IRFF422 Search Results

IRFF420R

Abstract: IRFF421R IRFF422R IRFF423R
Contextual Info: Rugged Power MOSFETs_ IRFF420R, IRFF421R, IRFF422R, IRFF423R File Num ber 2030 Avalanche Energy Rated N-Channel Power MOSFETs 1 .4 A a n d 1 .6 A , 4 5 0 V - 5 0 0 V ros on = 3.00 and 4.00 N-CHANNEL ENHANCEMENT MODE Feature«: • ■ ■

transistor f422

Abstract: f422 IRFF420 IRFF422 IRFF421 IRFF423 RFF422
Contextual Info: Standard Power MOSFETs - IRFF420, IRFF421, IRFF422, IRFF423 File Number N-Channel Enhancement-Mode Power Field-Effect Transistors 1.4A and 1.6A, 450V - 500V r DS on = 3.00 and 4.0fi N-CHANNEL ENHANCEMENT MODE Features: • m m m ■

SMM70N05

Abstract: irff31z MOD200A SMM11P20 SMM70N10 SMP2P20 251G FF323 IRFF310 SILICONIX 4800
Contextual Info: - H f M tt % ± Vd s or € $ Vg s Vd g V 1R F F 310 IRFF311 IRFF312 IRFF313 1RFF320 IRFF321 IRFF322 IRFF323 IRFF330 IRFF331 IRFF332 IRFF333 IR FF420 IRFF421 IRFF422 IRFF423 IR F M 3 0 IRFF431 IRFF432 IR FF433 IR F F 9 1 10 1R F F 9 1 11 1R F F 9 112 IR FF9113

IRFF

Contextual Info: tyvvys S IRFF420, IRFF421, IRFF422, IRFF423 S e m ico n d ucto r y y 1.4A and 1.6A, 450V to 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1,4A and 1,6A, 450V to 500V • High Input Impedance These are N-Channel enhancement mode silicon gate

Contextual Info: h a f r r is IRFF420, IRFF421, IRFF422, IRFF423 1.4A and 1.6A, 450V to 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1 .4A and 1.6A, 450V to 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

F421

Abstract: IRFF420R IRFF421R IRFF422R IRFF423R nanosecond pulse generator avalanche pulse generator
Contextual Info: Rugged Power MOSFETs_ IRFF420R, IRFF421R, IRFF422R, IRFF423R File Number 2030 Avalanche Energy Rated N-Channel Power MOSFETs 1.4 A a n d 1.6 A , 4 5 0 V -5 0 0 V ros on = 3.00 and 4.00 N-CHANNEL ENHANCEMENT MODE Feature«: • Single pulse avalanche energy rated

Contextual Info: IRFF420, IRFF421, IRFF422, IRFF423 S E M I C O N D U C T O R 1.4A and 1.6A, 450V to 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1.4A and 1.6A, 450V to 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRF09120

Abstract: 251G FF323 IRFF310 F9122 IRFF130 IRF0120
Contextual Info: - f M % tt ± $ H V ds or € Vg s T a = 2 5 l3 Id Po a Vgs th ) I dss I gs s m tf ï & ï Ds(on) Vd s = ’l ï (V) * /CH * /CH (A) (W) (nA) Vgs (V) C m A) V ds (V) m in max (V) (V) I d (on) C is s g fs Coss C rss $1- B m % V g s =0 (max) Id (mA) ♦ typ

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

423R

Abstract: f423 IR 423
Contextual Info: 33 HARRIS IR F F420/421/422/423 IR FF420R/421 R /422R /423R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO-205AF • 1.4A and 1.6A, 450V - 500V • rDS on = 3.0(1 and 4.0fi • Singla Pulsa Avalancha Energy Rated* GATE SOURCE

