MSM51V16800 Search Results

SOJ28-P-300-1

Abstract: MSM51V16800B MSM51V16800BSL
Contextual Info: O K I Semiconductor MSM5 1V16800B/BSL E2G0074-17-41 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 51V16800B/BSL is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16800B /B SL achieves high integration, high-speed operation, and

MSM51V16800BSL

Contextual Info: ¡ Semiconductor MSM51V16800B/BSL ¡ Semiconductor MSM51V16800B/BSL E2G0074-17-41 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16800B/BSL is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16800B/BSL achieves high integration, high-speed operation, and

a9ra

Contextual Info: J2G0126-17-61 作成：1998年 3月 ¡ 電子デバイス MSM51V16800D/DSL l 暫定 MSM51V16800D/DSL 2,097,152-Wordx8-Bit DYNAMIC RAM：高速ページモード n 概要 MSM51V16800D/DSLはCMOSプロセス技術を用いた2,097,152ワ−ド×8ビット構成のダイナミックラ

Contextual Info: O K I Semiconductor MSM51V16800_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16800 is a new generation Dynamic RAM organized as 2,097,152-word x 8-bit configuration. The technology used to fabricate the MSM51V16800 is OKI's CMOS silicon gate process technology.

Contextual Info: J2G0074-17-41 作成：1998年 1月 MSM51V16800B/BSL l 前回作成：1997年 5月 ¡ 電子デバイス MSM51V16800B/BSL 2,097,152-Wordx8-Bit DYNAMIC RAM：高速ページモード n 概要 MSM51V16800B/BSLはCMOSプロセス技術を用いた2,097,152ワ−ド×8ビット構成のダイナミックラ

Contextual Info: O K I Semiconductor MSM51V16800_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16800 is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16800 achieves high integration, high-speed operation, and low-power

B754

Abstract: S4240
Contextual Info: O K I Semiconductor MSM51 V16800 _ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16800 is a new generation Dynamic RAM organized as 2,097,152-word x 8-bit configuration. The technology used to fabricate the MSM51V16800 is OKI's CMOS silicon gate process technology.

MSM51V16800D

Abstract: MSM51V16800DSL
Contextual Info: Pr E2G0126-17-61 el im y 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16800D/DSL is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16800D/DSL achieves high integration, high-speed operation,

Contextual Info: O K I Semiconductor MSM5IVI 6800_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16800 is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16800 achieves high integration, high-speed operation, and low-power

MSM51V16800A

Contextual Info: O K I Semiconductor MSM51 V16800 A_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16800A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI’s CMOS silicon gate technology. The MSM51V16800A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16800A is

Contextual Info: O K I Semiconductor MSM51V16800A 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16800A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI’s CMOS silicon gate technology. The MSM51V16800A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16800A is

Contextual Info: O K I Semiconductor MSM51V16800_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16800 is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16800 achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5 1V16800B/BSL E2G0074-17-41 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 51V16800B/BSL is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16800B /B SL achieves high integration, high-speed operation, and

Contextual Info: O K I Semiconductor MSM5 1VI 6800 A_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16800A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16800A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS.MSM51V16800A is

m51171

Contextual Info: OKI Semiconductor MSM51V17180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynam ic RA M organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is O K I's CM O S silicon gate process technology.

Bv 42 transistor

Abstract: M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K
Contextual Info: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.

MSM5117180-70

Abstract: MSM5117180-80
Contextual Info: O K I Semiconductor MSM5 1 17180 _ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117180 is OKI's CMOS silicon gate process technology.

DD1750

Contextual Info: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.

MSM51V16800DSL

Abstract: MSM51V16800D
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

SOJ28

Abstract: L917
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

msm514260c

Abstract: MSM514256C edo 16m x 32
Contextual Info: E2G0004-17-42 Product Overview O K I Semiconductor Product Overview DRAM H H 5V 1M xT~1— I MSM5110OOC/CL H 256K X 4 1— I MSM514256C/CL j 128K X 8 h i MSM518126/L MSM518128/L I 64K X 16 M MSM511664C/CL MSM511666C/CL 2M~~hj 2M X 1 I— I M 3M 512100/T 1M X 2 I— ì MSM512200/L~

20 TI 54240

Abstract: MSM51VI6180
Contextual Info: O K I Semiconductor MSM51 V16180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51VI6180 is OKI's CMOS silicon gate process technology.

32-PIN

Abstract: MSM5116900-70 MSM5116900-80 B724e
Contextual Info: O K I Semiconductor MSM5116900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM5116900 is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSÜ5 1V16800B/BSL E2G0074-17-41 2,097,152-Word x 8-Btt DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51VI6800B/B5L is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51VI6800B /BSL achieves high integration, high-speed operation, and