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    IRFF31 Price and Stock

    Infineon Technologies AG IRFF311

    - Bulk (Alt: IRFF311)
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    Avnet Americas IRFF311 Bulk 4 Weeks 1
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    Infineon Technologies AG IRFF313

    MOSFET N Channel 350V 1.15A TO-205 - Bulk (Alt: IRFF313)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas IRFF313 Bulk 4 Weeks 1
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    New Jersey Semiconductor Products, Inc. IRFF310

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFF310 5,052 1
    • 1 $19.2
    • 10 $19.2
    • 100 $16.9843
    • 1000 $15.744
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    New Jersey Semiconductor Products, Inc. IRFF312

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFF312 3,663 1
    • 1 $19.2
    • 10 $19.2
    • 100 $16.9843
    • 1000 $15.744
    • 10000 $15.744
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    Vishay Siliconix IRFF313

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    Bristol Electronics IRFF313 500
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    Quest Components IRFF313 3,352
    • 1 $2.325
    • 10 $2.325
    • 100 $2.325
    • 1000 $0.9765
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    Find more IRFF31 price and stock on Findchips.com

    IRFF31 Datasheets (58)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFF310 International Rectifier HEXFET Transistor Original PDF
    IRFF310 Intersil 1.35A, 400V, 3.600 ?, N-Channel Power MOSFET Original PDF
    IRFF310 Semelab N-Channel MOSFET in a Hermetically Sealed TO39 Metal Package Original PDF
    IRFF310 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFF310 General Electric Power MOSFET field effect power transistor. Drain-source voltage 400 V. Scan PDF
    IRFF310 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF310 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    IRFF310 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFF310 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    IRFF310 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF310 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF310 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFF310 Unknown FET Data Book Scan PDF
    IRFF310 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFF310 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    IRFF310R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF310R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFF310R Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFF311 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFF311 General Electric Power MOSFET field effect power transistor. Drain-source voltage 350 V. Scan PDF

    IRFF31 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD - 90425C IRFF310 JANTX2N6786 JANTXV2N6786 REF:MIL-PRF-19500/556 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF310 BVDSS 400V RDS(on) 3.6Ω ID 1.25A  The HEXFET technology is the key to International


    Original     		PDF 90425C IRFF310 JANTX2N6786 JANTXV2N6786 MIL-PRF-19500/556 O-205AF)

    Untitled

    Abstract: No abstract text available
    Text: IRFF311 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V)20 I(D) Max. (A)1.35# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)5.5# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)15# Minimum Operating Temp (øC)-55õ


    Original     		PDF IRFF311

    Untitled

    Abstract: No abstract text available
    Text: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRFF310 Feafares 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET • 1.35A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRFF310

    IRFF310

    Abstract: No abstract text available
    Text: IRFF310 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.


    Original     		PDF IRFF310 O205AF) 11-Oct-02 IRFF310

    Untitled

    Abstract: No abstract text available
    Text: IRFF310 Data Sheet Title FF3 bt 35A 00V, 00 m, an- 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF310 TB334

    Untitled

    Abstract: No abstract text available
    Text: IRFF312 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)1.15# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)4.5# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)15# Minimum Operating Temp (øC)-55õ


    Original     		PDF IRFF312

    Untitled

    Abstract: No abstract text available
    Text: IRFF310 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)1.25 I(DM) Max. (A) Pulsed I(D)800m @Temp (øC)100# IDM Max (@25øC Amb)5.5 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)15# Minimum Operating Temp (øC)-55


    Original     		PDF IRFF310

    IRFF310

    Abstract: TB334
    Text: IRFF310 Data Sheet January 2002 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET Features • 1.35A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF310 IRFF310 TB334

    IRFF310

    Abstract: JANTX2N6786 JANTXV2N6786
    Text: PD - 90425C IRFF310 JANTX2N6786 JANTXV2N6786 REF:MIL-PRF-19500/556 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF310 BVDSS 400V RDS(on) 3.6Ω ID 1.25A  The HEXFET technology is the key to International


    Original     		PDF 90425C IRFF310 JANTX2N6786 JANTXV2N6786 MIL-PRF-19500/556 O-205AF) IRFF310 JANTX2N6786 JANTXV2N6786

    IRFF310

    Abstract: TB334
    Text: IRFF310 Data Sheet March 1999 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET • 1.35A, 400V • rDS ON = 3.600Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    Original     		PDF IRFF310 TB334 TA17444. IRFF310 TB334

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    CMF65-5.556K

    Abstract: No abstract text available
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 27 March 2011. MIL-PRF-19500/556K 27 December 2010 SUPERSEDING MIL-PRF-19500/556J 16 June 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,


    Original     		PDF MIL-PRF-19500/556K MIL-PRF-19500/556J 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, 2N6786U, MIL-PRF-19500. CMF65-5.556K

    IC LM 364 pn

    Abstract: G359 A/M29F002BT(45/55/70/90/IC LM 364 pn
    Text: HE 0 I 4055455 000^302 4 | T - S INTERNATIONAL R E C T I F I E R 7 IÖR IN T E R N A T IO N A L R E C T IF IE R HEXFET f - c Data Sheet No. PD-9.355E TRANSISTORS IRFF31 O IRFF311 N-CHANNEL POWER MOSFETs TÜ-39 PACKAGE IRFF31 2 IRFF313 Features: 400 Volt, 3.6 Ohm HEXFET


