RF3934 Search Results

Contextual Info: RF3934 Proposed GaN WIDE-BAND POWER AMPLIFIER RoHS Compliant and Pb-Free Product Package Style: Flanged Ceramic Features „ „ „ „ „ Peak Power=120W Gain=14dB Advanced GaN HEMT Technology 48V Operation Optimized Evaluation Board Layout for 50Ω Operation

Contextual Info: RF3934D RF3934D 120W GaN on SiC Power Amplifier Die 120W GaN ON SIC POWER AMPLIFIER DIE Package: Die RF OUT VD Features  Broadband Operation DC-4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain=13dB at 2GHz  48V Typical Packaged Performance

Contextual Info: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical

GRM55ER72A475KA01L

Abstract: RF3934 DS111005 GRM32NR72A104KA01L ATC800A330JT RF3934PCBA-410 140W ERJ8GEYJ100V GaN ADS
Contextual Info: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic Features         Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=13dB at 2GHz 48V Operation Typical Performance

Contextual Info: RF3934 RF3934 120W GaN Wideband Power Amplifier The RF3934 is a 48V 120W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier

GaN amplifier

Abstract: RF3934 Gan transistor GaN amplifier 120W mobile rf power amplifier transistor GaN BJT DSB070530 Hemt transistor
Contextual Info: RF3934 Proposed GaN WIDE-BAND POWER AMPLIFIER RoHS Compliant and Pb-Free Product Package Style: Flanged Ceramic Features „ „ „ „ „ Peak Power=120W Gain=14dB Advanced GaN HEMT Technology 48V Operation Optimized Evaluation Board Layout for 50Ω Operation

Contextual Info: RF3934D 120W GaN on SiC Power Amplifier Die RF3934D Package: Die Features The RF3934D is a 48V, 120W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/ medical and general

bifet amplifier discrete schematic

Abstract: ERJ8GEYJ100V thermocouple gaas
Contextual Info: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic Features         Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=13dB at 2GHz 48V Operation Typical Performance

Contextual Info: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical

Contextual Info: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical

GaN ADS

Contextual Info: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic Features „ „ „ „ „ „ „ „ Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=13dB at 2GHz 48V Operation Typical Performance

RF3934D

Abstract: GaN amplifier 120W SiC BJT RFMD HEMT GaN SiC 120w power Operational amplifier 10A
Contextual Info: RF3934D 120W GaN on SiC POWER AMPLIFIER DIE RF3934D Proposed 120W GaN ON SiC POWER AMPLIFIER DIE Package: Die RF OUT VD Features  Broadband Operation DC-4GHz  Advanced GaN HEMT Technology   Packaged Small Signal Gain=13dB at 2GHz 48V Typical Packaged

Contextual Info: RF3934D RF3934D 120W GaN on SiC Power Amplifier Die 120W GaN ON SIC POWER AMPLIFIER DIE Package: Die RF OUT VD Features  Broadband Operation DC-4GHz  Advanced GaN HEMT Technology   RF IN VG Packaged Small Signal Gain=13dB at 2GHz 48V Typical Packaged

GRM32NR72A104KA01L

Abstract: GaN ADS GaN amplifier 120W RF3934 GRM55ER72A475KA01L ATC800A330JT ATC800A ERJ8GEYJ100V
Contextual Info: RF3934 120W GaN WIDE-BAND POWER AMPLIFIER Package: Flanged Ceramic, 2-pin Features         Broadband Operation DC to 3GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=13dB at 2GHz 48V Operation Typical

GaN TRANSISTOR

Abstract: RF3932 rf3931 RF3934 RF3933 RF393x transistor hemt
Contextual Info: RFMD . Gallium Nitride High Power Transistors Introducing the development of RFMD’s GaN unmatched power transistor UPT family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5 µm GaN high electron mobility transistor (HEMT) semiconductor

Gan hemt transistor RFMD

Abstract: RF3932 HIGH POWER TRANSISTOR RF393x Gan transistor rf3931 RF3930 GaN amplifier RF3933 RF3934
Contextual Info: RFMD. Gallium Nitride GaN High Power Transistors (Advance Notification) Introducing the development of RFMD’s unmatched high power transistor (HPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5um GaN high electron

UPC8236

Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Contextual Info: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

Gan hemt transistor RFMD

Abstract: RF393x transistor hemt RF3930 HIGH POWER TRANSISTOR rf gan amplifier GaN amplifier 120W silicon carbide power transistor gaas RF3933
Contextual Info: GaN Technology Update Technical Update RFMD RFMD® GaN High-Power Transistors Gallium Nitride GaN High Power Transistors Features: • High power density of up to 5W/mm • Advanced 0.5 m GaN HEMT process • 50V bias operation • High gain > 14 dB @ 2.1GHz

GaN ADS

Abstract: GaN amplifier 120W transistor hemt RF393x
Contextual Info: RFMD. High Power GaN Unmatched Power Transistors UPT Introducing the development of Our GaN unmatched power transistor (UPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5µm GaN high electron mobility transistor (HEMT) semiconductor process,

VCO-102

Abstract: NBB-502 spf-5189 RF5643wda cxe-2089
Contextual Info: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high

BA 7891 NG

Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
Contextual Info: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进

Integrated Synthesizers with Mixers

Abstract: Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers
Contextual Info: RFMD PRODUCT SELECTION GUIDE 2013-2014 Amplifiers Attenuators Modulators Switches Upconverters/Downconverters Voltage-Controlled Oscillators Synthesizers CATV Amplifiers and Tuners High Reliability Components Components for Cellular Applications Open Foundry Services

6 pin TRANSISTOR SMD CODE CAA

Abstract: TEA6721 BF991 spice model
Contextual Info: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、