MA2S784 Search Results
MA2S784 Price and Stock
Panasonic Electronic Components MA2S7840GLDIODE SCHOT 30V 100MA SSMINI2-F4 |
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MA2S7840GL | Cut Tape |
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Panasonic Electronic Components MA2S78400LDIODE SCHOTT 30V 100MA SSMINI2F1 |
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MA2S78400L | Digi-Reel | 1 |
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MA2S784 Datasheets (7)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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MA2S784 |
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Silicon epitaxial planar type | Original | |||
MA2S784 |
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Diode | Original | |||
MA2S784 |
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Silicon Epitaxial Planar Type Schottky Barrier Diode (SBD) | Original | |||
MA2S784 | Unknown | The Diode Data Book with Package Outlines 1993 | Scan | |||
MA2S784 | Unknown | High Frequency Device Data Book (Japanese) | Scan | |||
MA2S78400L |
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Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 0.1A SSMINI2 | Original | |||
MA2S7840GL |
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Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 0.1A SSMINI2 | Original |
MA2S784 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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kt 207
Abstract: ma741 MA723 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713
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OCR Scan |
HSS102 HSU88 HSU276 30MHz) MA2S784 MA4S713 81MIN 26MAX fiJ44 kt 207 ma741 MA723 420C 610C | |
ma741
Abstract: MA723 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700
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OCR Scan |
HSS102 HSU88 HSU276 30MHz) MA2S784 MA4S713 890-45MHz) MA740 MA741 MA723 420C 610C MA700 | |
MA717
Abstract: MA723 ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713
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OCR Scan |
HSS102 HSU88 HSU276 30MHz) MA2S784 MA4S713 1MA721Â MA744 MA745 MA717 MA723 ma741 420C 610C | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2S784 Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 |
Original |
2002/95/EC) MA2S784 | |
vr24fContextual Info: Schottky Barrier Diodes SBD MA2S784 Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 Rating Unit VR 30 V VRRM 30 V IFM 300 mA Average forward current |
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MA2S784 vr24f | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2S784 Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 |
Original |
2002/95/EC) MA2S784 | |
MA723
Abstract: ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700
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OCR Scan |
HSS102 HSU88 HSU276 30MHz) MA2S784 MA4S713 i15-0Â 25MIN MA723 ma741 420C 610C MA700 | |
MA723
Abstract: ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700
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OCR Scan |
HSS102 HSU88 HSU276 30MHz) MA2S784 MA4S713 890-45MHz) MA740 MA741 MA723 420C 610C MA700 | |
610A
Abstract: MA723 ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713
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OCR Scan |
HSS102 HSU88 HSU276 30MHz) MA2S784 MA4S713 890-45MHz) MA740 MA741 610A MA723 420C 610C | |
MA723
Abstract: 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700 MA700A
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OCR Scan |
HSS102 HSU88 HSU276 30MHz) MA2S784 MA4S713 20MIN 20MIN MA723 420C 610C MA700 MA700A | |
MA2S784Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2S784 Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.60+0.05 –0.03 0.12+0.05 –0.02 M Di ain sc te on na |
Original |
2002/95/EC) MA2S784 MA2S784 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2S7840G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For super high speed switching For small current rectification • Package ■ Features |
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2002/95/EC) MA2S7840G | |
MA723
Abstract: ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700
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OCR Scan |
HSS102 HSU88 HSU276 30MHz) MA2S784 MA4S713 MA745WA MA745WK MA723 ma741 420C 610C MA700 | |
MA2S7840GContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2S7840G Silicon epitaxial planar type For super high speed switching For small current rectification • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b |
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2002/95/EC) MA2S7840G MA2S7840G | |
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MA2S784Contextual Info: Schottky Barrier Diodes SBD MA2S784 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification 1.60 ± 0.05 • Features + 0.05 ( 0.2 ) 0.30 ± 0.05 + 0.05 0.80 − 0.03 • Super small SS-mini type 2-pin package |
Original |
MA2S784 MA2S784 | |
MA2S784Contextual Info: Schottky Barrier Diodes SBD MA2S784 Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 Parameter Rating Unit VR 30 V VRRM 30 V IFM 300 mA Average forward current |
Original |
MA2S784 MA2S784 | |
MA2S7840GContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2S7840G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For super high speed switching For small current rectification ue pl d in an c se ed lud |
Original |
2002/95/EC) MA2S7840G MA2S7840G | |
MA2S784Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2S784 Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.60+0.05 –0.03 0.12+0.05 –0.02 M Di ain sc te on na |
Original |
2002/95/EC) MA2S784 MA2S784 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2S7840G Silicon epitaxial planar type For super high speed switching For small current rectification • Package ■ Features • Code SSMini2-F4 • Pin Name 1: Anode |
Original |
2002/95/EC) MA2S7840G | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2S784 Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 |
Original |
2002/95/EC) MA2S784 | |
Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA2S784 Silicon epitaxial planer type Unit : mm For super high-speed switching circuit For small current rectification 1.60±0.05 (0.2) 0.30±0.05 • Features ● High density mounting possible ● IF(AV)=100mA rectification possible |
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2SK1606 MA2S784 100mA 100mA | |
MA723
Abstract: ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700
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OCR Scan |
HSS102 HSU88 HSU276 30MHz) MA2S784 MA4S713 MA743 MA704AÂ MA721Â MA744 MA723 ma741 420C 610C MA700 | |
diodes ir
Abstract: MARKING 103 MA2S784
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Original |
MA2S784 diodes ir MARKING 103 MA2S784 | |
MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
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PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent |