MPS3703 Search Results

MPS3702

Abstract: MPS3703 2N3702 2N3703
Contextual Info: MPS3702 silicon MPS3703 PNP SILICON ANNULAR TRANSISTOR PNP SILICON AMPLIFIER TRANSISTOR . designed fo r use in low -current, large-signal a m p lifier applications. • Device Sim ilar E lectrically to 2 N 3 7 0 2 , 2 N 3 7 0 3 M AXIM U M RATINGS R a tin g

MPS3703

Abstract: PN2907A
Contextual Info: S E M IC O N D U C T O R MPS3703 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Màximum RStinQS

CBVK741B019

Abstract: F63TNR MPS3703 PN2222N PN2907A
Contextual Info: MPS3703 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MPS3702

Abstract: MPS3702 motorola mps3703
Contextual Info: MOTORCLA SC XSTRS/R F ÎEE D I b3b?2S*4 DQÔtiO? T MPS3702 MPS3703 C A SE 29-04, STYLE 1 TO-92 TO-226AA M AXIM U M RATINGS Sym bol MPS3702 MPS3703 Unit VCEO 25 30 Vdo Collector-Base Voltage VCBO 40 50 Vdc Emitter-Base Voltage vebo Rating Coliector-Emitter Voltage

MPS44

Abstract: MPS4058 MPS3901
Contextual Info: DEVICE TYPE PACKAGE BVCEO BVCBO BVE80 ICBO @ VCB IV M IN VJ M IN ( V I M IN Im A I .M A X (V | HFE @ VC & 1C M IN -M A X (V I COB 1 - iA I MPS3702 MPS3703 MPS3704 MPS3705 MPS3706 PNP PNP NPN NPN NPN TO-92 TO -92 TO -92 TO -92 TO -92 (72) (72) (72) (72)

mps 06

Abstract: GES6220 MPS3702 MPS3703 MPS3704 MPS3705 MPS3706 MPS6512 MPS6514 MPS6516
Contextual Info: SILICON SIGNAL TRANSISTORS COMPLEMENTARY PAIRS TO-92 PACKAGE DEVICE NPN V Ml N.-MAX. MPSA55 MPS A 56 MPS3702 MPS3703 60 80 60 80 25 30 30 30 20 30 30 25 25 40 40 40 25 40 40 30 40 40 30 25 25 60 60 80 80 40 40 25 25 MPS A05 MPSA06 MPS3704 MPS3705 MPS3706

Contextual Info: SAMSUNG SEMICONDUCTOR INC MPS3703 14E 0 17*^4145 0 00 7314 3 | PNP EPITAXIAL SILICON TRANSISTOR T -2 9 -2 1 AMPLIFIER TRANSISTOR • C ollector-Em itter Voltage: Veto= 30V * C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

MPS3703

Abstract: PN2907A
Contextual Info: MPS3703 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MPS3702

Abstract: MPS3703
Contextual Info: I I N AMER PHILIPS/DI SCRETE 2SE D A • U JJ r bbS3n31'Ll UGQ17314 1 ■ '' MPS3702. MPS3703 SILICON PLANAR EPITAXIAL TRANSISTORS PNP silicon planar epitaxial transistors, each in a plastic TO-92 envelope. They are intended for use in amplifier applications.

584 TRANSISTOR

Abstract: MPS3702 MPS3703
Contextual Info: SAMSUNG S EMIC ONDUCT OR INC MPS3703 IME O 1 7^4145 0007314 3 | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V cso =30V * Collector Dissipation: P c m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

Contextual Info: S E M IC O N D U C T O R rivi MPS3703 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. AbSOlUtG Maximum RâtinÇjS

MPS3703

Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • bbS3T33.' 0017314 =1 ■ MPS3702. MPS3703 ;v T‘ ^ -2 1 SILICON PLANAR EPITAXIAL TRANSISTORS PNP silicon planar epitaxial transistors, each in a plastic TO-92 envelope. They are intended for use in amplifier applications.

TO92 30v 800ma

Abstract: 180NS
Contextual Info: MOE T> " imiiirr i i V- n‘ T flS flW QQ032fil 3 BERHM ~~ ~F27-0 • P N P Transistors T O -92) General Purpose Small Signal Amplifiers Package BVceo (Fig. 1)' Min. TO-92 2N3702 (ECB) 40V MPS3702 (EBC) TO-92 2N3703 (ECB) 50V MPS3703 (EBC) TO-92 2N3058

Contextual Info: SEMICONDUCTOR MPS3703 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum RatinQS TA = 25°C unless otherwise noted

2N4355

Abstract: 2N5139 2N3644 2N4121 TN2904A NS4234 TIS91 2N3638A 50113g 2N4354 T-12
Contextual Info: NATL S E M IC O N D { D I S C R E T E ! ifi DE | This Material Copyrighted By Its Respective Manufacturer b S 0 1 1 3 0 0 0 3 S M M 3 7 f ” NATL S E M IC O N D NATL SEMICOND, s Tut Conditions CO CD 8 o £ 2 Q. CM CO CO o o O O o o 2fl D F | t S D 1 1 3 D

MPS8093

Abstract: mps404
Contextual Info: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE, 13 D • GS0M33Ô 00035^7 7 ■ ALGR 93D 03597 2 S E M I C O N D S / ICS T'Ql'Qb ' PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain ^CBO

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3

2N4123 pnp silicon

Abstract: 2N4401 520 GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50

2N3643

Abstract: 2N2222 2N3643 TO-105 2N2219/2N2222 bc140 high voltage npn to-92 BC727 2N2219 2N3300 2N3302
Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VqEO (Cont’d) (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) DEVK : e NO. Item Po arity NPN PNP hFE VCEO @ >C (VCER) (hfe) V rnA Min/Max Min VCE(sat) V @ lc

ZTX3705

Abstract: 945 MOTHERBOARD CIRCUIT diagram MPS3693 ZTX108 BCY59P MPS3704 MPS3705 MPS6532 VC30 ZTX238
Contextual Info: NPN GENERAL PURPOSE TABLE 1 - continued Type MPS3704\ ZTX3704 J MPS3705 \ ZTX3705 / MPS6532 ZTX303 BCY59P MPS3693 ZTX238 ZTX383 ZTX384 BC183P ZTX108 2N4123 MPS3706\ ZTX3706 / ZTX302 ZTX301 BCY58P BC548P MPS3709\ ZTX3709 / MPS3710\ ZTX3710 / MPS3711 \ ZTX3711 f

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

c546b

Abstract: c557b of bc 237 b C547B c558b BC 9014 ba W61C c 557b 082BC w61b
Contextual Info: NPN General Purpose Amplifiers & Switches Device No. [Mark] B C W65C [ED ] Case Style TO-236 49 V CEO (V) Min 32 B C X 58 TO-92 (97) 32 BSR14 [U8] TO-236 (49) 40 V CBO VCES* (V) Min 60 75 V EBO (V) Min 5 I CBO ICES* (nA) Max 20* @ VCB (V) 32 TO-236 (49)