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    IRFF311 Search Results

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    IRFF311 Price and Stock

    General Electric Company IRFF311

    TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,1.35A I(D),TO-205AF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFF311 24
    • 1 $8.85
    • 10 $4.425
    • 100 $4.425
    • 1000 $4.425
    • 10000 $4.425
    		Buy Now

    International Rectifier IRFF311

    Trans MOSFET N-CH 350V 5.5A '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IRFF311 163 1
    • 1 $1.74
    • 10 $1.74
    • 100 $1.64
    • 1000 $1.48
    • 10000 $1.48
    		Buy Now

    IRFF311 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFF311 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFF311 General Electric Power MOSFET field effect power transistor. Drain-source voltage 350 V. Scan PDF
    IRFF311 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF311 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    IRFF311 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    IRFF311 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF311 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFF311 Unknown FET Data Book Scan PDF
    IRFF311 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFF311 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    IRFF311R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF311R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFF311R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFF311 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFF311 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V)20 I(D) Max. (A)1.35# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)5.5# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)15# Minimum Operating Temp (øC)-55õ


    Original     		PDF IRFF311

    CMF65-5.556K

    Abstract: No abstract text available
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 27 March 2011. MIL-PRF-19500/556K 27 December 2010 SUPERSEDING MIL-PRF-19500/556J 16 June 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,


    Original     		PDF MIL-PRF-19500/556K MIL-PRF-19500/556J 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, 2N6786U, MIL-PRF-19500. CMF65-5.556K

    2N6782U

    Abstract: 556j 2N6782 2N6784 2N6786 IRFE112 2N6782 equivalent 2N6786U
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 16 September 2009. MIL-PRF-19500/556J 16 June 2009 SUPERSEDING MIL-PRF-19500/556H 12 December 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,


    Original     		PDF MIL-PRF-19500/556J MIL-PRF-19500/556H 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, 2N6786U, MIL-PRF-19500. 2N6782U 556j 2N6782 2N6784 2N6786 IRFE112 2N6782 equivalent 2N6786U

    DD 127 D TRANSISTOR

    Abstract: MARKING CODE 556f 2N6782 2N6782U 2N6784 2N6786
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 March 1998. INCH-POUND MIL-PRF-19500/556F 24 December 1997 SUPERSEDING MIL-S-19500/556E 9 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON


    Original     		PDF MIL-PRF-19500/556F MIL-S-19500/556E 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, 2N6786U DD 127 D TRANSISTOR MARKING CODE 556f 2N6782 2N6782U 2N6784 2N6786

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    IC LM 364 pn

    Abstract: G359 A/M29F002BT(45/55/70/90/IC LM 364 pn
    Text: HE 0 I 4055455 000^302 4 | T - S INTERNATIONAL R E C T I F I E R 7 IÖR IN T E R N A T IO N A L R E C T IF IE R HEXFET f - c Data Sheet No. PD-9.355E TRANSISTORS IRFF31 O IRFF311 N-CHANNEL POWER MOSFETs TÜ-39 PACKAGE IRFF31 2 IRFF313 Features: 400 Volt, 3.6 Ohm HEXFET


    OCR Scan     		PDF IRFF31 IRFF311 IRFF313 G-364 IC LM 364 pn G359 A/M29F002BT(45/55/70/90/IC LM 364 pn

    SMM70N05

    Abstract: irff31z MOD200A SMM11P20 SMM70N10 SMP2P20 251G FF323 IRFF310 SILICONIX 4800
    Text: - H f M tt % ± Vd s or € $ Vg s Vd g V 1R F F 310 IRFF311 IRFF312 IRFF313 1RFF320 IRFF321 IRFF322 IRFF323 IRFF330 IRFF331 IRFF332 IRFF333 IR FF420 IRFF421 IRFF422 IRFF423 IR F M 3 0 IRFF431 IRFF432 IR FF433 IR F F 9 1 10 1R F F 9 1 11 1R F F 9 112 IR FF9113


