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    P220E Search Results

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    P220E Price and Stock

    Delta Electronics Inc 0402HP-220EHTS

    FIXED IND 22NH 800MA 160MOHM SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 0402HP-220EHTS Cut Tape 50,890 1
    • 1 $0.2
    • 10 $0.152
    • 100 $0.1185
    • 1000 $0.09197
    • 10000 $0.09197
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    0402HP-220EHTS Digi-Reel 50,890 1
    • 1 $0.2
    • 10 $0.152
    • 100 $0.1185
    • 1000 $0.09197
    • 10000 $0.09197
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    0402HP-220EHTS Reel 44,000 4,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.05938
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    Delta Electronics Inc 0402HP-220EJTS

    FIXED IND 22NH 800MA 160MOHM SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 0402HP-220EJTS Digi-Reel 4,930 1
    • 1 $0.2
    • 10 $0.152
    • 100 $0.1185
    • 1000 $0.09197
    • 10000 $0.09197
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    0402HP-220EJTS Cut Tape 4,930 1
    • 1 $0.2
    • 10 $0.152
    • 100 $0.1185
    • 1000 $0.09197
    • 10000 $0.09197
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    0402HP-220EJTS Reel 4,000 4,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.07303
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    Delta Electronics Inc 0402HP-220EKTS

    FIXED IND 22NH 800MA 160MOHM SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 0402HP-220EKTS Cut Tape 2,245 1
    • 1 $0.15
    • 10 $0.125
    • 100 $0.0885
    • 1000 $0.0607
    • 10000 $0.0607
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    0402HP-220EKTS Digi-Reel 2,245 1
    • 1 $0.15
    • 10 $0.125
    • 100 $0.0885
    • 1000 $0.0607
    • 10000 $0.0607
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    Infineon Technologies AG BGA7P220E6327XTSA1

    WIRELESS INFRASTRUCTURE PG-TSNP-
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BGA7P220E6327XTSA1 Reel 2,000 2,000
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    • 10000 $2.1885
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    BGA7P220E6327XTSA1 Cut Tape 2,000 1
    • 1 $5.28
    • 10 $4.068
    • 100 $3.2361
    • 1000 $2.68991
    • 10000 $2.68991
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    BGA7P220E6327XTSA1 Digi-Reel 2,000 1
    • 1 $5.28
    • 10 $4.068
    • 100 $3.2361
    • 1000 $2.68991
    • 10000 $2.68991
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    Avnet Americas BGA7P220E6327XTSA1 Reel 2,000 16 Weeks 2,000
    • 1 -
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    Mouser Electronics BGA7P220E6327XTSA1 1,993
    • 1 $5.27
    • 10 $3.68
    • 100 $3.22
    • 1000 $2.68
    • 10000 $2.18
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    Delta Electronics Inc 0402HP-220EGTS

    FIXED IND 22NH 800MA 160MOHM SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 0402HP-220EGTS Cut Tape 1,410 1
    • 1 $0.16
    • 10 $0.129
    • 100 $0.0964
    • 1000 $0.07
    • 10000 $0.07
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    0402HP-220EGTS Digi-Reel 1,410 1
    • 1 $0.16
    • 10 $0.129
    • 100 $0.0964
    • 1000 $0.07
    • 10000 $0.07
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    P220E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    resistor 220 ohm

    Abstract: capacitor siemens 4700 35 resistor 4700 ohm 200B G200 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM P220ECT-ND th 2167 20237 P220E
    Text: PTF 10065 30 Watts, 1.93–1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10065 is a 30–watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. It typically operates with 11 dB gain. Nitride surface passivation and full gold metallization


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    PDF P220ECT-ND 1-877-GOLDMOS 1522-PTF resistor 220 ohm capacitor siemens 4700 35 resistor 4700 ohm 200B G200 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM P220ECT-ND th 2167 20237 P220E

    smd transistor marking l6

    Abstract: TRANSISTOR SMD 2X K PCC103BCT marking us capacitor pf l1 smd marking f2 PTF180601 PTF180601C PTF180601E 32 z 45 SMD TRANSISTOR MARKING l4
    Text: PTF180601 LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz Description Features The PTF180601 is a 60 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. Full gold metallization ensures excellent device lifetime and reliability.


