IXFB Search Results
IXFB Price and Stock
Littelfuse Inc IXFB30N120PMOSFET N-CH 1200V 30A PLUS264 |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
IXFB30N120P | Tube | 545 | 1 |
|
Buy Now | |||||
![]() |
IXFB30N120P | Bulk | 8 Weeks | 300 |
|
Get Quote | |||||
Littelfuse Inc IXFB210N30P3MOSFET N-CH 300V 210A PLUS264 |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
IXFB210N30P3 | Tube | 290 | 1 |
|
Buy Now | |||||
![]() |
IXFB210N30P3 | Bulk | 8 Weeks | 300 |
|
Get Quote | |||||
Littelfuse Inc IXFB60N80PMOSFET N-CH 800V 60A PLUS264 |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
IXFB60N80P | Tube | 264 | 1 |
|
Buy Now | |||||
![]() |
IXFB60N80P | Bulk | 300 |
|
Buy Now | ||||||
![]() |
IXFB60N80P | Bulk | 8 Weeks | 300 |
|
Get Quote | |||||
Littelfuse Inc IXFB132N50P3MOSFET N-CH 500V 132A PLUS264 |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
IXFB132N50P3 | Tube | 261 | 1 |
|
Buy Now | |||||
Littelfuse Inc IXFB82N60PMOSFET N-CH 600V 82A PLUS264 |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
IXFB82N60P | Tube | 225 | 1 |
|
Buy Now | |||||
![]() |
IXFB82N60P | Bulk | 300 |
|
Buy Now | ||||||
![]() |
IXFB82N60P | Bulk | 8 Weeks | 300 |
|
Get Quote |
IXFB Datasheets (35)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXFB100N50P |
![]() |
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 100A PLUS264 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFB100N50Q3 |
![]() |
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 100A PLUS264 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFB110N60P3 |
![]() |
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 110A PLUS264 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFB120N50P2 |
![]() |
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 120A PLUS264 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFB132N50P3 |
![]() |
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 132A PLUS264 | Original | 208.05KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFB150N65X2 |
![]() |
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 150A PLUS264 | Original | 151.87KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFB170N30P |
![]() |
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH TO-264 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFB210N20P |
![]() |
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 210A PLUS264 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFB210N30P3 |
![]() |
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 210A TO-263AA | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFB300N10P |
![]() |
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 300A PLUS264 | Original | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFB30N120P |
![]() |
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 30A PLUS264 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFB38N100Q |
![]() |
TRANS MOSFET N-CH 1000V 38A 3PLUS 264 | Original | 143.03KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFB38N100Q2 |
![]() |
Discrete MOSFETs: HiPerFET Power MOSFETS | Original | 561.59KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFB40N110P |
![]() |
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1100V 40A PLUS264 | Original | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFB40N110Q3 |
![]() |
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 1100V 40A PLUS264 | Original | 143.6KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFB44N100P |
![]() |
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 44A PLUS264 | Original | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFB44N100Q3 |
![]() |
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 44A PLUS264 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFB 50N80Q2 |
![]() |
TRANS MOSFET N-CH 800V 50A 3PLUS 264 | Original | 567.98KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFB50N80Q2 |
![]() |
Discrete MOSFETs: HiPerFET Power MOSFETS | Original | 567.99KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFB50N80Q2 |
![]() |
HiPerFET Power MOSFET | Original | 181.01KB | 4 |
IXFB Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
IXFB100N50Contextual Info: Advance Technical Information IXFB100N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr = = ≤ ≤ 500V 100A Ω 49mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
Original |
IXFB100N50Q3 250ns PLUS264TM 100N50Q3 IXFB100N50 | |
IXFB120N50P2Contextual Info: IXFB120N50P2 Polar2TM HiPerFETTM Power MOSFET VDSS ID25 RDS on = 500V = 120A ≤ 43mΩ Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS264TM Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ |
Original |
IXFB120N50P2 PLUS264TM 120N50P2 2-10-A IXFB120N50P2 | |
Contextual Info: HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on trr IXFB50N80Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr = = ≤ ≤ 800V 50A Ω 160mΩ 300ns PLUS264 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
Original |
IXFB50N80Q2 300ns PLUS264 50N80Q2 1-18-10-C | |
IXFB40N110P
Abstract: IXFB 40N110P 40n110p F40N
|
Original |
IXFB40N110P 300ns PLUS264TM 40N110P 3-28-08-A IXFB40N110P IXFB 40N110P F40N | |
100N50P
Abstract: mosfet IXFB 100n50p IXFB100N50P 100N50 NS1250
|
Original |
100N50P 100N50P mosfet IXFB 100n50p IXFB100N50P 100N50 NS1250 | |
IXFB80N50Q2
Abstract: 80N50Q2
|
Original |
IXFB80N50Q2 250ns PLUS264TM( 80N50Q2 7-20-07-F IXFB80N50Q2 | |
70n60
Abstract: IXFB70N60Q2
|
Original |
70N60Q2 264TM 728B1 70n60 IXFB70N60Q2 | |
Contextual Info: Preliminary Technical Information IXFB210N30P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = 300V 210A 14.5m 250ns PLUS264TM Symbol Test Conditions Maximum Ratings |
Original |
IXFB210N30P3 250ns PLUS264TM 100ms 210N30P3 | |
Contextual Info: IXFB300N10P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = 100V 300A 5.5m 200ns PLUS264TM Symbol Test Conditions VDSS VDGR TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M |
Original |
IXFB300N10P 200ns PLUS264TM 100ms 300N10P | |
38N100Q
Abstract: 98949
|
Original |
38N100Q 264TM 150ited 728B1 38N100Q 98949 | |
Contextual Info: HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr IXFB70N60Q2 N-Channel Enhancement Mode Avalanche Rated, Low QG, Low Intrinsic RG High dv/dt, Low trr 600V 70A Ω 88mΩ 250ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C |
Original |
IXFB70N60Q2 250ns PLUS264TM 70N60Q2 8-08-A | |
Contextual Info: HiPerFETTM Power MOSFETs VDSS = ID25 = RDS on ≤ ≤ trr IXFB80N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 500V 80A Ω 60mΩ 250ns PLUS264TM( IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C |
Original |
IXFB80N50Q2 250ns PLUS264TM( 80N50Q2 7-20-07-F | |
Contextual Info: VDSS ID25 IXFB52N90P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 900V 52A Ω 160mΩ 300ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ |
Original |
IXFB52N90P 300ns PLUS264TM 52N90P | |
Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFB300N10P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 100V 300A Ω 5.5mΩ 200ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings |
Original |
IXFB300N10P 200ns PLUS264TM 100ms 300N10P | |
|
|||
Contextual Info: HiPerFETTM Power MOSFETs IXFB 72N55Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 550 V ID25 = 72 A Ω RDS on = 72 mΩ ≤ 250 ns trr Preliminary Data Sheet PLUS 264TM (IXFB) Symbol Test Conditions |
Original |
72N55Q2 264TM 728B1 123B1 728B1 065B1 | |
50n80
Abstract: 50N80Q2 50n8 IXFB 50N80Q2 IXFB50N80Q2 50N80Q
|
Original |
50N80Q2 264TM 728B1 50n80 50N80Q2 50n8 IXFB 50N80Q2 IXFB50N80Q2 50N80Q | |
DS100341
Abstract: PLUS264TM
|
Original |
IXFB62N80Q3 300ns PLUS264TM 62N80Q3 DS100341 | |
Contextual Info: Advance Technical Information HiPerFET TM Power MOSFETs VDSS = ID25 = RDS on = ≤ trr IXFB 80N50Q Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 500 V 80 A Ω 55 mΩ 250 ns PLUS 264TM (IXFB) Symbol Test Conditions |
Original |
80N50Q 264TM 728B1 | |
38N100Q2Contextual Info: Advance Technical Information HiPerFET TM Power MOSFETs IXFB 38N100Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr = 1000 V V DSS ID25 = 38 A RDS on = 0.26 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions |
Original |
38N100Q2 264TM 728B1 38N100Q2 | |
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFB 100N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 500 V VGSS |
Original |
100N50P PLUS264TM | |
Contextual Info: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET VDSS ID25 IXFB210N30P3 RDS on trr = = ≤ ≤ 300V 210A Ω 14.5mΩ 250ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS |
Original |
IXFB210N30P3 250ns PLUS264TM 100ms 210N30P3 | |
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFB 82N60P VDSS = 600 V ID25 = 82 A RDS on ≤ 75 mΩ Ω ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ |
Original |
82N60P PLUS264TM | |
IXFB
Abstract: 50N80Q2 IXFB50N80Q2 50n80
|
Original |
50N80Q2 264TM IXFB 50N80Q2 IXFB50N80Q2 50n80 | |
Contextual Info: Preliminary Technical Information IXFB110N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = 600V 110A 56m 250ns PLUS264TM Symbol Test Conditions Maximum Ratings |
Original |
IXFB110N60P3 250ns PLUS264TM 110N60P3 |