JANTXV2N Search Results

Contextual Info: Catalog Nummary This document is a summary description of this device. R e fe r to the detailed product d ata sh e e t or m anufacturing division for details. Catalog ID 19901 MicrosemiCorp. I Watertown Division Division Phone: 617 926-0404 9/22/98 JANTXV2N3700!

2N7218

Abstract: 2N7219 2N7221 2N7222 JANTX2N7218 JANTX2N7219 JANTX2N7221 JANTX2N7222 JANTXV2N7218 JANTXV2N7219
Contextual Info: 2N7218, JANTX2N7218, JANTXV2N7218 2N7219, JANTX2N7219, JANTXV2N7219 2N7221, JANTX2N7221, JANTXV2N7221 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/596 100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated

2N7224 JANTXV

Abstract: 3000CL 2N7224 IRFM150
Contextual Info: Data Sheet No. PD-9.487C INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM150 SN7SS4 JANTXSN7SS4 JANTXV2N7224 ;n N-CHANNEL [REF: M IL-S-19500/59S] Product Summary 100 Volt, 0.07 Ohm HEXFET The HEXFET® technology is the key to International

T3D DIODE

Abstract: 2n7226 mosfet k 1357 T3D 76 T3D 40 DIODE 2N7228 JANTX T3D 65 diode T3D 53 diode t3d diode type T3D 83 DIODE
Contextual Info: Data Sheet No. PD-9.493E INTERNATIONAL RECTIFIER l l O R l REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM450 SN72S8 JANTX2N7228 JANTXV2N7228 ;n N-CHANNEL [REF: MIL-S-135OO/502] 500 Volt, 0.415 Ohm HEXFET Product Summary The HEXFET® technology is the key to International

spice models

Abstract: IRFM340 JANTX2N7221 JANTXV2N7221
Contextual Info: PD - 90490D POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM340 JANTX2N7221 JANTXV2N7221 REF:MIL-PRF-19500/596 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM340 0.55 Ω 10A HEXFET® MOSFET technology is the key to International

IRFE9120

Abstract: JANTX2N6845U JANTXV2N6845U LCC-18
Contextual Info: PD -93988 IRFE9120 JANTX2N6845U JANTXV2N6845U [REF:MIL-PRF-19500/563] 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS SURFACE MOUNT LCC-18 Product Summary Part Number IRFE9120 BVDSS -100V RDS(on) ID 0.60Ω −3.5A The leadless chip carrier (LCC) package represents the

2N7228 JANTX mosfet

Abstract: 2N7228 JANTX IRFM450 IOR 235 IOR MOSFET 2N7228 JANTX mosfet data sheet 2N7228 JANTXV2N7228 I-362 I-361
Contextual Info: Data Sheet No. PD-9.493E INTERNATIONAL RECTIFIER X & R REPETITIVE AVALANCHE RATED AND dv/dt RATED TRANSISTOR IRFM45Q S N 7 C E S N-CHANNEL JANTX2N722B JANTXV2N7228 REF: MIL-S-19500/59S] 500 Volt, 0.415 Ohm HEXFET Product Summary The HEXFET technology is the key to International

LD 33 regulator

Abstract: JANTXV2N6800 IRFF330 JANTX2N6800
Contextual Info: PD - 90432C IRFF330 JANTX2N6800 JANTXV2N6800 REF:MIL-PRF-19500/557 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF330 BVDSS 400V RDS(on) 1.0Ω ID 3.0A  The HEXFET technology is the key to International

IRF9130

Abstract: IRF9130 mosfet gate drive for mosfet irf9130 JANTX2N6804 JANTXV2N6804
Contextual Info: PD - 90549C IRF9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804  HEXFET TRANSISTORS JANTXV2N6804 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/562] 100V, P-CHANNEL Product Summary Part Number IRF9130 BVDSS -100V RDS(on) 0.30 Ω ID -11A The HEXFETtechnology is the key to International

IRFN9240

Abstract: JANTX2N7237U JANTXV2N7237U
Contextual Info: PD - 91554D POWER MOSFET SURFACE MOUNT SMD-1 IRFN9240 JANTX2N7237U JANTXV2N7237U REF:MIL-PRF-19500/595 200V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFN9240 RDS(on) I D 0.51Ω -11A HEXFET® MOSFET technology is the key to International

IRFN340

Abstract: JANTX2N7221U JANTXV2N7221U mosfet 60a 200v
Contextual Info: PD - 91550C POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN340 JANTX2N7221U JANTXV2N7221U REF:MIL-PRF-19500/596 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN340 0.55 Ω 10A HEXFET® MOSFET technology is the key to International

MIL-PRF-19500/592

Abstract: IRFN350 JANTX2N7227U JANTXV2N7227U 400V Single N-Channel HEXFET Power MOSFET
Contextual Info: PD - 91551C POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN350 JANTX2N7227U JANTXV2N7227U REF:MIL-PRF-19500/592 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN350 0.315 Ω 14A HEXFET® MOSFET technology is the key to International

IRFN440

Abstract: JANTX2N7222U JANTXV2N7222U
Contextual Info: PD - 91552C POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN440 JANTX2N7222U JANTXV2N7222U REF:MIL-PRF-19500/596 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN440 0.85 Ω 8.0A HEXFET® MOSFET technology is the key to International

SMD1P

Abstract: 2N7222U IRFN440 JANTX2N7222U JANTXV2N7222U irfn44
Contextual Info: PD-91552B IRFN440 JANTX2N7222U JANTXV2N7222U HEXFET POWER MOSFET [REF:MIL-PRF-19500/596] N - CHANNEL Ω MOSFET 500 Volt, 0.85Ω Product Summary HEXFET® power MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry

IRFE9230

Abstract: JANTX2N6851U JANTXV2N6851U LCC-18
Contextual Info: PD - 91717B IRFE9230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6851U  HEXFET TRANSISTORS JANTXV2N6851U SURFACE MOUNT LCC-18 [REF:MIL-PRF-19500/564] 200V, P-CHANNEL Product Summary Part Number IRFE9230 BVDSS -200V RDS(on) 0.80Ω ID -4.0A The leadless chip carrier (LCC) package represents the

IRF250

Abstract: irf250 datasheet IRF 543 MOSFET JANTX2N6766 JANTXV2N6766 avalanche diode 30A IRF250 TO-247
Contextual Info: PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766  HEXFET TRANSISTORS JANTXV2N6766 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number IRF250 BVDSS 200V RDS(on) 0.085Ω ID 30A The HEXFETtechnology is the key to International

IRFG110

Abstract: JANTX2N7334 JANTXV2N7334 MO-036AB
Contextual Info: PD-90396H POWER MOSFET THRU-HOLE MO-036AB IRFG110 JANTX2N7334 JANTXV2N7334 REF:MIL-PRF-19500/597 100V, QUAD N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFG110 0.7 Ω 1.0A HEXFET® MOSFET technology is the key to International

Contextual Info: SCF2N6851T2 JANTX2N6851 JANTXV2N6851 POWER MOSFET FOR RUGGED ENVIRONMENTS TO-205AF TO-39 DESCRIPTION REF: MIL-PRF-19500/564 • P-Channel  -200 Volt  < 0.800 Ohms  -4 Amp SEMICOA’s MOSFET technology is designed for rugged environments providing excellent long term reliabiity. SEMICOA’s long heritage providing military grade technology and packaging allows these devices to be

Contextual Info: SCF2N7227T1 JANTX2N7227 JANTXV2N7227 POWER MOSFET FOR RUGGED ENVIRONMENTS REF: MIL-PRF-19500/592 • N-Channel  400 Volt  < 0.315 Ohms  14 Amp TO-254AA DESCRIPTION SEMICOA’s MOSFET technology is designed for rugged environments providing excellent long term reliability. SEMICOA’s long heritage providing military grade technology and packaging allows these devices to be

IRFE210

Abstract: JANTX2N6784U JANTXV2N6784U
Contextual Info: Provisional Data Sheet No. PD - 9.1722 IRFE210 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6784U HEXFET TRANSISTOR JANTXV2N6784U [REF:MIL-PRF-19500/556] N-CHANNEL Ω , HEXFET 200Volt, 1.5Ω Product Summary The leadless chip carrier LCC package represents

IRFE420

Abstract: JANTX2N6794U JANTXV2N6794U LCC-18
Contextual Info: PD - 93986A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT LCC-18 IRFE420 JANTX2N6794U JANTXV2N6794U REF:MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) IRFE420 500V 3.0Ω ID 1.4A LCC-18 The leadless chip carrier (LCC) package represents the

IRF 260 N

Abstract: IRFF220 JANTX2N6790 JANTXV2N6790
Contextual Info: PD - 90427D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF220 JANTX2N6790 JANTXV2N6790 REF:MIL-PRF-19500/555 200V, N-CHANNEL Product Summary Part Number IRFF220 BVDSS RDS(on) ID 200V 3.5A 0.80Ω T0-39 ® The HEXFET technology is the key to International

Contextual Info: Provisional Data Sheet No. PD - 9.1699 International IO R Rectifier ir f e h o JANTX2N6782U HEXFET TRANSISTOR JANTXV2N6782U [REF:MIL-PRF-19500/556] R E P E T IT IV E A V A LA N C H E A N D d v /d t R A TED N -C H A N N E L Product Summary 100V olt,0.60ii, HEXFET

Contextual Info: Jp|j-0fpi QtjOfi QI Provisional Data Sheet No. PD-9.424B IGR Rectifier JANTX2N6784 HEXFET POWER MOSFET JANTXV2N6784 [REF:MIL-PRF-19500/556] [GENERIC:IRFF210] N -C H A N N E L 200 Volt, 1.50 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transis­