    OCR Scan     		PDF IRFF310 O-205AF FF312 FF322 FF323 2520P10 SMM60N05 T0-204AE SMM70N05 irff31z MOD200A SMM11P20 SMM70N10 SMP2P20 251G FF323 IRFF310 SILICONIX 4800

    DM 311 BH

    Abstract: BB 313 T-2V07 IRFF310 IRFF312 irf 313
    Text: SILICONIX INC lflE D f T Silicon îx J-W incorporated • ÔE54735 0014013 7 ■ IRFF310/311/312/313 N-Channel Enhancement Mode Transistors T -2 °l-0 7 TO-2Q5AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR|DSS IRFF310 400 3.6 1.35 IRFF311 350 3.6 1.35 IRFF312


    OCR Scan     		PDF S5473S 1RFF310/311/312/313 T-2V07 O-205AF IRFF310 IRFF311 IRFF312 IRFF313 rff31i DM 311 BH BB 313 irf 313

    irf310

    Abstract: irf 3280 IRFF311 IRFF310 IRFF312 IRFF313
    Text: -Standard Power MOSFETs File Number 1888 IRFF310, IRFF311, IRFF312, IRFF313 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF IRFF310, IRFF311, IRFF312, IRFF313 92CS-33741 IRFF313 FF312 irf310 irf 3280 IRFF311 IRFF310 IRFF312

    IRFF312R

    Abstract: IRFF311R IRFF310R IRFF313R
    Text: _ File N u m b er 2032 RuggedPowerMO IRFF310R, IRFF311R, IRFF312R, IRFF313R Avalanche Energy Rated N-Channel Power MOSFETs 1.35A and 1.15A, 350V-400V r0s on = 3.60 and 5.00 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRFF310R, IRFF311R, IRFF312R, IRFF313R 50V-400V 2CS-42SH IRFF312R IRFF313R IRFF311R IRFF310R

    Untitled

    Abstract: No abstract text available
    Text: IRFF310, IRFF311, IRFF312, IRFF313 HARRIS S E M I C O N D U C T O R 1.35A and 1.15A, 350V and 400V, 3.6 and 5.0 Ohm, N-Channel Power MOSFETs July 1998 Description Features 1.35A and 1.15A, 350V and 400V rDS ON = These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFF310, IRFF311, IRFF312, IRFF313 TA17444. RFF313

    IRF09120

    Abstract: 251G FF323 IRFF310 F9122 IRFF130 IRF0120
    Text: - f M % tt ± $ H V ds or € Vg s T a = 2 5 l3 Id Po a Vgs th ) I dss I gs s m tf ï & ï Ds(on) Vd s = ’l ï (V) * /CH * /CH (A) (W) (nA) Vgs (V) C m A) V ds (V) m in max (V) (V) I d (on) C is s g fs Coss C rss $1- B m % V g s =0 (max) Id (mA) ♦ typ


    OCR Scan     		PDF IRFF310 O-205AF FF312 FF322 FF323 25RFF230 IRFF231 IRF09120 251G FF323 IRFF310 F9122 IRFF130 IRF0120

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    9358

    Abstract: 2n6797 2N6781 2N6787 2N6795 IRFF111 IRFF113 IRFF121 IRFF123 IRFF130
    Text: XOR HERMETIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER 2bE D IN TERNATI ONAL RECTIFIER • 4ÔS54S2 OOIOSST □ ■ TO-39 Package T-39-Û3 N-CHANNEL Types Iq cont max 0.18 0.18 0.25 0.3 0.3 0.4 0.6 0.6 0.8 TC - 25°C A 8.0 8.0 7.0 6.0 6.0 5.0 3.5 3.5 3.0 'DM


    OCR Scan     		PDF T-39-Ã IRFF131 2N6795 IRFF133 IRFF121 2N6787 IRFF123 IRFF111 2N6781 IRFF113 9358 2n6797 2N6781 2N6795 IRFF111 IRFF113 IRFF121 IRFF123 IRFF130

    IRFF310

    Abstract: IRFF311
    Text: SOLID STATL bflC D • J aä vh uü i QUQÜ173 d | ~ D T - 3 5 “< r& [FUT FIELD EFFECT POWER TRANSISTOR IRFF310,311 1.35 AMPERES 400, 350 VOLTS r DS ON = 3-6 ß Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology


    OCR Scan     		PDF IRFF310 IRFF311

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan     		PDF

    IRF1401

    Abstract: IRF4311 IRF1501 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221
    Text: C T ’ SiR conix in c o r p o r a te d Industry Standard Commercial MOSFETs Part Number V BR^DSS Id (A rDS(ON) (A) Package Part Number V(BR^[)SS Id (A) rDS(ON) (A) Package IRF1301 100 14 0.18 TO-2G4 IRF432’ 500 4.0 2.0 T0-204 IRF1311 60 14 0.18 T0-204


    OCR Scan     		PDF IRF1301 IRF1311 IRF1321 IRF1331 IRF1401 1RF1411 IRF1421 IRF1431 IRF1501 IRF1511 IRF4311 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221

    ff-310

    Abstract: No abstract text available
    Text: • 4 3 0 2 5 7 1 2 3 H A o o s m y o R R 1 1 3 ■ HAS I S I R F F 3 1 0 / 3 1 1 / 3 1 2 / 3 1 3 I R F F 3 1 O R / 3 1 1 R / 3 1 2 R / 3 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TQ-205AF • 1.35A and 1.15A, 350V - 400V


    OCR Scan     		PDF TQ-205AF IRFF310, IRFF311, IRFF312, IRFF313 IRFF310R, IRFF311R, IRFF312R, IRFF313R 75BVdss ff-310

    IRFF310

    Abstract: IRFF311
    Text: [jagMiìMKS [FIT FIELD EFFECT POWER TRANSISTOR IRFF310,311 1.35 AMPERES 400, 350 VOLTS r DS ON = 3.6 n Preliminary This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRFF310 00A/ais, IRFF311

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


    OCR Scan     		PDF 11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719

    THOMSON DISTRIBUTOR 58e d

    Abstract: 9026873 IRFF121 THOMSON 58E THOMSON 58E CASE OUTLINE THOMSON DISTRIBUTOR 2N6782 IRFF014 IRFF034 IRFF111
    Text: THOMSON/ DISTRIBUTOR HEXFET SñE D • li^ J Rectifier Hermetic Package TO-39 N-Channel Part Number 1 RDS on On-State Resistance (Ohms) Ip Continuous Drain Current 25eC Case (Amps) 1dm Pul» Drain Current (Amps) Pq Max Power Dissipation (Watts) 25 65 15 25


    OCR Scan     		PDF IRFF014 T0-205AF IRFF034 IRFF113 IRFF111 IRFF123 IRFF121 IRFF133 IRFF131 IRFF112 THOMSON DISTRIBUTOR 58e d 9026873 IRFF121 THOMSON 58E THOMSON 58E CASE OUTLINE THOMSON DISTRIBUTOR 2N6782 IRFF034 IRFF111

    Untitled

    Abstract: No abstract text available
    Text: International ï» ! Rectifier HEXFET Power MOSFETs Hermetic Package TO-39 N-Channel Part Number V o s Drain Source Voltage Volts IRFF014 IRFF034 60 IRFF113 IRFF111 IRFF123 IRFF121 IRFF133 IRFF131 &DS(on) On-State Resistance (Ohms) I q Continuous Drain Current


    OCR Scan     		PDF IRFF014 IRFF034 IRFF113 IRFF111 IRFF123 IRFF121 IRFF133 IRFF131 IRFF112 2N6782

    PA 0016 PIONEER

    Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
    Text: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete


    OCR Scan     		PDF J-23548 K28742 PA 0016 PIONEER Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40