OP166 Search Results

Contextual Info: Plastic Infrared Emitting Diode OP165, OP166 Series Features: • • • • • • T-1 3 mm package style Choice of narrow or wide irradiance pattern Choice of dome lens or flat lens Mechanically and spectrally matched to other OPTEK devices Higher power output than GaAs at equivalent drive currents

Contextual Info: 0 . OPTEK Product Bulletin OP166W June 1996 G aA s Plastic Infrared Emitting Diode Type OP166W •M :r ; IS .060 I .52 NOM SHORTER THAN ANOOE LEAD. DIMENSIONS ARE IN INCHES (MILLIMETERS) Features Absolute Maximum R atings (T a = 2 5 ° C u n le s s o th e rw ise noted)

AXP 221

Abstract: 0P166W
Contextual Info: OPTEK Product Bulletin OP166W June 1996 GaAs Plastic Infrared Emitting Diode Type OP166W Features • Wide irradiance pattern • Mechanically and spectrally matched to the OP506W • Small package size for space limited applications • T-1 package style

OP161SL

Abstract: OP166 OP166A OP166B OP166C OP166D OP506 RMA 218
Contextual Info: 0 OPTEK Product Bulletin OP166A June 1996 GaAs Plastic Infrared Emitting Diodes Types OP166A, OP166B, OP166C, OP166D • • Narrow irradiance pattern Mechanically and spectrally matched to the OP506 series phototransistors • Variety of Sensitivity ranges

Contextual Info: 0 OPTEK Product Bulletin OP166A June 1996 GaAs Plastic Infrared Emitting Diodes Types OP166A, OP166B, OP166C, OP166D • • Narrow irradiance pattern Mechanically and spectrally matched to the OP506 series phototransistors • Variety of S ensitivity ranges

Contextual Info: OPTEK Product Bulletin OP166W April 1993 GaAs Plastic Infrared Emitting Diode Type OP166W DIMENSIONS ARE IN INCHES MILLIMETERS . 145 13.681 .02M 0.6A I g, .111510.381 Absolute Maximum Ratings (T a 25 ° C u n le ss otherwise noted) Wide irradiance pattern

AXP 221

Abstract: OP166W OP506W
Contextual Info: < g OPTEK Product Bulletin OP166W June 1996 GaAs Plastic Infrared Emitting Diode Type OP166W Features • Wide irradiance pattern • Mechanically and spectrally matched to the OP506W • Small package size for space limited applications • T-1 package style

Contextual Info: OPTEK Product Bulletin OP166A June 1996 GaAs Plastic Infrared Emitting Diodes Types OP166A, OP166B, OP166C, OP166D Features • Narrow irradiance pattern • Mechanically and spectrally matched to the OP506 series phototransistors • Variety of Sensitivity ranges

AXP 223

Abstract: QP50-6 axp 195
Contextual Info: OPTEK Product Bulletin OP166A April 1993 GaAs Plastic Infrared Emitting Diodes Types OP166A, OP166D DIMENSIONS ARE IN INCHES MILLIMETERS MEASUREMENT SURFACE (NOTE 3) .200(5.08) .180(4.57) _ .050(1.27) . NOM .16514.19) _ .145(3.68) .100(2.54) NOM B A . .500(12.701

OP166W

Abstract: OP506W
Contextual Info: 0 .Q .PTEK Product Bulletin OP166W June 1996 GaAs Plastic Infrared Emitting Diode Type OP166W • FOR IDENTIFICATION PURPOSES. CATHODE LEAD IS .060 l.52 NOM SHORTER THAN ANODE LEAD. DIMENSIONS ARE IN INCHES (MILLIMETERS) Features Absolute Maximum Ratings (T a = 25° C unless otherwise noted)

op166 5

Abstract: OP165 OP165A OP165B OP165C OP165D OP165W OP166 OP166A OP505
Contextual Info: Plastic Infrared Emitting Diode OP165, OP166 Series Features: • • • • • • T-1 3 mm package style Choice of narrow or wide irradiance pattern Choice of dome lens or flat lens Mechanically and spectrally matched to other OPTEK devices Higher power output than GaAs at equivalent drive currents

