PTF180901E Search Results

PTF180901E Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
PTF180901E		Infineon Technologies	GSM/EDGE RF Power FET		Original	PDF

PTF180901E Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
P220E Abstract: infineon smd package Text: PTF180901E PTF180901F Thermally-Enhanced High Power RF LDMOS FETs 90 W, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF180901E and PTF180901F are thermally-enhanced, internallymatched 90-watt GOLDMOS FETs intended for EDGE applications in the DCS/PCS bands. Thermally-enhanced packaging provides the coolest	Original	PDF	PTF180901E PTF180901F 90-watt P220E infineon smd package
PTF180101S Abstract: PTF180901E PTF180901F Text: Product Brief PTF180901 GSM/EDGE RF Power FET The PTF180901 Performance One of our new line of GSM/EDGE/CDMA2000 devices, the PTF180901 is optimized for the DCS and PCS bands. This device operates at 47% efficiency with 13.5 dB of gain and produces 115 W, P -1dB . This high-gain	Original	PDF	PTF180901 GSM/EDGE/CDMA2000 B134-H8296-X-0-7600 PTF180101S PTF180901E PTF180901F
smd TRANSISTOR 1702 Abstract: MARKING SMD TRANSISTOR DQ Text: PTF180901 High Power RF LDMOS FET 90 W, 1805–1880 MHz, 1930–1990 MHz Description Features The PTF180901 is a 90 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS bands. Full gold metallization ensures excellent device lifetime and reliability.	Original	PDF	PTF180901 PTF180901 smd TRANSISTOR 1702 MARKING SMD TRANSISTOR DQ
Untitled Abstract: No abstract text available Text: PTF180901 High Power RF LDMOS FET 90 W, 1805–1880 MHz, 1930–1990 MHz Description Features The PTF180901 is a 90 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS bands. Full gold metallization ensures excellent device lifetime and reliability.	Original	PDF	PTF180901 PTF180901