KM48S8030B Search Results

KM48S8030BT

Contextual Info: KM48S8030B CMOS SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM48S8030B is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG'S high performance CMOS technol­

KM48S8030BT

Contextual Info: KM48S8030B CMOS SDRAM Revision History Revision .3 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .4 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.

Contextual Info: KM48S8030B CMOS SDRAM Revision History Revision .3 N ovem ber 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not m eet PC100 characteristics . So AC param eter/C haracteristics have changed to 64M 2nd values. Revision .4 (February 1998) - Input leakage C urrents (Inputs / DQ) are changed.

KM48S8030BT

Contextual Info: KM48S8030B CMOS SDRAM Revision History Revision .3 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .4 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.

Contextual Info: KMM466S823BT2 144pin SDRAM SODIMM Revision History R evision .2 M arch 1998 Som e Param eter values & C hracteristics of comp, level are changed as below : - Input leakage Currents (Inputs) : ± 5uA to ± 1 uA. Input leakage Currents (I/O) : ± 5uA to ± 1,5uA.

Contextual Info: PC66 SDRAM MODULE KMM374S1623BTL Revision History Revision .3 March 1998 Som e Param eter value s & C haracteristics of com p, level are changed as below : - Input leakage currents (Inputs) : ± 5 u A to ±1uA. - Input leakage currents (I/O) : ± 5 u A to ± 1 ,5uA.

Contextual Info: KMM374S1623BT PC100 SDRAM MODULE Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. I IL(Inputs) : ± 5uA to ± 1uA, I IL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T A = 23°C, f = 1MHz, V REF =1.4V ± 200 mV.

Contextual Info: KMM374S1 623BT PC100 SDR AM M O D U L E Re vis ion Hist ory Revision .0 February 1998 -Input leakage Currents (Inputs / DQ) of Component level are changed. llL(lnputs) : ± 5uA to ± 1uA, llL(DQ) : ± 5uA to ± 1.5uA. -C in to be measured at V DD = 3.3V, T a = 23°C, f = 1MHz, V

Contextual Info: KMM366S823BTL PC66 SDRAM MODULE KMM366S823BTL SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx8,4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S823BTL is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: SDRAM MODULE Preliminary KMM377S823BT1 Revision History Revision 3 May 1998 - CLK Input Cap. is added by PLL Input Cap. (24pF) Revision 4 (July 1998) - "REGE" description is changed. Revision 5 (Aug. 1998) - Package Dimension changed. REV. 5 Aug. 1998 Preliminary

KM48S8030

Abstract: KMM350S823BT1-GL
Contextual Info: SDRAM MODULE Preliminary KMM350S823BT1 Revision History Revision 3 July 1998 - "REGE" description is changed. Revision 4 ( Aug. 1998) - Package Dimension changed REV. 4 Aug. 1998 Preliminary KMM350S823BT1 SDRAM MODULE KMM350S823BT1 SDRAM DIMM (Intel 1.0 ver. Base)

KM48S8030BT-G10

Abstract: KM48S8030BT KM48S8030BT-G
Contextual Info: KMM374S823BTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.

KMM375S1723T-G0

Abstract: KMM375S1723T-G8 KMM375S1723T-GH KMM375S1723T-GL
Contextual Info: Preliminary KMM375S1723T SDRAM MODULE KMM375S1723T SDRAM DIMM 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM375S1723T is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM375S1723T consists of nine CMOS 16Mx8 bit

KMM377S823CT1-G8

Abstract: KMM377S823CT1-GH KMM377S823CT1-GL
Contextual Info: Preliminary KMM377S823CT1 SDRAM MODULE KMM377S823CT1 SDRAM DIMM Intel 1.0 ver. Base 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S823CT1 is a 8M bit x 72 Synchronous

Contextual Info: Preliminary PC66 SDRAM MODULE KMM374S1623CTL KMM374S1623CTL SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S1623CTL is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: 144pin SDRAM SODIMM KMM466S823BT3 KMM466S823BT3 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S823BT3 is a 8M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung

KMM374S1623BTL

Abstract: KMM374S1623BTL-G0
Contextual Info: KMM374S1623BTL PC66 SDRAM MODULE KMM374S1623BTL SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S1623BTL is a 16M bit x 72 Synchro­ nous Dynamic RAM high density memory module. The Samsung

Contextual Info: PC100 SDRAM MODULE KMM366S1623BT Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Com ponent level are changed. In(lnputs) : ± 5uA to ± 1 u A , - Cin to be measured at V dd I il (DQ) : ± 5uA to ± 1.5uA. = 3.3V, T a = 23°C, f = 1 MHz, V

Contextual Info: SDRAM MODULE Preliminary KMM377S823BT1 Revision History Revision 3 May 1998 - CLK input Cap. is added by PLL Input Cap. (24pF) Revision 4 (July 1998) - "REGE" description is changed. REV. 4 July 1998 ELECTRG&HCS Preliminary KMM377S823BT1 SDRAM MODULE KMM377S823BT1 SDRAM DIMM (Intel 1.0 ver. Base)

KM48S8030BT-GL

Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
Contextual Info: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.

Contextual Info: KMM366S1623BT PC100 SDR AM M O D U L E Re vis ion Hist ory Revision .0 February 1998 -Input leakage Currents (Inputs / DQ) of Component level are changed. llL(lnputs) : ± 5uA to ± 1uA, llL(DQ) : ± 5uA to ± 1.5uA. -C in to be measured at V DD = 3.3V, T a = 23°C, f = 1MHz, V

KMM366S1623BT-GL

Contextual Info: KMM366S1623BT PC100 SDRAM MODULE KMM366S1623BT SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1623BT is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: KM M 4 6 6 S 8 2 3 B T 2 144pm S D R A M S O D IM M Revision History R evision .2 M arch 1998 • Some Parameter values & Chracteristics of comp, level are changed as below : -In p u t leakage Currents (Inputs) : ± 5uA to ± 1uA. Input leakage Currents (I/O) : ± 5uA to ± 1.5uA.

KMM374S823BT-GL

Abstract: KMM374S823BT-G8 KMM374S823BT-GH KM48S8030BT-G MV 42H
Contextual Info: KMM374S823BT PC100 SDRAM MODULE Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. IIL(Inputs) : ± 5uA to ± 1uA, IIL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV.