GRM55ER72A475KA01L Search Results
GRM55ER72A475KA01L Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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GRM55ER72A475KA01L | muRata | Ceramic Capacitors, Capacitors, CAP CER 4.7UF 100V 10% X7R 2220 | Original | 1 |
GRM55ER72A475KA01L Price and Stock
Murata Manufacturing Co Ltd GRM55ER72A475KA01LCAP CER 4.7UF 100V X7R 2220 |
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GRM55ER72A475KA01L | Reel |
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GRM55ER72A475KA01L | 2,680 | 71 |
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GRM55ER72A475KA01L | 5,557 |
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GRM55ER72A475KA01L | 687 |
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GRM55ER72A475KA01L | Reel | 36,500 | 500 |
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GRM55ER72A475KA01L | 1,827 | 1 |
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GRM55ER72A475KA01L | 6,000 |
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GRM55ER72A475KA01L | 74 |
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GRM55ER72A475KA01L | 470 |
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GRM55ER72A475KA01L | Reel | 11 Weeks | 500 |
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GRM55ER72A475KA01L | 550 |
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GRM55ER72A475KA01L | 2,528 |
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Murata Manufacturing Co Ltd GRM55ER72A475KA01L.Cap, Mlcc, 4.7Uf, 100V, 2220; Capacitance:4.7Μf; Voltage(Dc):100V; Voltage(Ac):-; Capacitor Case/Package:2220 [5650 Metric]; Capacitance Tolerance:± 10%; Dielectric Characteristic:X7R; Product Range:Grm Series; Product Length:5.7Mmrohs Compliant: Yes |Murata GRM55ER72A475KA01L. |
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GRM55ER72A475KA01L. | Bulk | 10 |
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Others GRM55ER72A475KA01LCERAMIC CAPACITOR, MULTILAYER, CERAMIC, 100V, 10% +TOL, 10% -TOL, X7R, 15% TC, 4.7UF, SURFACE MOUNT, 2220 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GRM55ER72A475KA01L | 392 |
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Murata Manufacturing GRM55ER72A475KA01LCapacitors |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GRM55ER72A475KA01L | 16,995 |
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GRM55ER72A475KA01L Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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transistor 1800MHz
Abstract: r.f. amplifier 30mhz
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RF3826 30MHz 2500MHz, 2500MHz 2500MHz) transistor 1800MHz r.f. amplifier 30mhz | |
EI -40CContextual Info: RF3933 90W GaN WIDE-BAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Small Signal Gain = 21dB at 0.9GHz 48V Operation Typical |
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RF3933 DS120306 EI -40C | |
GRF31CR72A105KA01L
Abstract: grm43er61a476ke19l grm31cr60j226ke19l GRM31CR72E104KW03L GRM31CR71E475KA88L GRM31MR72A474KA35L GRM31CR60J476ME19L 3216 capacitor GRF32ER72A225KA11L X7R 1KV
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C44E1 GRF31CR72A105KA01L grm43er61a476ke19l grm31cr60j226ke19l GRM31CR72E104KW03L GRM31CR71E475KA88L GRM31MR72A474KA35L GRM31CR60J476ME19L 3216 capacitor GRF32ER72A225KA11L X7R 1KV | |
Contextual Info: RFG1M09180 RFG1M09180 700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced GaN HEMT Technology Typical Peak Modulated Power >240W Advanced Heat Sink Technology Single Circuit for 865MHz To |
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RFG1M09180 700MHZ 1000MHZ 1000MHZ RF400-2 865MHz 960MHz 47dBm | |
Contextual Info: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced GaN HEMT Technology Typical Peak Modulated Power >120W Advanced Heat-Sink Technology |
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RFG1M09090 700MHZ 1000MHZ RFG1M09090 RF400-2 865MHz 960MHz 44dBm | |
rf3826
Abstract: ERJ-3GEYJ821 ERJ-3GEYJ391 transistor 1800MHz
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RF3826 30MHz 2500MHz, RF3826 2500MHz 2500MHz) ERJ-3GEYJ821 ERJ-3GEYJ391 transistor 1800MHz | |
RFHA1000Contextual Info: RFHA1000 RFHA1000 50MHz to 1000MHz, 15W GaN Wideband Power Amplifier 50MHz TO 1000MHz, 15W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 15W Advanced Heat-Sink Technology |
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RFHA1000 50MHz 1000MHz, RFHA1000 1000MHz DS121114 | |
RFG1M20180
Abstract: ATC800B820JT
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RFG1M20180 RFG1M20180 RF400-2 -36dBc -55dBc DS120418 ATC800B820JT | |
Contextual Info: RFHA1042 RFHA1042 225MHz to 450MHz 125W GaN Power Amplifier 225MHz TO 450MHz 125W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin, RF400-2 Features Advanced GaN HEMT Technology Peak Power 125W Wideband Single Circuit for 225 - 450MHz 48V Modulated Typical |
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RFHA1042 225MHz 450MHz RFHA1042 RF400-2 -26dBc | |
RFG1M20180SB
Abstract: j35 fet RFG1M20180SQ
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RFG1M20180 RFG1M20180 RF400-2 -38dBc -55dBc DS120803 RFG1M20180SB j35 fet RFG1M20180SQ | |
Contextual Info: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz |
Original |
RF3931 900MHz EAR99 RF3931 DS120306 | |
Contextual Info: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical |
Original |
RF3934 RF3934 DS120306 | |
Contextual Info: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology |
Original |
RFHA1003 30MHz 512MHz, RFHA1003 512MHz DS120216 | |
404j
Abstract: rf3826 transistor 1800MHz 100A0R9BT150X
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RF3826 30MHz 2500MHz, RF3826 2500MHz 2500MHz) 404j transistor 1800MHz 100A0R9BT150X | |
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Contextual Info: RFG1M20180 RFG1M20180 1.8 GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advance GaN HEMT technology Typical peak modulated power>180W Advanced heat-sink technology Single circuit for 1.8GHz to |
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RFG1M20180 RFG1M20180 RF400-2 -36dBc -55dBc DS110406 | |
GRM55ER72A475KA01L
Abstract: RF3934 DS111005 GRM32NR72A104KA01L ATC800A330JT RF3934PCBA-410 140W ERJ8GEYJ100V GaN ADS
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RF3934 RF3934 DS111005 GRM55ER72A475KA01L DS111005 GRM32NR72A104KA01L ATC800A330JT RF3934PCBA-410 140W ERJ8GEYJ100V GaN ADS | |
Contextual Info: RFG1M20090 RFG1M20090 90W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20090 is optimized for commercial infrastructure, military communication, and general purpose amplifier applications in the 1.8GHz to 2.2GHz frequency band, ideal for constant envelope, pulsed |
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RFG1M20090 RFG1M20090 DS130823 | |
Contextual Info: RF3933 RF3933 90W GaN Wideband Power Amplifier The RF3933 is a 48V, 90W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier |
Original |
RF3933 RF3933 DS130905 | |
Contextual Info: RF3934 RF3934 120W GaN Wideband Power Amplifier The RF3934 is a 48V 120W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier |
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RF3934 RF3934 DS131206 | |
Contextual Info: RFG1M20180 RFG1M20180 180W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20180 is optimized for commercial infrastructure applications in the 1.8GHz to 2.2GHz frequency band, ideal for WCDMA and LTE applications. Using an advanced 48V high power density gallium nitride GaN semiconductor process optimized for high |
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RFG1M20180 RFG1M20180 DS130822 | |
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS | |
gcm155r71c104ka55d
Abstract: GCM32ER71E106KA57L GCM32 GCM1885C1H101JA16D nd 2981 GCM188R72A103KA37D GCM1885C1H102JA16D GCM188R71H102KA37D GCM155R71E473KA55D GCM188R71E474KA64D
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490-1919-1-ND 490-1920-1-ND 490-1921-1-ND 490-1922-1-ND 490-1923-1-ND 490-1924-1-ND 490-1925-1-ND 490-1919-2-ND 490-1920-2-ND 490-1921-2-ND gcm155r71c104ka55d GCM32ER71E106KA57L GCM32 GCM1885C1H101JA16D nd 2981 GCM188R72A103KA37D GCM1885C1H102JA16D GCM188R71H102KA37D GCM155R71E473KA55D GCM188R71E474KA64D | |
GRM155R71C103KA01D
Abstract: 0715k4l RC0603FR-074K99L LM25576MH RC0603FR-074K99 C5750X7R2A475M LM25576 LM5576 T520D227M010ASE025 TSSOP-20
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LM25576 LM25576 V-42V CSP-9-111S2) CSP-9-111S2. RD-128 GRM155R71C103KA01D 0715k4l RC0603FR-074K99L LM25576MH RC0603FR-074K99 C5750X7R2A475M LM5576 T520D227M010ASE025 TSSOP-20 | |
panasonic inverter dv 707 manual
Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
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