KM616V4000B Search Results

Contextual Info: Preliminary CMOS SRAM KM616V4000BZ, KM616U4000BZ Family Document Title 256Kx16 Low Voltage & Low Power SRAM Datasheets for 48-CSP Revision History Revision No History Draft Data Remark 0.0 Initial draft February 4,1997 Prelim inary 0.1 Revised - Change datasheet format

KM616V4000BL-L

Abstract: KM616U4000B
Contextual Info: Back KM616V4000B, KM616U4000B Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996

Contextual Info: Preliminary CMOS SRAM KM616V4000BZ, KM616U4000BZ Family Document Tills 256Kx16 Low Voltage & Low Power SRAM Datasheets for 48-CSP Revision History Revision No History Draft Data Remark 0.0 Initial draft February 4,1997 Prelim inary 0.1 Revised - Change datasheet form at

Contextual Info: KM616V4000B, KM616U4000B Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996 Preliminary

KM68U4000A

Contextual Info: KM616V4000B, KM616U4000B Family CMOS SRAM 256Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4|jm CMOS • Organization : 256Kx16 • Power Supply Voltage KM68V4000A Family : 3.3 ± 0.3V KM68U4000A Family : 3.0 ± 0.3V

Contextual Info: Preliminary CMOS SRAM KM616V4000BZ, KM616U4000BZ Family Document Title 256Kx16 Low Voltage & Low Power SRAM Datasheets for 48-CSP Revision History History Draft Data Remark 0.0 Initial draft February 4,1997 Preliminary 0.1 Revised - Change datasheet format

SRAM_256KX16

Abstract: KM616U4000B KM616U4000C CMOS Process Family SRAM256KX16 data retention TSOP2-400F
Contextual Info: KM616V4000B/C, KM616U4000B/C CMOS SRAM 256Kx16 bit Low Power and Low Voltage • Process Technology : TFT • Organisation : 256K x16 • Power Supply Voltage KM68V4000B/C Family : 3.0~3.6V KM68U4000B/C Family : 2.7~3.3V • Low Data Retention Voltage : 2V Min

Contextual Info: Preliminary CMOS SRAM KM616V4000BZ, KM616U4000BZ Family Document Title 256Kx16 Low Voltage & Low Power SRAM Datasheets for 48-CSP Revision History Revision No History Draft Data Remark 0.0 Initial draft February 4th 1997 Preliminary 0.1 Revised - Change datasheet format

data retention

Contextual Info: Preliminary KM616V4000BZ, KM616U4000BZ Family_ CMOS SRAM 256Kx16 Low Power and Low Voltage CMOS Static RAM with 48-CSP Chip Scale Package FEATURES G EN ERA L DESCRIPTION • Process Technology : 0.4^m CMOS • Organization :256Kx16 • Power Supply Voltage

Contextual Info: KM616V4000B, KM616U4000B Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft June 28th 1996 Advance 0.1 Revise - Die name change ; A to B Septem ber 19th 1996

KM616U4000BLTI-8L

Abstract: KM616U4000B
Contextual Info: KM616V4000B, KM616U4000B Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996

Contextual Info: KM6164000B Family CMOS SRAM 256Kx16 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM616V4000B family is fabricated by SAMSUNG'S Process Technology : 0.4* • CMOS Organization : 256Kx16 Power Supply Voltage : Single 5V •• 10% Low Data Retention Voltage : 2V Min

KM616V4000BLTI-8L

Contextual Info: KM616V4000B, KM616U4000B Family CMOS SRAM 256Kx16 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4um CMOS • Organization: 256Kx16 • Power Supply Voltage KM68V4000B Family: 3.3±0.3V KM68U4000B Family : 3.0±0.3V

Contextual Info: KM6164000B Family CMOS SRAM 256KX16 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION • • . • • . The KM616V4000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family supports var­ ious operating temperature ranges and small package types for

lcd m278

Abstract: 64GS24 M339 m329 lcd marking M117 motorola m120 m131 m233 M317 M346
Contextual Info: MMCPFB1200 Platform Board User’s Manual Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out of the application or use of any product or circuit described herein;

Contextual Info: K6T4016V3B, K6T4016U3B Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change: A to B September 19, 1996 Preliminary

Contextual Info: K M 6 8 V 4 0 0 0 B , K M 6 8 U 4 0 0 0 B Fami l y CM OS SRAM P a c u r o e n ! Title 51 2 K x 8 bit L o w P o w e r and L o w Vo l t a g e C M O S Static R A M R e v is io n H a s ta r'y R e v is io n N o . H is to ry D ra ft D ata R e m a rk 0.0 Initial d ra ft

KM736V789T-60

Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
Contextual Info: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L

Contextual Info: CMOS SRAM KM6164000B Family S sêujuêûL ü Mê 256Kx16 bit Low Power CMOS Static RAM R p v i< « io n ^ y g gyffl g 8 g H iQg,tn s r f ftr v y ä 8 ft Revision No. History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B

KM6164000B

Abstract: KM6164000BLI-L KM6164000BL-L KM6164000BLT-5L KM6164000BLT-7L
Contextual Info: KM6164000B Family CMOS SRAM 256Kx16 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION Process Technology : 0.4* • CMOS Organization : 256Kx16 Power Supply Voltage : Single 5V •• 10% Low Data Retention Voltage : 2V Min Three state output and TTL Compatible

KM736V789-60

Abstract: 512k*8 sram KM68U4000A
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Tree - 13 2. Product G uid e- 23 3. Ordering Information - 30 II.SRAM DATA SHEET Law Power SRAM 5.0V Operation 1. KM622S6C Family 32Kx8 Commercial, Extended, Industrial Products -

Contextual Info: CMOS SRAM KM6164000B Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B Septem ber 19, 1996 Prel imi nary 1.0 Finalize December 17,1996

nc10 samsung

Abstract: 278R33 78R33 SP232 RPACK 10k x 9 29EE010 1C651 samsung lcd JTAG nc10 samsung power PP36
Contextual Info: E D C B A SNDS200 Board Ver2.0 NetMCU : S3C4520A DRAM HDLC - 8MB SDRAM - EDO Support - 1 Bank - MCU Input Clock(10MHz) - USB Input Clock(10MHz) - FilterLogic Page2 ROM - 1 Channel RS232 I/F - 1 Channel V.35 I/F - DSUB25 Conn Page3 Page4 hdlc nDTRB nRTSB

KM6164000B

Abstract: KM6164000BLI-L KM6164000BL-L KM6164000BLTI10L KM6164000BLTI-7L
Contextual Info: CMOS SRAM KM6164000B Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996 Preliminary 1.0 Finalize December 17, 1996