MA724 Search Results

kt 207

Abstract: ma741 MA723 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713
Contextual Info: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA £ tt B aL B ÍL B Ä B Ä fôT fóT t&T « Yrrm Vr V (V) 30 tôT MA723 MA724 MA726 MA727 MA728 » T fâT

ma741

Abstract: MA723 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700
Contextual Info: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA £ tt B aL B ÍL B Ä B Ä fôT fóT t&T « Yrrm Vr V (V) 30 tôT MA723 MA724 MA726 MA727 MA728 » T fâT

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4X724 (MA724) Silicon epitaxial planar type For super high speed switching For small current rectification Unit: mm 2.90+0.02 –0.05 1.9±0.2 • Two isolated elements are contained in one package, allowing

Matsua M1T

Abstract: Matsushita M1T MA3X721 MA4X724 MA721 MA724 M1T diode
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4X724 (MA724) Silicon epitaxial planar type For super high speed switching For small current rectification Unit: mm 2.90+0.02 –0.05 1.9±0.2 0.16+0.1 –0.06 M

MA4X724

Abstract: MA724 M1T diode
Contextual Info: Schottky Barrier Diodes SBD MA4X724 (MA724) Silicon epitaxial planar type For super-high speed switching circuit For small current rectification Unit : mm + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 0.65 ± 0.15 + 0.1 • Features 0.4 − 0.05 1.45 1.5 − 0.05

MA723

Abstract: ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700
Contextual Info: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA £ tt B aL B ÍL B Ä B Ä fôT fóT t&T « Yrrm Vr V (V) 30 tôT MA723 MA724 MA726 MA727 MA728 » T fâT

MA723

Abstract: ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700
Contextual Info: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA £ tt B aL B ÍL B Ä B Ä fôT fóT t&T « Yrrm Vr V (V) 30 tôT MA723 MA724 MA726 MA727 MA728 » T fâT

MA723

Abstract: 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700 MA700A
Contextual Info: - Ä fií £ tt « Yrrm V HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA B aL BÍL B Ä B Ä fôT fóT t&T 30 MA723 MA724 MA726 MA727 MA728 » T fâT fôT 30 30 fôT

Matsushita M1T

Abstract: MA3X721 MA4X724 MA721 MA724
Contextual Info: Schottky Barrier Diodes SBD MA4X724 (MA724) Silicon epitaxial planar type For super high speed switching For small current rectification Unit: mm 2.90+0.02 –0.05 1.9±0.2 2 Peak forward current Single VR 30 V VRRM 30 V IFM 300 mA Forward current (Average)

MA723

Abstract: ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700
Contextual Info: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA MA717H MA721 MA721WA MA721M MA722 MA723 MA724 MA726 MA727 MA728 £ tt Vr V (V) B aL B ÍL B Ä B Ä fôT fóT

MA8051

Abstract: MA8047 MA8036 MAB030 MA7130 MA7160 MA7180 MA7200 MA7220 MA7240
Contextual Info: - y m MA7130 MA7150 MA7160 MA7180 MA7200 MA7220 MA7240 MA7270 MA7300 MA7330 MA7360 MA7390 MA7430 MA7470 MA7510 MA7560 MA8024 MA8027 MA8030 MA8033 MA8036 MA8039 MA8043 MA8047 MA8051 MA8056 MA8062 MA8068 MA8075 MA8082 MA8091 MA8100 MA8110 MA8120 MA8130 MA8140-M

MA8036

Abstract: MA8051 MAB030 MAS220 MA7130 MA7160 MA7180 MA7200 MA7220 MA7240
Contextual Info: - y m s a s m f MA7130 MA7150 MA 7160 MA7180 MA 7200 MA7220 MA7240 MA7270 MA7300 MA7330 të T të T fô T fô T të T fô T fâ T fô T MA7360 MA7390 MA 7430 MA7470 MA7510 fô T MA7560 MA8024 MA8027 MA8030 MA8033 fâ T fô T MA8036 MA8039 MA8043 MA8047 MA8051

m1t marking

Contextual Info: Schottky Barrier Diodes SBD MA4X724 (MA724) Silicon epitaxial planar type Unit: mm 2.90+0.02 –0.05 For super high speed switching For small current rectification 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95) 4 2 5° 0.5R 2.8+0.2 –0.3 3 1 (0.65) (0.2) 0.60+0.10