9358

Abstract: 2n6797 2N6781 2N6787 2N6795 IRFF111 IRFF113 IRFF121 IRFF123 IRFF130
Contextual Info: XOR HERMETIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER 2bE D IN TERNATI ONAL RECTIFIER • 4ÔS54S2 OOIOSST □ ■ TO-39 Package T-39-Û3 N-CHANNEL Types Iq cont max 0.18 0.18 0.25 0.3 0.3 0.4 0.6 0.6 0.8 TC - 25°C A 8.0 8.0 7.0 6.0 6.0 5.0 3.5 3.5 3.0 'DM

irf460 to-247

Abstract: IRF450R IRF331R IRF460 IRF840R IRF341R irf362 IRFP450R THOMSON DISTRIBUTOR 58e d irfp462
Contextual Info: THOnSON/ DISTRIBUTOR Power MOSFETs SflE D • T02bñ73 0G0S711 bST ■ T C S K - _ _ Rugged-Series Power MOSFETs — N-Channel continued Package ft JP Maximum Ratinas BV d s S (V) ■d s (A) 'DS(O N) OHMS eAS (mj) 350

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

IRF1401

Abstract: IRF4311 IRF1501 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221
Contextual Info: C T ’ SiR conix in c o r p o r a te d Industry Standard Commercial MOSFETs Part Number V BR^DSS Id (A rDS(ON) (A) Package Part Number V(BR^[)SS Id (A) rDS(ON) (A) Package IRF1301 100 14 0.18 TO-2G4 IRF432’ 500 4.0 2.0 T0-204 IRF1311 60 14 0.18 T0-204

Contextual Info: • 4305271 0 D S m ? 5 JSHARRIS 344 ■ HAS IR FF420/421/422/423 IRFF420R/421R /422R /423R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO-205AF • 1.4A and 1.6A, 450V - 500V • rDS on = 3.0fl and 4.00 • Single Pulse Avalanche Energy Rated*

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y

2N4351 MOTOROLA

Abstract: MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola BC547 MOTOROLA 3SK76
Contextual Info: REPLACEMENTI ALTERNATE SOURCE 2SK355 Part No. Alternate Device 2SK355 Conl'd IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 BUZ42 BUZ74A IRF822 VN0350N5 2SK383 BUZ72 IRF530 2SK385 IRFP340 2SK386 IRFP453 2SK387 IRFP241 2SK388 IRFP351 2SK398 BUZ23 IRF132

THOMSON DISTRIBUTOR 58e d

Abstract: 9026873 IRFF121 THOMSON 58E THOMSON 58E CASE OUTLINE THOMSON DISTRIBUTOR 2N6782 IRFF014 IRFF034 IRFF111
Contextual Info: THOMSON/ DISTRIBUTOR HEXFET SñE D • li^ J Rectifier Hermetic Package TO-39 N-Channel Part Number 1 RDS on On-State Resistance (Ohms) Ip Continuous Drain Current 25eC Case (Amps) 1dm Pul» Drain Current (Amps) Pq Max Power Dissipation (Watts) 25 65 15 25

F422

Abstract: F423 transistor f422 tr f422 F-423 F423A IRFF423 IRFF422 irf 260
Contextual Info: [FîôMl^-KQ [RUT FIELD EFFECT POWER TRANSISTOR IRFF:422,423 1.4 AMPERES 500, 450 VOLTS r DS ON = 4.0 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

f422

Abstract: transistor f422 tr f422 G-377 IRFF423 358E IRFF420 IRFF421 IRFF422 420 Diode 2ba
Contextual Info: HE D I 4055452 INTERNATIONAL 0001400 2 | Data Sheet No. PD-9.358E RECTIFIER INTERNATIONAL RECTIFIER TOR T-39-09 HEXFET TRANSISTORS IRFF4SQ IRFF421 N-CHANNEL POWER MOSFETs TO-3S PACKAGE Q [I IRFF4SS IRFF4S3 500 Volt, 3.0 Ohm HEXFET Features: T he HEXFET® technology is the key to International

Contextual Info: International ï» ! Rectifier HEXFET Power MOSFETs Hermetic Package TO-39 N-Channel Part Number V o s Drain Source Voltage Volts IRFF014 IRFF034 60 IRFF113 IRFF111 IRFF123 IRFF121 IRFF133 IRFF131 &DS(on) On-State Resistance (Ohms) I q Continuous Drain Current

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

PA 0016 PIONEER

Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
Contextual Info: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning: