S4240 Search Results

MSM5117400

Contextual Info: O K I Semiconductor MSM5117400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPTIO N T he M SM 5117400 is a n ew gen eratio n d yn am ic org an ized as 4,194,304-word x 4-bit. T he technology used to fabricate the M SM 5 1 17400 is O K I's C M O S silicon gate process technology.

ECHO canceller IC

Abstract: sft 43 MSM7543 MSM7602-001GS-K MSM7620 MSM7620-001GS-K MSM7620-011GS-BK
Contextual Info: O K I Semiconductor MSM7620 Echo Canceller GENERAL DESCRIPTION The MSM7620 is an im proved version of the MSM7520 w ith the sam e basic configuration. The MSM7620 includes follow ing im provements: a m odified through m ode, tim ing control of the control pin input, and a thinner package. The MSM7620 also provides a pin-for-pin replacement

Contextual Info: O K I Semiconductor MSC23T/P1720C-XXBS18 1,048,576-Word x 72-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION T he O K I M SC23T/D 1720C-xxBS18 is a fu lly decoded 1,048,576-w o rd x 72-bit C M O S D yn am ic R an d o m A ccess M e m o ry M o d u le com posed o f eighteen 4-Mb D R A M s 1 M x 4 in T S O P o r S O J

tic 1060

Contextual Info: Silicon Power Rectifier S / R 4 2 Series ~H M h - »I A B C D F G H J K M R T AA -c— - L_ - Ir . t 1 - r r A < 1 ^ A M illim eter Minimum Maximum Minimum Maximum Notes AA B J I Dim. Inches _ _ _ _ 1.050 1.060 1.166 4.70 .640 .233 .745 .373

di 437

Abstract: 1n3921
Contextual Info: Silicon Power Rectifier S / R 4 2 Series Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R T AA Notes: 1. 3 / 8 - 2 4 U N F -3 A CC 1 1.050 - 4.30 .610 .213 - .344 .276 .465 - 1.060 1.166 4.70 .640 .233 .745 .373 .286

ms1250

Abstract: SUNNY MSM6650 eprom 6653 ln 258 oki voice synthesizer msm6375 Sunny Oscillators MSM6653 MSM6656-XXX 10FFE
Contextual Info: O K I Semiconductor MSM6652-XXX/MSM6653-XXX/ MSM6654-XXX/MSM6655-XXX/ MSM6656-XXX_ Internal MASK ROM Speech Synthesis LSI G E N E R A L D E S C R IP T IO N The MSM6650 family is a successor to the MSM6375 family that are speech synthesis LSIs w ith

Contextual Info: O K I Semiconductor MSM7533H/7533V/7534 2ch Single Rail CODEC G E N E R A L D E SC R IP T IO N The M SM 7533 and M SM 7534 are tw o-channel C O D EC C M O S IC s for voice signals ran ging from 300 to 3400 Hz. These d evices contain filters for A / D and D /A conversion.

IDT74HCT

Abstract: S4228 idt71502
Contextual Info: CM O S STATIC RAM 6 4 K 4 K x 16-BIT REGISTERED RAM w /S P C 1 IDT 71502S IDT 71502L FEATURES: DESCRIPTION: • 4K x 16 RAM w ith registered o utp uts, serial or p arallel load and re ad b a ck ca p a b ility In o n ly 48 pin s • Serial P rotocol C hannel a llo w s serial load a n d read b a ck o f RAM

MSM27C421AZB

Contextual Info: O K I Semiconductor MSM27C421AZB 524,288-Word x 8-Bit One Time PROM D E S C R IP T IO N The MSM27C421AZB is a 4 M b electrically P rogram m ab le R ead-O nly M em ory o rg an ized as 524 288 ^ rM S M 2 7 C 4 2 1 AZBSM27Cf421 AZB ° p8rateS ° n 3 sinSle 5 V Pow er su PPlv an d is TTL com patible. Since

S4290

Abstract: 1N2437 IN139 s4205 1N1397 1N2426 1N2427 1N2436 1N3139 1N411B
Contextual Info: Series 42 I B B Avalanche Silicon Power Rectifiers E L E C T R IC A L C H A R A C T E R IS T IC S : M a x im u m A v e ra g e F o r w a r d C u rre n t, S in g le P h a se H a lf W a v e DC R a tin g a t 1 3 0 ° C . C a s e T e m p e ra tu re . 125 am p e re s

brown Boveri diode

Abstract: BROWN BOVERI N2427 N1403 1N4878 N3294 S4220 DIODE BBC N413B R42120
Contextual Info: BROWN BOVERI -FMC B R O W N , B O V E R I & CI E AKTIENGESELLSCHAFT MANNHEIM Silicon Power Rectifiers BBC G eschäftsbereich H albleiter und S trom rich te r Telefon 06206 503-1, T elex 0 4 -6 5 727 Postfach 200, D -6 84 0 Lam pertheim Brochure Order No.

081m

Contextual Info: O K I Semiconductor MSM51V17900_ 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51VI7900 is OKI's CMOS silicon gate process technology.

Contextual Info: Silicon Power Rectifier S/R42 Series Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes A B C F G H J K M R T AA Notes: 1. 3 / 8 - 2 4 UNF-3A 2. Full threads within 2 1 /2 threads 3. Standard polarity; Stud Is Cathode Reverse polarity: Stud Is Anode

Contextual Info: O K I Semiconductor M S M 6652-X X X /M S M 6653-X X X / M S M 6654-X X X /M S M 6655-X X X / M SM 6656-XXX_ Internal MASK ROM Speech Synthesis LSI GENERAL DESCRIPTION The M SM 6650 fam ily is a su ccesso r to the M SM 6375 fam ily that are speech synthesis LSIs w ith

Contextual Info: O K I Semiconductor MSM64153 L-011 LCD Games IC GENERAL DESCRIPTION The MSM64153L-011 is a lo w p o w e r 4-bit m icro co n tro ller fab ricated in silicon g ate CM OS technology. It uses an nX-4s h ig h p erfo rm an ce core CPU th a t h as OKI orig in al arch itectu re a n d

B754

Abstract: S4240
Contextual Info: O K I Semiconductor MSM51 V16800 _ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16800 is a new generation Dynamic RAM organized as 2,097,152-word x 8-bit configuration. The technology used to fabricate the MSM51V16800 is OKI's CMOS silicon gate process technology.

TRANSISTOR AH-10

Abstract: MSM511002A-70
Contextual Info: 5ÔE D • b?242MÜ D0127fl3 113 H O K I J O K I O K I M S M s e m SEMI CONDUCTOR ic o n d u c t o r ÊROUP ~ T * ' ~ U - 2 3 - i 5 ' 5 1 1 0 0 2 A _ 1,048,576-WORD X 1-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM511002A is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The

S4250

Abstract: S4210 S42100 S42120 S42140 S4220 S4230 S4240 S4260 S4280
Contextual Info: Silicon Power Rectifier S / R 4 2 Series H Mh I :° > i Millimeter Minimum Maximum Minimum Maximum Notes AA B » Dim. Inches I -c — Notes: 1. 3 / 8 - 2 4 UNF-3A 2. Full threads within 2 1 /2 threads 3. 1 /4 - 2 8 UNF-2B 4. Reverse polarity: Stud is Anode

tic 1060

Contextual Info: Silicon Power Rectifier S / R 4 2 Series - Jx ;° > i \ Dim. Inches —I M I— I AA B » M illim eter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R T AA BB CC I -c — Notes: 1. 3 / 8 - 2 4 U N F-3A 2. Full threads within 2 1 /2 threads 3. Standard polarity: Stud is Cathode

54e4

Contextual Info: 4bE O K I D • b ? B 4 2 4 0 ÜÜÜTb' I S 1 ^ 7 « O K I J O K I SEMI CONDUCTOR GROUP semiconductor MSC2320A-XXYS9 r - v r - 2 3 262, 144 BY 36BIT DYNAM IC RAM MODULE GENERAL DESCRIPTION The Oki M SC 2320A-XXY S9 is a fu lly decoded, 2 6 2 ,1 4 4 w ords X 36 bit CMOS dynam ic random

MSM534000B

Contextual Info: O K I Semiconductor MSM534000B 262,144-Word x 16-Bit Mask ROM DESCRIPTION ii! iS a high-Speed Silkon Sate CMOS Mask ROM with 262,144-word x 16-bit capacity /if ° perateS °*} a, Smgle 5 ‘° V P ° wer and is TTL compatible. The chip's asynchro­ nous I /O requires no external clock assuring easy operation. A power-down mode provides low power

S4250

Abstract: S4210 S42100 S42120 S42140 S4220 S4230 S4240 S4260 S4280
Contextual Info: Silicon Dower Rectifier s / R4-2 Series —I MI— <0>I M illimeter Minimum Maximum Minimum Maximum Notes AA B I Dim. Inches I A B C D F G H J K M R T AA - c - Notes: 1. 3 / 8 - 2 4 U N F-3A 2. Full threads within 2 1 /2 threads 3. 1 / 4 - 2 8 UNF-2B 4. Reverse polarity: Stud is Anode

TAA 840

Abstract: MSM51256
Contextual Info: 4bE O K I D • b ? B 4 2 4 0 ÜÜÜTb' I S 1 ^ 7 « O K I J O K I SEMI CONDUCTOR GROUP semiconductor MSC2320A-XXYS9 r - v r - 2 3 262, 144 BY 36BIT DYNAM IC RAM MODULE GENERAL DESCRIPTION The Oki M SC 2320A-XXY S9 is a fu lly decoded, 2 6 2 ,1 4 4 w ords X 36 bit CMOS dynam ic random

Contextual Info: O K I Semiconductor MSM5 1 18 1 65 A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5118165A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5118165A achieves high integration, high-speed operation, and low-power