Matsua M1T

Abstract: m1t marking
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4X724 (MA724) Silicon epitaxial planar type For super high speed switching For small current rectification Unit: mm 2.90+0.02 –0.05 1.9±0.2 2 Peak forward current

M1T diode

Abstract: m1t marking marking m1t
Contextual Info: MA111 Schottky Barrier Diodes SBD MA724 Silicon epitaxial planer type Unit : mm For super high-speed switching circuit For small current rectification +0.2 2.8 –0.3 +0.1 0.4 –0.05 1.45 1 0.5 0.95 2 3 0.6 –0 0.2 200mA rectification possible +0.1 +0.1

MA723

Abstract: ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700
Contextual Info: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA £ tt Vr V (V) B Ä B Ä fôT fóT t&T 30 30 tôT MA723 MA724 MA726 MA727 MA728 » T fâT fôT 30 30 fôT

Matsua M1T

Abstract: M1T diode
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4X724 (MA724) Silicon epitaxial planar type For super high speed switching For small current rectification Unit: mm 2.90+0.02 –0.05 1.9±0.2 2 Peak forward current

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MA7D52

Contextual Info: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)

1115A

Abstract: 1115a01 MA721BT08TADG60 MA721BT08TADG70 MA722BT08TADG60 MA722BT08TADG70 MA724CT00TADG60 MA724CT00TADG70
Contextual Info: Order this document by 5VFPMU72D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1, 2, 4M x 72 5 V, FPM, Unbuffered DRAM Dual-In-Line Memory Module DIMM 8, 16, and 32 Megabyte • JEDEC–Standard 168–Lead Dual–In–Line Memory Module (DIMM) • Single 5 V Power Supply, TTL_Compatible Inputs and Outputs

a1024

Abstract: Panasonic diode MA1033 DIODE D29 MA4030 ma4300 zener MA2560 MA7056 MA1Z091 MA2430
Contextual Info: Diode # Zener Diode Series Zener Voltage Vz V MA1000 DO-35 (D28) P d = 500mW MA2000 DO-41 (D29) P D = 1W MA3000/MAZ Mini Type 3 pins (D12) P d = 200mW MA4000 DO-34 (D26) Pc = 370mW MA5000 Mini-Power Type 2 pins (D17) P D = 500mW MA7000 DO-41 (D29) P d = 800mW

MA7300B

Abstract: MA7056 MA7160 MA7470 MA7100 Ma7180-a MA7000 ma706 zener band yellow MA7510
Contextual Info: MA111 Zener Diodes MA7000 Series Silicon planer type Unit : mm For stabilization of power supply ø0.8 ● Radial taping possible 27 min. Large power dissipation Ptot 800mW Colored band indicates Vz classification 3rd Band 2nd Band 1st Band 5.0 max. ●

MA724CT10TADG60

Abstract: MA724CT10TADG70 C1-C18
Contextual Info: Order this document by 3VFPMU72D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4M x 72 3.3 V, FPM, Unbuffered DRAM Dual-In-Line Memory Module DIMM 4M x 72 (32MB) 168–LEAD DIMM CASE TBD 32 Megabyte for Error Correction Code Applications BACK • JEDEC–Standard 168–Lead Dual–In–Line Memory Module (DIMM)

Contextual Info: Order this document by 5VFPMU72D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1,2, 4M X 72 5 V, FPM, Unbuffered DRAM D ual-ln-Line Memory Module DIMM 1M x 72 (8MB), 2M x 72 (16MB) 168-LEAD DIMM CASE 1115A-01 8,16, and 32 Megabyte • JEDEC-Standard 168-Lead Dual-ln-Line Memory Module (DIMM)