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    IRFF312, Search Results

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    IRFF312, Price and Stock

    NJ SEMI IRFF312

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFF312 3,663 1
    • 1 $19.2
    • 10 $19.2
    • 100 $16.9843
    • 1000 $15.744
    • 10000 $15.744
    		Buy Now

    New Jersey Semiconductor Products Inc IRFF312

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFF312 2,930
    • 1 $20.8
    • 10 $20.8
    • 100 $20.8
    • 1000 $16
    • 10000 $16
    		Buy Now

    IRFF312, Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    IRFF312
    		General Electric Power Transistor Data Book 1985 Scan PDF 125.7KB 2
    IRFF312
    		General Electric Power MOSFET field effect power transistor. Drain-source voltage 400 V. Scan PDF 70.59KB 1
    IRFF312
    		Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF 197.36KB 5
    IRFF312
    		International Rectifier TO-39 Package N-Channel HEXFET Scan PDF 102.24KB 1
    IRFF312
    		International Rectifier N-Channel Power MOSFETs Scan PDF 34.17KB 1
    IRFF312
    		International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF 44.22KB 1
    IRFF312
    		Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 32.97KB 1
    IRFF312
    		Unknown Semiconductor Master Cross Reference Guide Scan PDF 121.78KB 1
    IRFF312
    		Unknown FET Data Book Scan PDF 123.52KB 2
    IRFF312
    		Unknown Shortform Datasheet & Cross References Data Short Form PDF 83.99KB 1
    IRFF312
    		Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF 95.83KB 1
    IRFF312R
    		Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF 203.88KB 5
    IRFF312R
    		International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF 48.45KB 1
    IRFF312R
    		Unknown Shortform Datasheet & Cross References Data Short Form PDF 83.99KB 1

    IRFF312, Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRFF312

    Abstract: IRFF313
    Contextual Info: FUT HELD EFFECT POWER TRANSISTOR IRFF312,313 1.15 AMPERES 400, 350 VOLTS Rd S ON = 5.0 Í1 Preliminar/ This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		IRFF312 IRFF31 1RFF31 IRFF313 PDF

    DM 311 BH

    Abstract: BB 313 T-2V07 IRFF310 IRFF312 irf 313
    Contextual Info: SILICONIX INC lflE D f T Silicon îx J-W incorporated • ÔE54735 0014013 7 ■ IRFF310/311/312/313 N-Channel Enhancement Mode Transistors T -2 °l-0 7 TO-2Q5AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR|DSS IRFF310 400 3.6 1.35 IRFF311 350 3.6 1.35 IRFF312


    OCR Scan     		S5473S 1RFF310/311/312/313 T-2V07 O-205AF IRFF310 IRFF311 IRFF312 IRFF313 rff31i DM 311 BH BB 313 irf 313 PDF