MA704A Search Results

MA151K

Abstract: ma5z270 ma151 OH009 VHE HALL AMA950 AMA997 AMA999 MA704A MA8056
Contextual Info: Diodes Composite Elements , Hall Elements • Composite Elements Type No. Vr If (V) (mA) VF max. Co typ. If (V) Vr (PF) (mA) 3 0 /4 0 A M A 999 3 0 /1 0 0 1.0 P ack ag e t|T typ. (ns) B asic Type No. If 1.5 30 No. (mA) (V) 1.0 1.0 MA704A MA151K 10 Mini Type (4 pins)

kt 207

Abstract: ma741 MA723 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713
Contextual Info: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA £ tt B aL B ÍL B Ä B Ä fôT fóT t&T « Yrrm Vr V (V) 30 tôT MA723 MA724 MA726 MA727 MA728 » T fâT

ma741

Abstract: MA723 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700
Contextual Info: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA £ tt B aL B ÍL B Ä B Ä fôT fóT t&T « Yrrm Vr V (V) 30 tôT MA723 MA724 MA726 MA727 MA728 » T fâT

MA717

Abstract: MA723 ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713
Contextual Info: - Ä fií H SSlOl HS S 1 0 2 H SU88 H SU276 MA2S728 MA2S784 MA4S713 M A 700 MA700A MA 704 MA704A MA704WA MA704WK M A 707 M A 713 MA714 M A 715 M A 716 M A 717 MA717WA £ tt Vr V (V) 30 30 70 10 3 30 30 30 15 30 15 30 30 15 30 15 30 B aL B ÍL B Ä B Ä fôT

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X704 (MA704), MA3X704A (MA704A) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65)

MA3X704

Abstract: MA3X704A MA704 MA704A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X704 (MA704), MA3X704A (MA704A) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 M Di ain sc te on na tin nc ue e/ d 0.16+0.10

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741 (MA741) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ M Di ain sc te on na tin nc ue e/ d • Mini type of MA3X704A (MA704A)

MA3X704A

Abstract: MA6X718 MA704A MA718
Contextual Info: Schottky Barrier Diodes SBD MA6X718 (MA718) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Three isolated elements are contained in one package, allowing high-density mounting • Two MA3X704A (MA704A) is contained in one package (of a

MA3J741

Abstract: MA3X704A MA704A MA741
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741 (MA741) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Mini type of MA3X704A (MA704A) • Low forward voltage VF and good wave detection efficiency η

Contextual Info: Schottky Barrier Diodes SBD MA3J741 (MA741) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 5° 1.25±0.1 2.1±0.1 • Mini type of MA3X704A (MA704A) • Low forward voltage VF and good wave detection efficiency η • Small temperature coefficient of forward characteristic

marking m1k

Contextual Info: Schottky Barrier Diodes SBD MA3X704, MA3X704A (MA704, MA704A) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low forward voltage VF and good wave detection efficiency η

MA723

Abstract: ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700
Contextual Info: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA £ tt B aL B ÍL B Ä B Ä fôT fóT t&T « Yrrm Vr V (V) 30 tôT MA723 MA724 MA726 MA727 MA728 » T fâT

MA723

Abstract: ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700
Contextual Info: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA £ tt B aL B ÍL B Ä B Ä fôT fóT t&T « Yrrm Vr V (V) 30 tôT MA723 MA724 MA726 MA727 MA728 » T fâT

610A

Abstract: MA723 ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713
Contextual Info: - Ä fií H SSlOl HS S 1 0 2 H SU88 H SU276 MA2S728 MA2S784 MA4S713 M A 700 MA700A MA 704 MA704A MA704WA MA704WK M A 707 M A 713 MA714 M A 715 M A 716 M A 717 MA717WA £ tt Vr V (V) 30 30 70 10 3 30 30 30 15 30 15 30 30 15 30 15 30 B aL B ÍL B Ä B Ä fôT

MA704

Abstract: MA3X704 MA3X704A MA704A diode M1K
Contextual Info: Schottky Barrier Diodes SBD MA3X704 , MA3X704A (MA704,MA704A) Silicon epitaxial planar type Reverse voltage (DC) MA3X704 Peak reverse voltage MA3X704 Unit VR 15 V 15 IFM 150 mA Forward current (DC) IF 30 mA Junction temperature Tj 125 °C Storage temperature

MA3J745

Abstract: MA3X704A MA704A MA745
Contextual Info: Schottky Barrier Diodes SBD MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 5° 1.25±0.1 2.1±0.1 • Low forward voltage VF , optimum for low voltage rectification • Low VF type of MA3X704A (MA704A)

Contextual Info: MA111 Schottky Barrier Diodes SBD MA732 Silicon epitaxial planer type Unit : mm For the switching circuit For wave detection circuit Anode Low forward rise voltage VF, optimum for low-voltage rectification (Low VF type of MA704A) 1 2 Fast reverse recovery time trr, optimum for high-frequency rectification

electronic power generator using transistor

Abstract: Japanese Transistor Data Book diode 104 MA3J745 MA3X704A MA704A MA745
Contextual Info: Schottky Barrier Diodes SBD MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward voltage VF , optimum for low voltage rectification • Low VF type of MA3X704A (MA704A) • Optimum for high frequency rectification because of its short

MA3X704

Abstract: MA3X704A MA704 MA704A
Contextual Info: Schottky Barrier Diodes SBD MA3X704 (MA704), MA3X704A (MA704A) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low forward voltage VF and good wave detection efficiency η

MA723

Abstract: ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700
Contextual Info: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA MA717H MA721 MA721WA MA721M MA722 MA723 MA724 MA726 MA727 MA728 £ tt Vr V (V) B aL B ÍL B Ä B Ä fôT fóT

marking M1P

Contextual Info: Panasonic Schottky Barrier Diodes SBD MA714 Silicon epitaxial planer type For the switching circuit For wave detection circuit • Features • Two elements are incorporated in MA704A (of a type differing in direction) • Low forward rise voltage Vf , optimum for low-voltage rectification

Contextual Info: Schottky Barrier Diodes SBD MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 5° 1.25±0.1 2.1±0.1 • Low forward voltage VF , optimum for low voltage rectification • Low VF type of MA3X704A (MA704A)

MA3X704

Abstract: MA3X704A MA704 MA704A
Contextual Info: Schottky Barrier Diodes SBD MA3X704, MA3X704A (MA704, MA704A) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low forward voltage VF and good wave detection efficiency η

MA3X704A

Abstract: MA6X718 MA704A MA718
Contextual Info: Schottky Barrier Diodes SBD MA6X718 (MA718) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Features 3 2 1 (0.65) • Three isolated elements are contained in one package, allowing high-density mounting • Two MA3X704A (MA704A) is contained in one package (of a