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    MGFK35V4045 Price and Stock

    Mitsubishi Electric MGFK35V4045-01

    RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, KU BAND, GALLIUM ARSENIDE, N-CHANNEL, JUNCTION FET
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    Quest Components MGFK35V4045-01 2
    • 1 $100
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    • 100 $100
    • 1000 $100
    • 10000 $100
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    MGFK35V4045 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFK35V4045 Mitsubishi 14.0-14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET Original PDF
    MGFK35V4045 Mitsubishi 14.0-14.5 GHz BAND 3W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFK35V4045 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    MGFK35V4045 Unknown FET Data Book Scan PDF

    MGFK35V4045 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: < X/Ku band internally matched power GaAs FET > MGFK35V4045 14.0 – 14.5 GHz BAND / 3.5W DESCRIPTION The MGFK35V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFK35V4045 MGFK35V4045

    35W amplifiers

    Abstract: No abstract text available
    Text: < X/Ku band internally matched power GaAs FET > MGFK35V4045 14.0 – 14.5 GHz BAND / 3.5W DESCRIPTION The MGFK35V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFK35V4045 MGFK35V4045 35W amplifiers

    MGFK35V4045

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK35V4045 14.0 ~ 14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC


    Original     		PDF MGFK35V4045 MGFK35V4045

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    MGFK35V4045

    Abstract: No abstract text available
    Text: M ITSUBISHI S E M IC O N D U C T O R <GaAs FET> ÜGFK35V4045 14.0-14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFK35V4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGFK35V4045 MGFK35V4045 1200mA)

    Untitled

    Abstract: No abstract text available
    Text: Ku B A N D IN T ERN A LLY M A T C H E D G aA s FET MGFKxxVxxxx Series T y p ic a l C h a ra c te ristic s Type M G FK35V2228 MGFK3SV2732 MGFK38V2228 MGFK38V2732 MGFK25V4045 MGFK30V404S MGFK33V4045 MGFK35V4045 MGFK37V4045 MGFK41V404S PidB dBm GlP f (dB) (GH z )


    OCR Scan     		PDF FK35V2228 MGFK3SV2732 MGFK38V2228 MGFK38V2732 MGFK25V4045 MGFK30V404S MGFK33V4045 MGFK35V4045 MGFK37V4045 MGFK41V404S

    MGFK30M4045

    Abstract: mgfx35v0510 MP6704 MGFX35V0005 MGFK35M4045 M-Typ MGFK33M4045 MGFK35V2228 MGFK35V2732 MGFK35V4045
    Text: - 156 - M € *± € m 1* & a f ï t * 1 1/ h' ü V A * £ (V) 9t * të S P d /P c h (A) * * (W) MGFK30M4045 MW PA GaAs N D -14 GDO -14 0 1. 2 D 7.5 MGFK33M4045 MW PA GaAs N D -14 G DO -14 0 2.4 D 15 MW PA GaAs N D -14 GDO -14 0 4. 5 D 30 MGFK35V2228


    OCR Scan     		PDF MGFK30M4045 MGFK33M4045 MGFK35M4045 MGFK35V2228 MGFK35V2732 MGFK35V4045 MGFK37V4Ã MGFX38V0005 MGFX38V0510 MGFX38V1722 mgfx35v0510 MP6704 MGFX35V0005 M-Typ

    3642G

    Abstract: No abstract text available
    Text: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m


    OCR Scan     		PDF

    MGFK35V4045-01

    Abstract: No abstract text available
    Text: A m it s u b is h i M G FK37V XXXX Packaged ELECTRONIC DEVICE GROUP FEATURES The MGFK37VXXXX products are internally impedance matched devices for use in Ku-band power amplifier applications. • Internally matched to 50Q • High output power P-idB = 5.5W (TYP)


    OCR Scan     		PDF FK37V MGFK37VXXXX MGFK35V4045-01 MGFK35V4045-51

    MGFK35V2732-01

    Abstract: MGFK35V2732-51 MGFK35VXXXX FK35V
    Text: ^M ITSUBISHI MGFK35VXXXX Packaged ELECTRONIC DEVICE GROUP DESCRIPTION FEATURES The MGFK35VXXXX products are internally impedance matched devices for use in Ku-band power amplifier applications. • Internally matched to 50Q • High output power P1dB = 3.5 (TYP)


    OCR Scan     		PDF MGFK35VXXXX MGFK35VXXXX MGFK35V2228 MGFK35V2228-01 MGFK35V2228-51 MGFK35V2732-01 MGFK35V2732-51 MGFK35V4045-01 FK35V4045-51 MGFK35V2732-51 FK35V

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFK35V4045 1 4 .0 — 1 4 .5 G H z BAND 3 W IN T E R N A L L Y M A TC H ED GaAs F E T DESCRIPTION The M G F K 3 5 V 4 0 4 5 is an in te rn a lly impedance matched GaAs power FET especially designed fo r use in 14.0 ~ 14.5


    OCR Scan     		PDF GFK35V4045 MGFK35V4045

    MGFK37V4045

    Abstract: No abstract text available
    Text: Ku BAND INTERNALLY MATCHED GaAs FET MGFKxxVxxxx Series Typical Characteristics P ld i dBm G lp (dB) f (GHz) MGFK35V2228 3 5 .5 7 .0 1 2 .2 - 1 2 .8 •'nBQ« 3 5 .5 7 .0 1 2 .7 - 1 3 .2 3 8 .0 6 .0 3 8 .0 Type 3*» M Q fK a n r^ S MGFK38V2732 MGFK25V4045 *


    OCR Scan     		PDF GF-14 GF-27 MGFK35V2228 MGFK38V2732 MGFK25V4045 MGFK30V4045 MGFK33V4G45 MGFK35V4045 MGFK37V4045