M28F256 Search Results

AS263

Abstract: 271066 l213d
Contextual Info: INTEL CORP UP/PRPHLS ' EQE |) • 4fi2bl7S OOfilSS? T ■ ¡ n y * M28F256 n?4(eHV2.7 256K (32K x 8) CMOS FLASH MEMORY M ilitary a Flash Electrical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface

M28F256

Abstract: PDIP32 PLCC32
Contextual Info: M28F256 256 Kbit 32Kb x8, Bulk Flash Memory DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical

1N914

Abstract: M28F256 PDIP32 PLCC32 memory write protect m28f512
Contextual Info: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE

2SF256

Abstract: M28F256A
Contextual Info: rz7 SCS-THOMSON M28F256A CMOS 256K 32K x 8 FLASH MEMORY * FAST ACCESS TIME: 100ns • LOW POWER CONSUMPTION - Standby Current: 200|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMING TIME 10jas (PRESTO F ALGORITHM)

Contextual Info: / = T SGS-THOMSON M28F256 ^ 7 # » M g [* 0 J « ô [* S 256K (32K x 8, Bulk Erase) FLASH MEMORY DATA BRIEFING • ■ ■ • ■ ■ 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10us typical ELECTRICAL CHIP ERASE in 1s RANGE

M28F256A

Contextual Info: SGS-mOMSON RíilD g[S [l[L[I(gTriS(0 R!lD(gi M28F256A CMOS 256K (32K x 8, Chip Erase) FLASH MEMORY ABBREVIATED DATA FAST ACCESS TIME: 120ns LOW POWER CONSUMPTION - Standby Current: 200nA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10jis

M28F102

Abstract: PLCC32 package M28F101 M28F256 PLCC32 QRFL9812 quality control procedure st
Contextual Info: QRFL9812 QUALIFICATION REPORT M28F256 T5-U20: 256 Kbit x8 Dual Supply Flash Memory INTRODUCTION The M28F256 is a 256 Kbit Dual Supply (5V/12V) Flash memory organized as 32 KByte of 8 bits each. It is offered in PLCC32 packages. The M28F256 is manufactured with the STMicroelectronics advanced CMOS 0.8 micron T5-U20 (-20%

1N914

Abstract: M28F256 PDIP32 PLCC32 BP-DIP32
Contextual Info: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE

1N914

Abstract: M28F256 PDIP32 PLCC32
Contextual Info: M28F256 256 Kbit 32Kb x8, Bulk Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE IN 1s RANGE LOW POWER CONSUMPTION – Standby Current: 5µA typical 10,000 ERASE/PROGRAM CYCLES

Contextual Info: rrz SGS-THOMSON M28F256 * 7 # . IM g[s3 i[Li(gTnS©l i!IO(gi CMOS 256K (32K x 8, Chip Erase) FLASH MEMORY ABBREVIATED DATA FAST ACCESS TIME: 120ns 1,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 100ns (PRESTO F PROGRAMMING)

M28F256A

Abstract: M28F256 PDIP32 PLCC32
Contextual Info: ¿ = 7 S C S -TH O M S O N “ 7 # M28F256 ^ D lE S Œ tIl(g ¥ ^ (s )iD © i CMOS 256K (32K x 8) FLASH MEMORY • FAST ACC ESS TIME: 100ns ■ 1,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMM ING TIME 100ns (PRESTO F PROGRAMMING)

Contextual Info: /S T S G S -T H O M S O N * 7 # . HO @l EILi(gTO®R!lö(gi M28F256 256K (32K x 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Standby Current: lOOpA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMMING TIME 10>is

28F256 CMOS FLASH

Contextual Info: SGS-THOMSON M28F256 1ILG 256K 32 x 8 CMOS FLASH MEMORY ADVANCE DATA • FLASH ELECTRICAL CHIP ERASE IN 1 SEC­ OND RANGE. ■ PRESTO F PROGRAMMING TYPICAL BYTE PROGRAM TIME : 100 jus. ■ 12 V VPP SUPPLY. ■ 100 TO 10.000 ERASE/PROGRAM CYCLES. ■ VERY FAST ACCESS TIME : 100 ns.