OP165C

Abstract: OP165D OP165W OP166 OP166A OP505 OP535 OP165 OP165A OP165B
Contextual Info: Plastic Infrared Emitting Diode OP165, OP166 Series Features: • • • • • • T-1 3 mm package style Choice of narrow or wide irradiance pattern Choice of dome lens or flat lens Mechanically and spectrally matched to other OPTEK devices Higher power output than GaAs at equivalent drive currents

OP161SL

Abstract: OP166 OP166A OP166B OP166C OP166D OP506
Contextual Info: < 0 OPTEK Product Bulletin OP166A June 1996 GaAs Plastic Infrared Emitting Diodes Types OP166A, OP166B, OP166C, OP166D * FOR IDENTIFICATION PURPOSES. ANODE LEAD IS .060 1.52 NOM LONGER THAN CATHODE LEAD. DIMENSIONS ARE IN INCHES (MILLIMETERS) Features Absolute Maximum Ratings (T a = 25° C unless otherwise noted)

A 69157 scr

Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Contextual Info: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info: OPA1662 OPA1664 Burr-Brown Audio SBOS489 – DECEMBER 2011 www.ti.com Low-Power, Low Noise and Distortion, Bipolar-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1662, OPA1664 FEATURES DESCRIPTION • Low Noise: 3.3 nV/√Hz at 1 kHz • Low Distortion: 0.00006% at 1 kHz

OPS06

Contextual Info: 0 . Q P IE K Product Bulletin O P 164A April 1993 GaAs Plastic Infrared Emitting Diodes T y p e s OP164A, OP164B, OP164C, OP164D • Narrow irradiance pattern • Mechanically and spectrally matched to the OP5Û6 series devices • Four power ranges • Small package size for limited space

Contextual Info: OP-166 FAST CURRENT FEEDBACK OPERATIONAL AMPLIFIER FEATURES GENERAL DESCRIPTION • Very Fast Slew R a te . 900V/ns Typ • Very High Bandwidth Av = + 1. 280MHz

pmi 0p07

Abstract: pmi OP77 OP-497 RADIATION pmi op05 pmi OPERATIONAL AMPLIFIERS op77 PMI OP AMP PMI OP07 Amplifier t thermocouple op177 PMI BUF03 low noise quad OP37
Contextual Info: OPERATIONAL AMPLIFIERS/BUFFERS PMI P n * is iiin M o n o lith ic - INTRODUCTION! • Precision High-Speed Improved JFET SINGLE OP-15/16/17 Low Vos, Fast OP-41 Low L, High Stability OP-42 High Speed OP-43 Low lB, Medium Speed OP-44 Very High Speed OP-111 Very Low L, Low Noise

Contextual Info: OPA1662 OPA1664 Burr-Brown Audio SBOS489 – DECEMBER 2011 www.ti.com Low-Power, Low Noise and Distortion, Bipolar-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1662, OPA1664 FEATURES DESCRIPTION • Low Noise: 3.3 nV/√Hz at 1 kHz • Low Distortion: 0.00006% at 1 kHz

OP1662

Contextual Info: OPA1662 OPA1664 Burr-Brown Audio SBOS489 – DECEMBER 2011 www.ti.com Low-Power, Low Noise and Distortion, Bipolar-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1662, OPA1664 FEATURES DESCRIPTION • Low Noise: 3.3 nV/√Hz at 1 kHz • Low Distortion: 0.00006% at 1 kHz

OP123

Abstract: OP124 OP140 OP165 OP166 OP169 OP223 OP265 OP266
Contextual Info: Converting Radiant Intensity in Units of mW/cm2 to mW/sr. Application Bulletin 222 Radiant intensity is commonly measured in units of power per steradian and power per area. The SI standard is power per steradian. Optek’s standard is power per area. Many customers will design their

OP1662

Abstract: OPA166X OP1664
Contextual Info: OPA1662 OPA1664 Burr-Brown Audio SBOS489 – DECEMBER 2011 www.ti.com Low-Power, Low Noise and Distortion, Bipolar-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1662, OPA1664 FEATURES DESCRIPTION • Low Noise: 3.3 nV/√Hz at 1 kHz • Low Distortion: 0.00006% at 1 kHz

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1