MG30V2YS40 Search Results

Contextual Info: TOSHIBA MG30V2YS40 TO SH IBA GTR M O DU LE SILICON N CHANNEL IGBT MG30V2YS40 HIGH PO W E R SWITCHING APPLICATIONS M OTOR CONTROL APPLICATIONS The Electrodes are Isolated from Case. H igh Input Impedance Includes a Complete H alf Bridge in One Package. Enhancement-Mode

YS40

Abstract: diode 24R2
Contextual Info: TOSHIBA MG30V2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG30V2YS40 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete Half Bridge in One

diode L2

Contextual Info: MG30V2YS40 U n i t in m m HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • T h e E le c tro d e s a r e I s o la te d from C a se. • H ig h I n p u t Im p e d a n c e • I n c lu d e s a C o m p le te H a l f B rid g e in O ne Package.

Contextual Info: TOSHIBA MG30V2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Mfiinv?Y<;An HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package.

9CTI

Contextual Info: TOSHIBA MG30V2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG30V2YS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete H alf Bridge in One

mg500q1us1

Abstract: MG100J2YS50 mg300q1us41 mg75j6es50 MG400Q1US41 MG25Q2YS40 MG100Q2YS42 MIG20J901H MG50Q2YS40 mg100j6es5
Contextual Info: .3 UL Approvals List All devices are included in: File number: . E87989 Section number: 4. 1700 V Types MG30V2YS40 . 80* MG90V2YS40 . 80*

MG30V2YS40

Abstract: 3V02
Contextual Info: TO SHIBA MG30V2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG30V2YS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

MG30V2YS40

Contextual Info: MG30V2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG30V2YS40 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode

MG30V2YS40

Contextual Info: MG30V2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG30V2YS40 High Power Switching Applications Motor Control Applications Unit: mm l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode

S5J53

Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Contextual Info: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction

GT250101

Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a

MG15J6ES40

Abstract: MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4
Contextual Info: .2 Short-Circuit Guarantee General conditions Tim e b etw een short-circuits > 1 A llowed n u m b er o f short-circuits 100 Junction tem peratu re before short-circuit < 125 s °C Electrical Conditions for 600 V Types T ype No. Rg min / £2 VCE/V VCEP/V MG15J6ES40

G50Q2YS40

Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
Contextual Info: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101

MG50Q6ES41

Abstract: MG8QES42 mg200q2ys11 MG75Q2YS1 MG100Q2YS42 MP6750 MG100Q2YS11 mg50j1bs11 MG300J1US1 GT15J101
Contextual Info: Suggested IGBTs For o-Phase Inverters Suggested IGBTs For 3-Phase Inverters Inverter 220 VAC Input Brake Section Inverter Section 440 VAC Input Brake Section Inverter Section f < 5 kHz f > 5 kHz 600 VAC Input Inverter HP (kW) (kVA) 1 0.75 1.5 GT15J101 MP6750

MG50Q6es41

Abstract: MG8QES42 GT15J101 MG75Q2YS11 MG25Q6ES42 MG100Q2YS42 MG300Q1US41 MG300Q2YS MG50Q1BS1 MG150Q2YS1
Contextual Info: Suggested KìBTs For 3-Phase Inverters Suggested IGBTs For 3-Phase Inverters 220 V A C Input Inverter Brake Inverter Brake Section Section Section 440 VAC Input 600 VAC Input Inverter Section Inverter f < 5 kHz f > 5 kHz GT15Q101 MG8Q6ES42 MG8QES42 - MP6752

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228