P220E
Abstract: infineon smd package
Text: PTF180901E PTF180901F Thermally-Enhanced High Power RF LDMOS FETs 90 W, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF180901E and PTF180901F are thermally-enhanced, internallymatched 90-watt GOLDMOS FETs intended for EDGE applications in the DCS/PCS bands. Thermally-enhanced packaging provides the coolest
|
Original
|
PDF
|
PTF180901E
PTF180901F
90-watt
P220E
infineon smd package
|
PTF180101S
Abstract: PTF180901E PTF180901F
Text: Product Brief PTF180901 GSM/EDGE RF Power FET The PTF180901 Performance One of our new line of GSM/EDGE/CDMA2000 devices, the PTF180901 is optimized for the DCS and PCS bands. This device operates at 47% efficiency with 13.5 dB of gain and produces 115 W, P -1dB . This high-gain
|
Original
|
PDF
|
PTF180901
GSM/EDGE/CDMA2000
B134-H8296-X-0-7600
PTF180101S
PTF180901E
PTF180901F
|
smd TRANSISTOR 1702
Abstract: MARKING SMD TRANSISTOR DQ
Text: PTF180901 High Power RF LDMOS FET 90 W, 1805–1880 MHz, 1930–1990 MHz Description Features The PTF180901 is a 90 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS bands. Full gold metallization ensures excellent device lifetime and reliability.
|
Original
|
PDF
|
PTF180901
PTF180901
smd TRANSISTOR 1702
MARKING SMD TRANSISTOR DQ
|
Untitled
Abstract: No abstract text available
Text: PTF180901 High Power RF LDMOS FET 90 W, 1805–1880 MHz, 1930–1990 MHz Description Features The PTF180901 is a 90 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS bands. Full gold metallization ensures excellent device lifetime and reliability.
|
Original
|
PDF
|
PTF180901
PTF180901
|
