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    Toshiba America Electronic Components GT10Q301Q

    SILICON N CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Insulated Gate Bipolar Transistor, 10A I(C), 1200V V(BR)CES, N-Channel
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    ComSIT USA GT10Q301Q 100
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    Others XM25QU32CU2IGT10Q-00000

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    Chip 1 Exchange XM25QU32CU2IGT10Q-00000 6,500
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    Toshiba America Electronic Components GT10Q101(Q)

    IGBT discrete
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    Chip1Stop GT10Q101(Q) 205
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    GT10Q Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    GT10Q101 Toshiba N-channel iso-gate bipolar transistor (MOS technology) Original PDF
    GT10Q101 Toshiba Original PDF
    GT10Q101 Toshiba Discrete IGBTs Original PDF
    GT10Q101 Toshiba Discrete IGBTs Original PDF
    GT10Q301 Toshiba Discrete IGBTs Original PDF
    GT10Q301 Toshiba Discrete IGBTs Original PDF
    GT10Q301 Toshiba TRANS IGBT CHIP N-CH 1200V 10A 3(2-16C1C) Original PDF
    GT10Q301 Toshiba Scan PDF
    GT10Q301 Toshiba SILICON N CHANNEL IGBT Scan PDF

    GT10Q Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: GT10Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q301 High Power Switching Applications Motor Control Applications • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.32 µs max • Low saturation voltage: VCE (sat) = 2.7 V (max)


    Original     		PDF GT10Q301 2-16C1C

    Untitled

    Abstract: No abstract text available
    Text: GT10Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q301 High Power Switching Applications Motor Control Applications • The 3rd generation · Enhancement-mode · High speed: tf = 0.32 µs max · Low saturation voltage: VCE (sat) = 2.7 V (max)


    Original     		PDF GT10Q301 2-16C1C

    GT10Q301

    Abstract: 2-16C1C nigbt
    Text: GT10Q301 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT10Q301 ○ 大電力スイッチング用 ○ モータドライブ用 単位: mm z 第 3 世代品です。 z 取り扱いが簡単なエンハンスメントタイプです。


    Original     		PDF GT10Q301 2-16C1C GT10Q301 2-16C1C nigbt

    GT10Q101

    Abstract: GT10Q301 rg3100
    Text: GT10Q101 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT10Q101 ○ 大電力スイッチング用 単位: mm • 第 3 世代品です。 • 取り扱いが簡単なエンハンスメントタイプです。 • スイッチング時間が速い。 : tf = 0.32 s 最大


    Original     		PDF GT10Q101 2-16C1C 20070701-JA GT10Q101 GT10Q301 rg3100

    GT10Q301

    Abstract: No abstract text available
    Text: GT10Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q301 High Power Switching Applications Motor Control Applications • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.32 µs max • Low saturation voltage: VCE (sat) = 2.7 V (max)


    Original     		PDF GT10Q301 GT10Q301

    GT10Q101

    Abstract: GT10Q301
    Text: GT10Q101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.32 µs max • Low saturation voltage: VCE (sat) = 2.7 V (max)


    Original     		PDF GT10Q101 2-16C1C GT10Q101 GT10Q301

    GT10Q301

    Abstract: IF-258
    Text: GT10Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q301 High Power Switching Applications Motor Control Applications • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.32 s max • Low saturation voltage: VCE (sat) = 2.7 V (max)


    Original     		PDF GT10Q301 GT10Q301 IF-258

    GT10Q101

    Abstract: GT10Q301
    Text: GT10Q101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.32 µs max • Low saturation voltage: VCE (sat) = 2.7 V (max)


    Original     		PDF GT10Q101 2-16C1C GT10Q101 GT10Q301

    GT10Q101

    Abstract: GT10Q301
    Text: GT10Q101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications • The 3rd Generation · Enhancement-Mode · High Speed: tf = 0.32 µs max · Low Saturation Voltage: VCE (sat) = 2.7 V (max)