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    PDF PTF180601 PTF180601 smd transistor marking l6 TRANSISTOR SMD 2X K PCC103BCT marking us capacitor pf l1 smd marking f2 PTF180601C PTF180601E 32 z 45 SMD TRANSISTOR MARKING l4

    Transistor 4733

    Abstract: capacitor siemens 4700 35 BDS31314-6-452 CGS C14
    Text: PRE-RELEASE PTF 10134* 100 Watts, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 10134 is an internally matched common source N–channel enhancement–mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output. Nitride surface passivation and gold metallization ensure excellent device lifetime


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    PDF P4525-ND PC56106-ND P220ECT-ND LL2012-F2N7S BDS31314-6-452 35VDC 1-877-GOLDMOS 1301-PTF Transistor 4733 capacitor siemens 4700 35 BDS31314-6-452 CGS C14

    Untitled

    Abstract: No abstract text available
    Text: PTF 102098 LDMOS RF Power Field Effect Transistor 90 Watts, 1805–1880 MHz, 1930–1990 MHz Description The PTF 102098 is a 90–watt, internally matched GOLDMOS FET intended for EDGE applications in the DCS or PCS bands. This LDMOS device operates at 47% efficiency P–1dB and 14.5 dB linear gain. Full


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    PDF 1522-PTF

    smd TRANSISTOR 1702

    Abstract: No abstract text available
    Text: Preliminary PTF180901A High Power RF LDMOS Field Effect Transistor 90 W, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF180901A is a 90-watt, internally-matched GOLDMOS FET intended for EDGE applications in the DCS/PCS bands. Full gold metallization ensures excellent device lifetime and reliability.


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    PDF PTF180901A PTF180901A 90-watt, PTF180901A* smd TRANSISTOR 1702

    22W8

    Abstract: No abstract text available
    Text: PTF180601C LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz Description Features The PTF180601C is a 60–W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. Full gold metallization ensures excellent device lifetime and reliability.


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    PDF PTF180601C PTF180601C 22W8

    resistor 680 ohm

    Abstract: BS121-ND PCB301 J101-J104 PVC Pipe capacitor 476 10V PCS5106CT-ND 680 ohms resistor 5 watt datasheet 476 capacitor 2.2 k ohm resistor
    Text: Fiber Optic Probe Details Terry Fritz 8-17-1999 Rev. 4 VI Probe Theory The VI Probe consists of three main parts. There is a transducer that turns either high voltages or high currents into smaller signals. A transmitter that takes the small signal from the transducer and converts it into an analog light


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    PDF R301-R310 500mV R311-R320 R351-R354 R355-R358 resistor 680 ohm BS121-ND PCB301 J101-J104 PVC Pipe capacitor 476 10V PCS5106CT-ND 680 ohms resistor 5 watt datasheet 476 capacitor 2.2 k ohm resistor

    10048

    Abstract: PTF 10048 capacitor 102 P4525-ND
    Text: PTF 10048 30 Watts, 2.1–2.2 GHz, W-CDMA GOLDMOS Field Effect Transistor Description • • The PTF 10048 is an internally matched 30–watt GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It operates at 40% efficiency with 10.5 dB typical gain. Nitride surface passivation


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    PDF P4525-ND P220ECI 1-877-GOLDMOS 1522-PTF 10048 PTF 10048 capacitor 102 P4525-ND

    C2331

    Abstract: AN7871 c2003 100KX-ND C20-21 74ACT174 C3233 equivalent ELT25 SPT7870 SPT7871
    Text: AN7871 EVALUATION BOARD APPLICATION NOTE FEATURES APPLICATIONS • 10-Bit Resolution • Conversion Rate Up to 100 MSPS • Separate Sample and Capture Clocks • Adjustable Duty Cycle Clock Drivers • Latched and Buffered Outputs • TTL-Output Test Connector


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    PDF AN7871 10-Bit SPT7871 SPT7871 a-2040-02-01 1092EK-ND H143-ND C2003 EB7871 C2331 AN7871 c2003 100KX-ND C20-21 74ACT174 C3233 equivalent ELT25 SPT7870

    10134

    Abstract: capacitor siemens 4700 35 BDS31314-6-452 transistor t 2180
    Text: PTF 10134 100 Watts, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output and operates with 10 dB typical gain. Nitride surface


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    PDF 35VDC 1-877-GOLDMOS 1522-PTF 10134 capacitor siemens 4700 35 BDS31314-6-452 transistor t 2180

    K-CNM0406

    Abstract: db25 pin male H2 RESISTORS db25 pin Enplas socket ots-28 LMK325BJ106MN MAX1464 MAX1464EVKIT P220ECT GRM216R71H102K
    Text: 19-0582; Rev 0; 12/06 MAX1464 Evaluation Kit The MAX1464 evaluation kit EV kit is designed to evaluate the MAX1464 high-performance, low-power, low-noise multichannel sensor signal processor. The EV kit includes: an evaluation PCB, the EV board that contains


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    PDF MAX1464 MAX1464; MAX1464 K-CNM0406 db25 pin male H2 RESISTORS db25 pin Enplas socket ots-28 LMK325BJ106MN MAX1464EVKIT P220ECT GRM216R71H102K

    C2331

    Abstract: SMD resistors 1k ohm AN7871 c2003 74ACT174 74ACT74 ELT25 SPT7870 SPT7871 SPT9687
    Text: AN7871 EVALUATION BOARD APPLICATION NOTE FEATURES APPLICATIONS • 10-Bit Resolution • Conversion Rate Up to 100 MSPS • Separate Sample and Capture Clocks • Adjustable Duty Cycle Clock Drivers • Latched and Buffered Outputs • TTL-Output Test Connector


