BUZ80A BUZ84A BUZ10 BUZ11 buzh F133 251C
    Text: - 272 - f m % *± m * Vd s or £ t V £ Vg s Vd g V (V) %i fê (Ta=25,C ) ÎD Pd * /CH * /CH (A) (W) (nA) Vg s th) Id s s ÎGSS Vg s (V) (UA) Vd s (V) min max (V) (V) % 14 (Ta=25,C ) b(on) Ciss gfs Vg s (V) (Q> Id (A) Vg s (V) *typ (A) *typ (S) 3.0 1.0 6.0


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    PDF BSI07A O-226kk BS170 O-226AA BSS123 O-236AA O-220AB BUZ171 O-220ftB irf120 TO-236-AA buz90 BUZ80A BUZ84A BUZ10 BUZ11 buzh F133 251C

    2N6155

    Abstract: BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BSS92 BUZ64
    Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- + SIEMENS SIEMENS SIEMENS SIEMENS


    OCR Scan
    PDF SSS6N60 O-220 8SS89 BSS92 8SS100 O-220AB BUZ171 O-220ftB irf120 to-204aa 2N6155 BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BUZ64

    SOT-123

    Abstract: IRF9110 PHILIPS TO220 blf544b BLF246 BLF348 irc224 IRC350 IRC530 IRC832
    Text: - % % A f ft i Vd s or Vd g tt £ i T Vg s Ta=25'C) «É. Ig s s Id Pd * /C H * /CH (W) Vds (V) Id (nA) g fs Io(on) C ís s Coss ft B m ♦typ Vg s (V) (0) Id (A) * ty p (A) Vg s (V) *typ (S) Id (max) (max) (max) % (A) (pF) (pF) (pF) Vd s (V) % (V) P '200 ± 2 0


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    PDF 2k6847 o-205af 2n6849 2n6851 OT-268 BIF548 OT-262 IRF9Z10 O-220 SOT-123 IRF9110 PHILIPS TO220 blf544b BLF246 BLF348 irc224 IRC350 IRC530 IRC832

    BUZ171

    Abstract: 8UZ11 SILICONIX t02G BUZ10 BUP67 BUP68 BUP69 BUP70 BUP71
    Text: - 318 - f * A Vd s m £ tt ft Vg s %l ts Ta=25*C Id Pd Vg s (th) Id s s I g ss or € % m 4# tos(on) Vp:>= 14 (Ta=25<C ) Ip(on) Ciss g fs Coss Vd g * /CH * /CH (V) (A) (IV) V g s =0 (max) max min (nA) 500 ± 4 0 ±4 . 47 100 ±100 ±30 1000 500 3 6 1 2 10


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    PDF BUP67 O-204AA BUP68 T0-204AA BUP69 O-220AB BUZ171 O-220ftB irf120 to-204aa 8UZ11 SILICONIX t02G BUZ10 BUP70 BUP71

    1RF820

    Abstract: VN64GA VN2410M IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 IRF840
    Text: Ü Ü A C D ^ U / C D M i v i a Dr/\W i iv i v ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: u BVqss Volts 450-500 TO-3 TO-220


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    PDF O-220 O-237 O-202 IRF450 IRF840 IRF440 VN5001D/IRF830 VNP002A* IRF820 VN5001A/IRF430 1RF820 VN64GA VN2410M IRF340 IRF350 IRF740

    VN64GA

    Abstract: IRF733 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150
    Text: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100 100 100 100 100 100 90 90


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    PDF IRF150 IRF152 IRF140 IRF142 VN1000A IRF130 VN1001A IRF132 IRF120 IRF122 VN64GA IRF733 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150

    irf250

    Abstract: IRF133 international rectifier 2sk135 equivalent HPWR 6501 IRF350 2SK132 2SK133 HPWR-6502 HPWR-6503 HPWR-6504
    Text: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPWR-6501 HPW R-6502 HPW R-6503 HPW R-6504 BV d s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 TO -3 TO -3 TO -3 TO -3 100 120 140 160 180 200


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    PDF PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 irf250 IRF133 international rectifier 2sk135 equivalent HPWR 6501 IRF350 2SK133

    pn junction DIODE 1N4001

    Abstract: VN64GA IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF IVN6200CNH IVN6200CNM VN0401D
    Text: 1-17 MOSPOWER Cross Reference List c « g s s <0J= i n i n m i n • - CM CM CM ^ • 'd d d o d 1o o o o o I m iD lO m | I I I | ' r r r 's ' < O Ò ' ' ' lO ' I O O I I I P ' ' ' ' I o o r i mm | ioom m I L -^ ^ l I c\i CM i I I j j CO 00 CO CO j I I I I OOOO


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    PDF IVN6100TNU IVN6200CND O-220 VN0401D IVN6200CNE T0-220 IRF533 IVN6200CNF VN0801D pn junction DIODE 1N4001 VN64GA IVN6200CNH IVN6200CNM