    Original     		PDF GT10Q101 2-16C1C GT10Q101 GT10Q301

    Untitled

    Abstract: No abstract text available
    Text: GT10Q101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.32 µs max • Low saturation voltage: VCE (sat) = 2.7 V (max)


    Original     		PDF GT10Q101 2-16C1C

    GT10Q101

    Abstract: GT10Q301
    Text: GT10Q101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.32 µs max • Low Saturation Voltage: VCE (sat) = 2.7 V (max)


    Original     		PDF GT10Q101 2-16C1C GT10Q101 GT10Q301

    Untitled

    Abstract: No abstract text available
    Text: GT10Q101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications • The 3rd Generation · Enhancement-Mode · High Speed: tf = 0.32 µs max · Low Saturation Voltage: VCE (sat) = 2.7 V (max) Unit: mm Maximum Ratings (Ta = 25°C)


    Original     		PDF GT10Q101 2-16C1C

    GT10Q101

    Abstract: GT10Q301
    Text: GT10Q101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.32 µs max • Low Saturation Voltage: VCE (sat) = 2.7 V (max)


    Original     		PDF GT10Q101 000707EAA1 GT10Q101 GT10Q301

    Untitled

    Abstract: No abstract text available
    Text: GT10Q101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications • The 3rd Generation · Enhancement-Mode · High Speed: tf = 0.32 µs max · Low Saturation Voltage: VCE (sat) = 2.7 V (max) Unit: mm Maximum Ratings (Ta = 25°C)


    Original     		PDF GT10Q101 2-16C1C

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    GT30F124

    Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
    Text: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


    Original     		PDF BCE0010F GT30F124 GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TEN TATIVE GT10Q301 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N CHANNEL IGBT GT10Q301 HIGH P O W E R SWITCHING APPLICATIONS U n it in mm M OTOR CONTROL APPLICATIONS 1 5 .9 M A X f t3 - 2 i 0 .2 The 3rd Generation Enhancement-Mode H ig h Speed


    OCR Scan     		PDF GT10Q301

    GT10Q301

    Abstract: IC204
    Text: TO SH IBA GT10Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10Q301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf = 0.32 jus Max. Low Saturation Voltage : V q e (sa^) = 2.7 V (Max.)


    OCR Scan     		PDF GT10Q301 GT10Q301 IC204

    G50Q2YS40

    Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
    Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101


    OCR Scan     		PDF GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101 GT15J101 GT15J102 GT15J103 GT15Q101 G50Q2YS40 MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js

    GT10Q311

    Abstract: No abstract text available
    Text: TOSHIBA TEN TATIVE GT10Q311 T O S H IB A IN SU LA TE D GATE BIPO LA R T R A N SIST O R SILICO N N C H A N N E L IGBT GT10Q311 H IGH P O W E R S W IT C H IN G A P PL IC A T IO N S U nit in mm M O T O R C O N T R O L AP PLIC A TIO N S The 3rd Generation Enhancement-Mode


    OCR Scan     		PDF GT10Q311 GT10Q311

    GT10Q301

    Abstract: No abstract text available
    Text: TO SH IBA GT10Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10Q301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf = 0.32 jus Max. Low Saturation Voltage : V qe (sa^) = 2.7 V (Max.)


    OCR Scan     		PDF GT10Q301 GT10Q301

    GT10Q301

    Abstract: No abstract text available
    Text: TOSHIBA GT10Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10Q301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf = 0.32 jus Max. Low Saturation Voltage : V qe (sa^) = 2.7 V (Max.)


    OCR Scan     		PDF GT10Q301 GT10Q301

    S5J53

    Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
    Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction


    OCR Scan     		PDF 200-V 400J101H MG75J1BS11 MG25J1B511 MG50J1BS11 MG100J1BS11 MG150J1BS11 MG25Q1BS11 MG50Q1BS11 MG75Q1BS11 S5J53 MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753