    OCR Scan     		PDF IRFF31 IRFF311 IRFF313 G-364 IC LM 364 pn G359 A/M29F002BT(45/55/70/90/IC LM 364 pn

    SMM70N05

    Abstract: irff31z MOD200A SMM11P20 SMM70N10 SMP2P20 251G FF323 IRFF310 SILICONIX 4800
    Text: - H f M tt % ± Vd s or € $ Vg s Vd g V 1R F F 310 IRFF311 IRFF312 IRFF313 1RFF320 IRFF321 IRFF322 IRFF323 IRFF330 IRFF331 IRFF332 IRFF333 IR FF420 IRFF421 IRFF422 IRFF423 IR F M 3 0 IRFF431 IRFF432 IR FF433 IR F F 9 1 10 1R F F 9 1 11 1R F F 9 112 IR FF9113


    OCR Scan     		PDF IRFF310 O-205AF FF312 FF322 FF323 2520P10 SMM60N05 T0-204AE SMM70N05 irff31z MOD200A SMM11P20 SMM70N10 SMP2P20 251G FF323 IRFF310 SILICONIX 4800

    DM 311 BH

    Abstract: BB 313 T-2V07 IRFF310 IRFF312 irf 313
    Text: SILICONIX INC lflE D f T Silicon îx J-W incorporated • ÔE54735 0014013 7 ■ IRFF310/311/312/313 N-Channel Enhancement Mode Transistors T -2 °l-0 7 TO-2Q5AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR|DSS IRFF310 400 3.6 1.35 IRFF311 350 3.6 1.35 IRFF312


    OCR Scan     		PDF S5473S 1RFF310/311/312/313 T-2V07 O-205AF IRFF310 IRFF311 IRFF312 IRFF313 rff31i DM 311 BH BB 313 irf 313

    irf310

    Abstract: irf 3280 IRFF311 IRFF310 IRFF312 IRFF313
    Text: -Standard Power MOSFETs File Number 1888 IRFF310, IRFF311, IRFF312, IRFF313 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF IRFF310, IRFF311, IRFF312, IRFF313 92CS-33741 IRFF313 FF312 irf310 irf 3280 IRFF311 IRFF310 IRFF312

    SMM70N06

    Abstract: SMM70N05 SMP2P20 SMM60N05 SILICONIX 4800 SMM11P20 IBFF333 IRFF313 SMD10P05L IRFF320
    Text: - 324 - f ft A £ Ta=25‘C Vds Vg s or * Vd g Id t M € *± € * IRFF312 IRFF313 IRFF320 IRFF321 IRFF322 IRFF323 IRFF33Q IRFF331 IRFF332 IRFF333 IRFF430 IRFF431 IRFF432 IRFF433 MOD1QOA/B/C MOD200A/B/C MQD400A/B/C MOD5QOA/B/C SMD10P05 SMD10P05L SMD15NQ5


    OCR Scan     		PDF IRFF31Z IRFF313 IRFF320 2020P10 SMM60N05 T0-204AE SMM70N05 O-204AE SMM70N06 SMM70N10 SMP2P20 SILICONIX 4800 SMM11P20 IBFF333 SMD10P05L

    IRFF312R

    Abstract: IRFF311R IRFF310R IRFF313R
    Text: _ File N u m b er 2032 RuggedPowerMO IRFF310R, IRFF311R, IRFF312R, IRFF313R Avalanche Energy Rated N-Channel Power MOSFETs 1.35A and 1.15A, 350V-400V r0s on = 3.60 and 5.00 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRFF310R, IRFF311R, IRFF312R, IRFF313R 50V-400V 2CS-42SH IRFF312R IRFF313R IRFF311R IRFF310R

    IRFF312

    Abstract: IRFF313
    Text: FUT HELD EFFECT POWER TRANSISTOR IRFF312,313 1.15 AMPERES 400, 350 VOLTS Rd S ON = 5.0 Í1 Preliminar/ This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRFF312 IRFF31 1RFF31 IRFF313

    Untitled

    Abstract: No abstract text available
    Text: IRFF310, IRFF311, IRFF312, IRFF313 HARRIS S E M I C O N D U C T O R 1.35A and 1.15A, 350V and 400V, 3.6 and 5.0 Ohm, N-Channel Power MOSFETs July 1998 Description Features 1.35A and 1.15A, 350V and 400V rDS ON = These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFF310, IRFF311, IRFF312, IRFF313 TA17444. RFF313

    IRFF312

    Abstract: IRFF313
    Text: Z t SO LID STATÉ bflc D I 3075001 □□□AT75 4 T-35-JS IT d IRFF312.313 \P\ 1.15 AMPERES 400,350 VOLTS Resechi = 5.0 ft FIELD EFFECT POWER TRANSISTOR Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology


    OCR Scan     		PDF IRFF312 IRFF313

    IRFF310

    Abstract: IRFF311
    Text: [jagMiìMKS [FIT FIELD EFFECT POWER TRANSISTOR IRFF310,311 1.35 AMPERES 400, 350 VOLTS r DS ON = 3.6 n Preliminary This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRFF310 00A/ais, IRFF311

    IRF09120

    Abstract: 251G FF323 IRFF310 F9122 IRFF130 IRF0120
    Text: - f M % tt ± $ H V ds or € Vg s T a = 2 5 l3 Id Po a Vgs th ) I dss I gs s m tf ï & ï Ds(on) Vd s = ’l ï (V) * /CH * /CH (A) (W) (nA) Vgs (V) C m A) V ds (V) m in max (V) (V) I d (on) C is s g fs Coss C rss $1- B m % V g s =0 (max) Id (mA) ♦ typ


    OCR Scan     		PDF IRFF310 O-205AF FF312 FF322 FF323 25RFF230 IRFF231 IRF09120 251G FF323 IRFF310 F9122 IRFF130 IRF0120

    Untitled

    Abstract: No abstract text available
    Text: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical


    OCR Scan     		PDF