MGFK33V4045 Search Results

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaA$ FET> MGFK33V4045 1 4 ,0 — 14.SGHz BAND 2W INTERNALLY M ATCHED GaAs F E T DESCRIPTION OUTLINE DRAWING The M G F K 3 3 V 4 0 4 5 is an in te rn a lly impedance matched U n i t : m i l l i m e t e r s inches GaAs power FET especially designed fo r use in 14.0 ^ 14.5

Contextual Info: Ku B A N D IN T ERN A LLY M A T C H E D G aA s FET MGFKxxVxxxx Series T y p ic a l C h a ra c te ristic s Type M G FK35V2228 MGFK3SV2732 MGFK38V2228 MGFK38V2732 MGFK25V4045 MGFK30V404S MGFK33V4045 MGFK35V4045 MGFK37V4045 MGFK41V404S PidB dBm GlP f (dB) (GH z )

2w, GaAs FET

Abstract: MGFK33V4045
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK33V4045 14.0 ~ 14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC

Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK33V4045 14.0 – 14.5 GHz BAND / 2W DESCRIPTION The MGFK33V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK33V4045 14.0 – 14.5 GHz BAND / 2W DESCRIPTION The MGFK33V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> ! MGFK33V4045 ! i 1 4 .0 — 14.5G H z BAND 2W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F K 3 3 V 4 0 4 5 is an internally impedance matched GaAs power FET especially designed fo r use in 14.0 ~ 14.5 GHz-band am plifiers. The herm etically sealed metal-ceramic

MGF2430A

Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

3642G

Contextual Info: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m