MGFK35V2228 Search Results

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK35V2228 1 2 .2 — 12.8GHz BAND 3W INTERNALLY M ATCHED GaAs F E T DESCRIPTION O UTLINE DRAWING The M GFK35V2228 is an internally impedance matched GaAs power FET especially designed fo r use in 12.2 ~ 12.8 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFK30M4045

Abstract: mgfx35v0510 MP6704 MGFX35V0005 MGFK35M4045 M-Typ MGFK33M4045 MGFK35V2228 MGFK35V2732 MGFK35V4045
Contextual Info: - 156 - M € *± € m 1* & a f ï t * 1 1/ h' ü V A * £ (V) 9t * të S P d /P c h (A) * * (W) MGFK30M4045 MW PA GaAs N D -14 GDO -14 0 1. 2 D 7.5 MGFK33M4045 MW PA GaAs N D -14 G DO -14 0 2.4 D 15 MW PA GaAs N D -14 GDO -14 0 4. 5 D 30 MGFK35V2228

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK35V2228 1 2 .2 — 1 2 .8 G H z BAND 3 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION OUTLINE DRAWING T h e M G F K 3 5 V 2 2 2 8 is an in te rn a lly impedance matched GaAs pow er F E T especially designed fo r use in 12 .2 — 12 .8

MGFK37V4045

Contextual Info: Ku BAND INTERNALLY MATCHED GaAs FET MGFKxxVxxxx Series Typical Characteristics P ld i dBm G lp (dB) f (GHz) MGFK35V2228 3 5 .5 7 .0 1 2 .2 - 1 2 .8 •'nBQ« 3 5 .5 7 .0 1 2 .7 - 1 3 .2 3 8 .0 6 .0 3 8 .0 Type 3*» M Q fK a n r^ S MGFK38V2732 MGFK25V4045 *

3642G

Contextual Info: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m

MGFK35V2732-01

Abstract: MGFK35V2732-51 MGFK35VXXXX FK35V
Contextual Info: ^M ITSUBISHI MGFK35VXXXX Packaged ELECTRONIC DEVICE GROUP DESCRIPTION FEATURES The MGFK35VXXXX products are internally impedance matched devices for use in Ku-band power amplifier applications. • Internally matched to 50Q • High output power P1dB = 3.5 (TYP)