TI7B

Abstract: M28F256 PLCC32
Contextual Info: / 3 T S G S -T H O M S O N M28F256 * J M , HD g»ilLli(g lii!lD i 256K (32K x 8, Chip Erase FLASH M E M O R Y • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Standby Current: 200pA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE

TB13A

Abstract: intel 28F256 27F256 27108 80C186 A12E AP-316 M28F256
Contextual Info: I NT E L ¡ n CORP UP/PRPHLS ' EQE |) • 4fi2bl7S OOfilSS? T ■ y * M28F256 n?4(eHV2.7 256K (32K x 8) CMOS FLASH MEMORY M ilitary a Flash Electrical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface

28f256

Contextual Info: /= 7 S G S -TH O M S O N M28F256 dD g^ [iLi(gir (Q iD(gi CMOS 256K (32K x 8, Chip Erase) FLASH MEMORY • FAST ACCESS TIME: 120ns ■ 1,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMMING TIME 100|is (PRESTO F PROGRAMMING) ■ ELECTRICAL CHIP ERASE IN 1s RANGE

Contextual Info: / U T SGS-THOMSON *7 # M28F256 i]D g ® iL i© ir ® © [iO (g i CMOS 256K (32K x 8 FLASH MEMORY FAST ACCESS TIME: 100ns 1,000 ERASE/PROGRAM CYCLES 12V PROGRAMM ING VOLTAGE TYPICAL BYTE PROGRAMM ING TIM E 100us (PRESTO F PROGRAMMING) ELECTRICAL CHIP ERASE IN 1s RANGE

Contextual Info: M28F256 256 Kbit 32Kb x8, Bulk Erase Flash Memory • ■ ■ ■ ■ ■ ■ ■ ■ ■ 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 10|is typical ELECTRICAL CHIP ERASE IN 1s RANGE LOW POWER CONSUMPTION

M28F256A

Abstract: FZJ 101 1N914
Contextual Info: - i q f a - y g o £ = 7 S G S -1 H O M S O N D l@IILIÊÏ @R!10 êi M28F256A CMOS 256K (32K x 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 120ns ■ LOW POWER CONSUMPTION - Standby Current: 200pA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE

Contextual Info: S G S -1 H 0 M S 0 N M28F256 IfflD Ig ^ O IIL iC T lS ìO lfflD Ig i 256K 32K x 8, Chip Erase FLASH MEMORY PRELIMINARY DATA • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Standby Current: 200pA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE

Contextual Info: / = 7 ^7 # S G S - T H O M S O N M28F256A R { flD g [S ® i[L i(Ä ® R D D i CMOS 256K (32K x 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 120ns ■ LOW POWER CONSUMPTION - Standby Current: 200|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE

TSOP32 FOOTPRINT

Abstract: M28F101 M29F010B
Contextual Info: AN1251 APPLICATION NOTE Replacing the M28F256, M28F512 and M28F101 with the M29F512B and M29F010B Flash Memories CONTENTS • INTRODUCTION ■ HARDWARE COMPATIBILITY ■ SOFTWARE UPGRADE ■ OTHER CONSIDERATIONS ■ CONCLUSION INTRODUCTION This application note will help you to replace the M28F256,

ah rzj

Abstract: 1N914 M28F256 Scans-005192 A0-A14
Contextual Info: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 90ns • LOW POWER CONSUMPTION - Standby Current: 100pA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMMING TIME 10us (PRESTO F ALGORITHM) ■ ELECTRICAL CHIP ERASE IN 1s RANGE

IC1210

Abstract: M28F256 PLCC32 QR108 TR08
Contextual Info: QUALIFICATION REPORT M28F256 256K 32K x 8 CMOS T5-U20 FLASH MEMORY in PLCC32 INTRODUCTION The M28F256 is a 256K FLASH Memory organised as 32K x 8 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5-U20 (-20% upgrade) process which has been especially developed