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    PDF AN7871 10-Bit SPT7871 SPT7871 C2331 SMD resistors 1k ohm AN7871 c2003 74ACT174 74ACT74 ELT25 SPT7870 SPT9687

    resistor 220 ohm

    Abstract: 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM capacitor siemens 4700 35 200B G200 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
    Text: PTF 10065 30 Watts, 1.93–1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10065 is a 30–watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. It typically operates with 11 dB gain. Nitride surface passivation and full gold metallization


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    PDF P220ECT-ND 1-877-GOLDMOS 1522-PTF resistor 220 ohm 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM capacitor siemens 4700 35 200B G200 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

    resistor 220 ohm

    Abstract: capacitor siemens 4700 35 P Ferrite Siemens 200B G200 transistor amplifier 3 ghz 10 watts 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM transistor c 380 30-WATT
    Text: PTF 10065 GOLDMOS Field Effect Transistor 30 Watts, 1.93–1.99 GHz Description The PTF 10065 is a 30–watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. It typically operates with 11 dB gain. Nitride surface passivation and full gold metallization


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    PDF P220ECT-ND 1-877-GOLDMOS 1522-PTF resistor 220 ohm capacitor siemens 4700 35 P Ferrite Siemens 200B G200 transistor amplifier 3 ghz 10 watts 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM transistor c 380 30-WATT

    P220E

    Abstract: infineon smd package
    Text: PTF180901E PTF180901F Thermally-Enhanced High Power RF LDMOS FETs 90 W, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF180901E and PTF180901F are thermally-enhanced, internallymatched 90-watt GOLDMOS FETs intended for EDGE applications in the DCS/PCS bands. Thermally-enhanced packaging provides the coolest


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    PDF PTF180901E PTF180901F 90-watt P220E infineon smd package

    BDS31314-6-452

    Abstract: Transistor 4733
    Text: PTF 10134 100 Watts, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output and operates with 10 dB typical gain. Nitride surface


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    PDF 35VDC 1-877-GOLDMOS 1522-PTF BDS31314-6-452 Transistor 4733

    Untitled

    Abstract: No abstract text available
    Text: PTF180901 High Power RF LDMOS FET 90 W, 1805–1880 MHz, 1930–1990 MHz Description Features The PTF180901 is a 90 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS bands. Full gold metallization ensures excellent device lifetime and reliability.


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    PDF PTF180901 PTF180901

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY GOLDMOS Field Effect Transistor 90 Watt, DCS/PCS Band PTF 102098* Description Key Features The PTF 102098 is a 90–watt, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. This LDMOS device operates at 47% efficiency P-1dB and 14.5 dB linear gain. Full gold metallization


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    PDF PCD1287CT P220ECT 1-877-GOLDMOS 1522-PTF

    USB KEYBOARD CONTROLLER

    Abstract: EDGE22 5P20 WT65F1P42 PL50E LQFP48 S0280 WT65F1
    Text: • ■ ■ ■ ■ « ■ ■ l e■ ■h ■ r Ite ■ n ■ d■ ■ [Il ■ WT65F1 USB Keyboard Controller WT65F1 USB Keyboard Controller Flash Memory Type REV. 1.12 14 June, 2002 Weltrend Semiconductor, Inc. All Rights Reserved. Version 1.10 25-May-200


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    PDF WT65F1 WT65F1 25-May-200 25-May-200 USB KEYBOARD CONTROLLER EDGE22 5P20 WT65F1P42 PL50E LQFP48 S0280

    P340E

    Abstract: P220E USB KEYBOARD CONTROLLER P030E EDGE22 PL50E WT6510 P000E P200E P300E
    Text: • ■ ■ ■ ■ « ■ ■ l e■ ■h ■ r Ite ■ n ■ d■ ■ [Il ■ WT6510 USB Keyboard Controller WT6510 USB Keyboard Controller Mask ROM Type REV. 1.12 14 June, 2002 Weltrend Semiconductor, Inc. All Rights Reserved. Version 1.12 14-June-2002


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    PDF WT6510 WT6510 14-June-2002 P340E P220E USB KEYBOARD CONTROLLER P030E EDGE22 PL50E P000E P200E P300E

    sta 750

    Abstract: No abstract text available
    Text: PMÏ O P-220 DUAL MICROPOWER OPERATIONAL AMPLIFIER SINGLE OR DUAL SUPPLY) P r e c i s i o n M o n o l i t h i c s In c . ORDERING INFORMATION f FEATU R ES • • • • • • • • • • E xce lle n t TC V qs M a tc h . 2 /x V /°C M a x


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    PDF P-220 150juV 100/uA 000V/m 120dB OP-22Q OP-22 sta 750